S7201
Abstract: D701 EEPROM cross NAND read disturb SST superflash picture of d701 TRansistor 701
Text: SuperFlash EEPROM Technology Technical Paper November 2001 SuperFlash EEPROM Technology INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The SuperFlash technology and memory cell have a number of important
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S72019-00-000
S7201
D701
EEPROM cross
NAND read disturb
SST superflash
picture of d701
TRansistor 701
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SST superflash
Abstract: "silicon storage technology" superflash S72013
Text: Practical Considerations for Minimizing Problems When Using Programmers and SST SuperFlash Memories Practical Considerations for Minimizing Problems When Using Programmers and SST SuperFlash Memories Application Note October 2001 INTRODUCTION AC Power Requirements
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S72013-02-000
SST superflash
"silicon storage technology" superflash
S72013
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3243B
Abstract: No abstract text available
Text: 32 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory SST34HF3223B / SST34HF3243B SST34HF3223B / SST24HF3243B32 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemories Preliminary Information FEATURES: • Flash Organization: Two 1M x16 • Quad-Bank Architecture for Concurrent
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SST34HF3223B
SST34HF3243B
SST24HF3243B32
Bl0x12-450mic-ILL
MO-210,
56-BALL
S71197-00-000
3243B
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Untitled
Abstract: No abstract text available
Text: 16 Mbit x16 Concurrent SuperFlash SST36VF1601D / SST36VF1602D SST36VF1601D / 1602D16Mb (x16) Concurrent SuperFlash Advance Information FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection
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SST36VF1601D
SST36VF1602D
1602D16Mb
SST36VF1601D:
SST36VF1602D:
MO-142
48-tsop-EK-8
48-LEAD
S71254-00-000
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TRC 561 a3 diagram
Abstract: S71214-00-000 555H SST34HF1681 S71214
Text: 16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory SST34HF1681 SST34HF16818 Mb Flash x16 Concurrent SuperFlash ComboMemory Advance Specifications FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent Read/Write Operation
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SST34HF1681
SST34HF16818
56ba-LFBGA-L1P-8x10-450mic-ILL
MO-210,
56-BALL
S71214-00-000
TRC 561 a3 diagram
555H
SST34HF1681
S71214
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28SF040
Abstract: SST28SF040 SST28SF040-4
Text: SST28SF040–4 Megabit SuperFlash EEPROM Command Interrupt Recovery Application Note 1.0 INTRODUCTION The SST 28SF040 SuperFlash EEPROM offers the ease of 5V-only reprogrammability along with the operational safety provided by the use of command registers.
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SST28SF040
28SF040
28SF040.
28SF040
SST28SF040-4
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Untitled
Abstract: No abstract text available
Text: 16 Mbit Concurrent SuperFlash SST36VF1601 SST36VF16012.7V 16Mb x16 Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit
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SST36VF1601
SST36VF16012
SST36VF1601:
48-tfbga-BK-8x10-300mic-13
MO-210,
48-BALL
S71142-06-000
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A20-A11
Abstract: No abstract text available
Text: 32 Mbit 2M x16 Concurrent SuperFlash SST36WF3203 Advance Information SST36WF32031.65V 32Mb (x16) Concurrent SuperFlash FEATURES: • Organized as 2M x16 • Dual Bank Architecture for Concurrent Read-While-Write Operation • Single 1.65-1.95V for Read-While-Write Operations
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SST36WF3203
SST36WF32031
48-tfbga-B3K-6x8-450mic-2
MO-210,
48-BALL
S71158-02-000
A20-A11
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28SF040
Abstract: SST28SF040-150-4I-EI Silicon Storage Technology "silicon storage technology" program erase read "silicon storage technology" superflash SST28SF040-150-3C-EI 2003C 28SF040-150 2003i
Text: Data Sheet SST 28SF040 5.0V-only 4 Megabit SuperFlash EEPROM July 1996 1996 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.
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28SF040
SeT28SF040-200-3C-
SST28SF040-150-4I-
SST28SF040-200-4I-
SST28SF040-150-3I-
28SF040
SST28SF040-150-4I-EI
Silicon Storage Technology
"silicon storage technology" program erase read
"silicon storage technology" superflash
SST28SF040-150-3C-EI
2003C
28SF040-150
2003i
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28vF040
Abstract: No abstract text available
Text: Preliminary Specifications SST 28VF040 2.7V-only 4 Megabit SuperFlash EEPROM June 1997 1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.
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28VF040
8VF040-300-3C-
SST28VF040-300-3C-
SST28VF040-250-3C-
SST28VF040-250-4I-
28vF040
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CR10
Abstract: No abstract text available
Text: SuperFlash EEPROM Technology Technical Paper 1.0 INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The
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SST36VF3203
Abstract: 555H BKX555H SST36VF3204 ba4932
Text: 32 Mbit x8/x16 Concurrent SuperFlash SST36VF3203 / SST36VF3204 SST36VF3201C / 1602C32Mb (x8/x16) Concurrent SuperFlash Advance Information FEATURES: • Organized as 2M x16 or 4M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – 32 Mbit Bottom Sector Protection
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x8/x16)
SST36VF3203
SST36VF3204
SST36VF3201C
1602C32Mb
SST36VF3203:
SST36VF3204:
S71270-01-000
555H
BKX555H
SST36VF3204
ba4932
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ci 555
Abstract: 555H SST36VF1601C SST36VF1602C
Text: 16 Mbit x8/x16 Concurrent SuperFlash SST36VF1601C / SST36VF1602C SST36VF1601C / 1602C16Mb (x8/x16) Concurrent SuperFlash Advance Information FEATURES: • Organized as 1M x16 or 2M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection
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x8/x16)
SST36VF1601C
SST36VF1602C
1602C16Mb
SST36VF1601C:
SST36VF1602C:
A19-A10
A19-A11
ci 555
555H
SST36VF1602C
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555H
Abstract: SST36VF1601E SST36VF1602E C0010
Text: 16 Mbit x8/x16 Concurrent SuperFlash SST36VF1601E / SST36VF1602E SST36VF1601E / 1602E16Mb (x8/x16) Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 or 2M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection
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x8/x16)
SST36VF1601E
SST36VF1602E
1602E16Mb
SST36VF1601E:
SST36VF1602E:
S71274-04-000
555H
SST36VF1602E
C0010
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SST28SF040
Abstract: SST28SF040-4
Text: SST28SF040–4 Megabit SuperFlash EEPROM Command Interrupt Recovery Application Note Revised March 1998 1.0 INTRODUCTION The SST28SF040 SuperFlash EEPROM offers the ease of 5V-only reprogrammability along with the operational safety provided by the use of command registers. The
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SST28SF040
SST28SF040.
SST28SF040-4
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555H
Abstract: SST36VF1601E SST36VF1602E
Text: 16 Mbit x8/x16 Concurrent SuperFlash SST36VF1601E / SST36VF1602E SST36VF1601E / 1602E16Mb (x8/x16) Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 or 2M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection
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x8/x16)
SST36VF1601E
SST36VF1602E
1602E16Mb
SST36VF1601E:
SST36VF1602E:
S71274-03-000
555H
SST36VF1602E
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F24-12
Abstract: No abstract text available
Text: 16 Mbit Concurrent SuperFlash SST36VF1601 SST36VF16012.7V 16Mb x16 Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit
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SST36VF1601
SST36VF16012
SST36VF1601:
48-tfbga-BK-8x10-300mic-13
MO-210,
48-BALL
S71142-07-000
F24-12
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28SF040
Abstract: 28SF040-150 120-3C
Text: Data Sheet SST 28SF040 5.0V-only 4 Megabit SuperFlash EEPROM June 1997 1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.
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28SF040
S40-150-3C-
SST28SF040-150-3C-
SST28SF040-200-3C-
SST28SF040-120-3C-
28SF040
28SF040-150
120-3C
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28LF040
Abstract: SST28LF040-250-4C-EI SST28LF040-200-3C-EI 28LF040-200
Text: Data Sheet SST 28LF040 3.0V-only 4 Megabit SuperFlash EEPROM July 1996 1996 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.
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28LF040
ST28LF040-250-3C-
SST28LF040-200-4I-
SST28LF040-250-4I-
SST28LF040-200-3I-
28LF040
SST28LF040-250-4C-EI
SST28LF040-200-3C-EI
28LF040-200
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flash "high temperature data retention" mechanism
Abstract: Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374
Text: SuperFlash Memory Program/Erase Endurance Viktor Markov, Xian Liu, Alexander Kotov, Amitay Levi, Tho Ngoc Dang, and Yuri Tkachev Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, E-mail: akotov@sst.com Abstract––Program/erase endurance data for SuperFlash
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32Kbit
flash "high temperature data retention" mechanism
Angstrem
Hebrew
material science and technology
1117 FG
0.18-um CMOS Flash technology
DSASW0037374
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Untitled
Abstract: No abstract text available
Text: 16 Mbit x16/x8 Concurrent SuperFlash Memory SST34HF1601B SST34HF1601B16Mb (x16/x8) Concurrent SuperFlash Memory Preliminary Specifications FEATURES: • Organized as 1M x16 or 2M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – Bank1: 12 Mbit (768K x16/1536K x8) Flash
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x16/x8)
SST34HF1601B
SST34HF1601B16Mb
x16/1536K
x16/512K
KWord/256
56-tfbga-B1P-8x10-450mic-0
MO-210,
56-BALL
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Untitled
Abstract: No abstract text available
Text: 16 Mbit Concurrent SuperFlash SST36VF1601 / SST36VF1602 SST36V160x16Mb x16 Concurrent SuperFlash Advance Information FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit
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SST36VF1601
SST36VF1602
SST36V160x16Mb
SST36VF1601:
SST36VF1602:
MO-210,
48-BALL
S71142-05-000
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f333
Abstract: SST36VF1601 2F312 F2311
Text: 16 Mbit Concurrent SuperFlash SST36VF1601 SST36V160116Mb x16 Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit
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SST36VF1601
SST36V160116Mb
SST36VF1601:
48ba-tfbga-BK-8x10-300mic-ILL
MO-210,
48-BALL
S71142-06-000
f333
SST36VF1601
2F312
F2311
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transistor c1c
Abstract: floating-gate injector CR10
Text: SuperFlash EEPROM Technology Technical Paper Revised March 1999 1.0 INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The
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