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    SUPERFLASH SILICON STORAGE TECHNOLOGY Search Results

    SUPERFLASH SILICON STORAGE TECHNOLOGY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    SUPERFLASH SILICON STORAGE TECHNOLOGY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    28SF040

    Abstract: SST28SF040-150-4I-EI Silicon Storage Technology "silicon storage technology" program erase read "silicon storage technology" superflash SST28SF040-150-3C-EI 2003C 28SF040-150 2003i
    Text: Data Sheet SST 28SF040 5.0V-only 4 Megabit SuperFlash EEPROM July 1996 1996 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 28SF040 SeT28SF040-200-3C- SST28SF040-150-4I- SST28SF040-200-4I- SST28SF040-150-3I- 28SF040 SST28SF040-150-4I-EI Silicon Storage Technology "silicon storage technology" program erase read "silicon storage technology" superflash SST28SF040-150-3C-EI 2003C 28SF040-150 2003i

    28vF040

    Abstract: No abstract text available
    Text: Preliminary Specifications SST 28VF040 2.7V-only 4 Megabit SuperFlash EEPROM June 1997 1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 28VF040 8VF040-300-3C- SST28VF040-300-3C- SST28VF040-250-3C- SST28VF040-250-4I- 28vF040

    28SF040

    Abstract: 28SF040-150 120-3C
    Text: Data Sheet SST 28SF040 5.0V-only 4 Megabit SuperFlash EEPROM June 1997 1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 28SF040 S40-150-3C- SST28SF040-150-3C- SST28SF040-200-3C- SST28SF040-120-3C- 28SF040 28SF040-150 120-3C

    28LF040

    Abstract: SST28LF040-250-4C-EI SST28LF040-200-3C-EI 28LF040-200
    Text: Data Sheet SST 28LF040 3.0V-only 4 Megabit SuperFlash EEPROM July 1996 1996 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 28LF040 ST28LF040-250-3C- SST28LF040-200-4I- SST28LF040-250-4I- SST28LF040-200-3I- 28LF040 SST28LF040-250-4C-EI SST28LF040-200-3C-EI 28LF040-200

    28LF040

    Abstract: No abstract text available
    Text: Data Sheet SST 28LF040 3.0V-only 4 Megabit SuperFlash EEPROM June 1997 1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 28LF040 S8LF040-250-3C- SST28LF040-250-3C- SST28LF040-200-3C- SST28LF040-200-4I- 28LF040

    S7201

    Abstract: D701 EEPROM cross NAND read disturb SST superflash picture of d701 TRansistor 701
    Text: SuperFlash EEPROM Technology Technical Paper November 2001 SuperFlash EEPROM Technology INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The SuperFlash technology and memory cell have a number of important


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    PDF S72019-00-000 S7201 D701 EEPROM cross NAND read disturb SST superflash picture of d701 TRansistor 701

    atmel AT89C52 PROGRAMMER

    Abstract: MCS-48 PLCC-44 SST89C54 SST89C58 SST89C59 mcs-48 users manual MCS48 instruction set interrupts in embedded system at89c52 18H-1FH
    Text: 1 2 3 4 5 6 FlashFlex51 MCU SST89C54 / SST89C58 / SST89C59 Multi-Purpose 8051 Compatible Microcontroller Unit with Embedded SuperFlash Memory for Flexibility 7 8 9 10 11 12 13 User’s Manual Preliminary 14 15 16 1998 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. FlashFlex51 is a trademark of Silicon Storage Technology, Inc.


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    PDF FlashFlex51 SST89C54 SST89C58 SST89C59 atmel AT89C52 PROGRAMMER MCS-48 PLCC-44 SST89C59 mcs-48 users manual MCS48 instruction set interrupts in embedded system at89c52 18H-1FH

    CR10

    Abstract: No abstract text available
    Text: SuperFlash EEPROM Technology Technical Paper 1.0 INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The


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    transistor c1c

    Abstract: floating-gate injector CR10
    Text: SuperFlash EEPROM Technology Technical Paper Revised March 1999 1.0 INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The


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    flash "high temperature data retention" mechanism

    Abstract: Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374
    Text: SuperFlash Memory Program/Erase Endurance Viktor Markov, Xian Liu, Alexander Kotov, Amitay Levi, Tho Ngoc Dang, and Yuri Tkachev Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, E-mail: akotov@sst.com Abstract––Program/erase endurance data for SuperFlash


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    PDF 32Kbit flash "high temperature data retention" mechanism Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374

    SST89F54-33-C-PI

    Abstract: mcs-48 users manual intel 83c154 INSTRUCTION SET atmel 8055 LEAPER-10 MCS-48 atmel AT89C52 PROGRAMMER 9221 st AT89C52 INSTRUCTION SET icemaster-pe
    Text: 1 2 3 4 5 6 FlashFlex51 MCU SST89F54 / SST89F58 8051 Compatible Multi-Purpose 8-bit Microcontroller Unit with Embedded SuperFlash Memory for Flexibility 7 8 9 10 11 12 13 User’s Manual Preliminary 14 15 16 1999 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. FlashFlex51, In-Application


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    PDF FlashFlex51 SST89F54 SST89F58 FlashFlex51, KitCON-FlashFlex51 D-55129 SST89F54-33-C-PI mcs-48 users manual intel 83c154 INSTRUCTION SET atmel 8055 LEAPER-10 MCS-48 atmel AT89C52 PROGRAMMER 9221 st AT89C52 INSTRUCTION SET icemaster-pe

    SST12CP11-QVCE

    Abstract: SST85LD1004T-60-RI-LCTE SST12CP11 SST85LD1002U-60-RI-LBTE SST25VF032B-80-4I-S2AF SST12LP08-QX6E SST85LD1001T-60-RI-LBTE tsmc embflash SST25VF064C-80-4I-S3AE SST25VF064C-80-4I-Q2AE
    Text: Think Beyond Flash. Think SuperFlash Product Selection Guide Silicon Storage Technology, Inc. www.SST.com Parallel Flash MemorY Silicon Storage Technology, Inc. 512 Kbit Ordering Number Description Spd. ns Voltage (V) Pin Count Packages SST27SF512-70-3C-NHE


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    PDF SST27SF512-70-3C-NHE SST29EE512-70-4C-EHE SST29EE512-70-4C-NHE SST29EE512-70-4I-NHE SST39VF512-70-4C-NHE SST39VF512-70-4C-WHE SST12CP11-QVCE SST85LD1004T-60-RI-LCTE SST12CP11 SST85LD1002U-60-RI-LBTE SST25VF032B-80-4I-S2AF SST12LP08-QX6E SST85LD1001T-60-RI-LBTE tsmc embflash SST25VF064C-80-4I-S3AE SST25VF064C-80-4I-Q2AE

    tunnel diodes

    Abstract: 1E-18 injector tunnel detector ed 39
    Text: Tunneling Phenomenon in SuperFlashâ Cell A.Kotov, A.Levi, Yu.Tkachev, and V.Markov Silicon Storage Technology Inc., 1171 Sonora Court, Sunnyvale, CA 94086, Tel. 408 522-7350, akotov@sst.com Abstract––An extensive investigation of interpoly oxide conduction (erase) mechanism for SuperFlash cell is


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    29LE512

    Abstract: A114 A115 SST29LE512 SST29LE512-150-4C-NH
    Text: Data Sheet SST 29LE512 3.0V-only 512 Kilobit Page Mode EEPROM June 1997 1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 29LE512 Byte-writeT29LE512-150-4I-EH SST29LE512-200-4I-EH SST29LE512-150-4I-NH SST29LE512-200-4I-NH SST29LE512-200-3C-U1 SST29LE512-200-4C-U1 29LE512 A114 A115 SST29LE512 SST29LE512-150-4C-NH

    29ee512

    Abstract: 29ee512-70 SST 29EE512 A114 A115 SST29EE512
    Text: Data Sheet SST 29EE512 5.0V-only 512 Kilobit Page Mode EEPROM June 1997 1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 29EE512 29EE512- 90-4I-EH SST29EE512-120-4I-EH SST29EE512- 90-4I-NH SST29EE512-120-4I-NH SST29EE512-120-3C-U1 SST29EE512-120-4C-U1 29ee512 29ee512-70 SST 29EE512 A114 A115 SST29EE512

    29le010

    Abstract: A114 A115 SST29LE010
    Text: Data Sheet SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM June 1997 1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 29LE010 CyclT29LE010-150-4I-EH SST29LE010-200-4I-EH SST29LE010-150-4I-NH SST29LE010-200-4I-NH SST29LE010-200-3C-U1 SST29LE010-200-4C-U1 29le010 A114 A115 SST29LE010

    512 eeprom dip 32-pin

    Abstract: 512 eeprom dip A114 SST29VE512
    Text: Data Sheet SST 29VE512 2.7V-only 512 Kilobit Page Mode EEPROM July 1996 1996 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 29VE512 SST29VE512-250-3C- SST29VE512-200-3C- SST29VE512-200-4I-EH SST29VE512-250-4I-EH SST29VE512-200-4I-NH SST29VE512-250-4I-NH SST29VE512-250-4I-U1 512 eeprom dip 32-pin 512 eeprom dip A114 SST29VE512

    29EE010

    Abstract: 29EE010-150 29EE010-120 SST29EE010-(90/120)-4C-PH SST29EE010 29EE010-90 A114 SST29EE010-120-3C-PH low cost eeprom programmer circuit diagram SST29EE010-150-3C-PH
    Text: Data Sheet SST 29EE010 5.0V-only 1 Megabit Page Mode EEPROM July 1996 1996 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 29EE010 CyclE010- 90-4I-EH SST29EE010-120-4I-EH SST29EE010-150-4I-EH SST29EE010- 90-4I-NH SST29EE010-120-4I-NH SST29EE010-150-4I-NH 29EE010 29EE010-150 29EE010-120 SST29EE010-(90/120)-4C-PH SST29EE010 29EE010-90 A114 SST29EE010-120-3C-PH low cost eeprom programmer circuit diagram SST29EE010-150-3C-PH

    29ee020

    Abstract: 29EE020-120 29ee020-150 A114 SST29EE020 PH ON 823
    Text: Data Sheet SST 29EE020 5.0V-only 2 Megabit Page Mode EEPROM July 1996 1996 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 29EE020 SST29EE020-150-3C- SST29EE020-120-3C- SST29EE020-120-4I-EH SST29EE020-150-4I-EH SST29EE020-120-4I-NH SST29EE020-150-4I-NH SST29EE020-150-4C-U1 29ee020 29EE020-120 29ee020-150 A114 SST29EE020 PH ON 823

    A114

    Abstract: SST29VE010 29VE010 SST29VE010-200-3C-EH
    Text: Data Sheet SST 29VE010 2.7V-only 1 Megabit Page Mode EEPROM July 1996 1996 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 29VE010 SST29VE010-250-3C- SST29VE010-200-3C- SST29VE010-200-4I-EH SST29VE010-250-4I-EH SST29VE010-200-4I-NH SST29VE010-250-4I-NH SST29VE010-250-4C-U1 A114 SST29VE010 29VE010 SST29VE010-200-3C-EH

    29LE020

    Abstract: A114 SST29LE020
    Text: Preliminary Specifications SST 29LE020 3.0V-only 2 Megabit Page Mode EEPROM July 1996 1996 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 29LE020 SST29LE020-200-4C- SST29LE020-250-4C- SST29LE020-200-4I-EH SST29LE020-250-4I-EH 29LE020 A114 SST29LE020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet SST 28PC040 5.0V-only 4 Megabit PCMCIA Interface EEPROM June 1997 1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 28PC040 SST28PC040-250-5C-WI-S00A SST28PC040-150-5C-WI-S00A SST28PC040-250-5C-WI-S01B SST28PC040-150-5C-WI-S01B SST28PC040-250-5C-WI-S10C SST28PC040-150-5C-WI-S10C SST28PC040-250-5C-WI-S11D SST28PC040-150-5C-WI-S11D

    S11D

    Abstract: No abstract text available
    Text: Preliminary Specifications SST 28LP040 3.0V-only 4 Megabit PCMCIA Interface EEPROM June 1997 1997 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 28LP040 S11D

    29le010-150

    Abstract: 29LE010 A114 SST29LE010 SST 29LE010
    Text: Data Sheet SST 29LE010 3.0V-only 1 Megabit Page Mode EEPROM July 1996 1996 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. This specification is subject to change without notice.


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    PDF 29LE010 SST29LE010-200-3C- SST29LE010-150-3C- SST29LE010-150-4I-EH SST29LE010-200-4I-EH SST29LE010-150-4I-NH SST29LE010-200-4I-NH SST29LE010-200-4C-U1 29le010-150 29LE010 A114 SST29LE010 SST 29LE010