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    SUPER MATCHED BIPOLAR TRANSISTOR PAIR Search Results

    SUPER MATCHED BIPOLAR TRANSISTOR PAIR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    SUPER MATCHED BIPOLAR TRANSISTOR PAIR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAT03

    Abstract: DAC08 MAT03E MAT03EH MAT03F MAT03FH OP27 MAT03-SPECIFICATIONS Microphone Pre-Amplifier
    Text: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V Max Low Noise: 1 nV/√Hz @ 1 kHz Max High Gain: 100 Min High Gain Bandwidth: 190 MHz Typ Tight Gain Matching: 3% Max Excellent Logarithmic Conformance: r BE Ӎ 0.3 ⍀ typ GENERAL DESCRIPTION


    Original     		PDF MAT03 C00284-0-2/02 DAC08 MAT03E MAT03EH MAT03F MAT03FH OP27 MAT03-SPECIFICATIONS Microphone Pre-Amplifier

    National "Audio Handbook"

    Abstract: PF5102 Lm194 high accuracy riaa riaa preamp analog devices balanced riaa AN-222 lm114 operational amplifier discrete schematic phono preamp
    Text: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool, yet have received less and less attention over the last few years. This is primarily due to the proliferation of high-performance monolithic circuits which are replacing


    Original     		PDF tran4466 AN-222 National "Audio Handbook" PF5102 Lm194 high accuracy riaa riaa preamp analog devices balanced riaa AN-222 lm114 operational amplifier discrete schematic phono preamp

    National "Audio Handbook"

    Abstract: PF5102 2N4250 strain gauge amplifier National LM194 LM394 AN-222 LM118 Cold-Junction
    Text: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool, yet have received less and less attention over the last few years. This is primarily due to the proliferation of high-performance monolithic circuits which are replacing


    Original     		PDF LM194 absolute959 National "Audio Handbook" PF5102 2N4250 strain gauge amplifier National LM394 AN-222 LM118 Cold-Junction

    MAT03 op

    Abstract: PMD CAPACITOR MAT03 MAT03EH Super matched pair current mirror cascode dual matched PNP Dual Transistors TO-78 mat03ah2 MAT03A
    Text: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form


    Original     		PDF MAT03 MAT03 MAT03 op PMD CAPACITOR MAT03EH Super matched pair current mirror cascode dual matched PNP Dual Transistors TO-78 mat03ah2 MAT03A

    C3129

    Abstract: MAT03EH MAT03 MAT03A MAT03AH2 MAT03E MAT03F MAT03FH transistor low noise preamp microphone SILICON SMALL-SIGNAL DICE
    Text: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form


    Original     		PDF MAT03 MAT03 C3129 MAT03EH MAT03A MAT03AH2 MAT03E MAT03F MAT03FH transistor low noise preamp microphone SILICON SMALL-SIGNAL DICE

    current mirrors wilson

    Abstract: microphone preamplifier super match pair SILICON SMALL-SIGNAL DICE cascode preamplifier cascode miller capacitance MAT03AH2 model dac08
    Text: BACK a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form


    Original     		PDF MAT03 MAT03 current mirrors wilson microphone preamplifier super match pair SILICON SMALL-SIGNAL DICE cascode preamplifier cascode miller capacitance MAT03AH2 model dac08

    MAT03 op

    Abstract: cascode miller capacitance low noise Microphone Preamplifier
    Text: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form


    Original     		PDF MAT03 MAT03 MAT03AH MAT03AH/883C MAT03EH MAT03FH MAT03GBC /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000831\08302000. MAT03 op cascode miller capacitance low noise Microphone Preamplifier

    PF5102 equivalent

    Abstract: National "Audio Handbook" LM194 lm114 National AN-222 C1995 LM114/PF5102 equivalent LM118 PF5102
    Text: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool yet have received less and less attention over the last few years This is primarily due to the proliferation of highperformance monolithic circuits which are replacing many


    Original     		PDF

    lm394

    Abstract: LM194 LM394H LM394CH supermatch pair Vishay Ultronix Grand Junction CO Q81 LM194 NPN Monolithic Transistor Pair Super matched pair smd transistor marking TL LM394 Spice
    Text: LM194 LM394 Supermatch Pair General Description The LM194 and LM394 are junction isolated ultra wellmatched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional transistor pairs This was accomplished by advanced linear processing and a unique new device structure


    Original     		PDF LM194 LM394 AN-222: LB-21: 24-Feb- 28-Jun- LM394H LM394CH supermatch pair Vishay Ultronix Grand Junction CO Q81 LM194 NPN Monolithic Transistor Pair Super matched pair smd transistor marking TL LM394 Spice

    LM194 NPN Monolithic Transistor Pair

    Abstract: LM394CH LM194 accurate logging amplifier TRANSISTOR REPLACEMENT GUIDE supermatch pair LM194H
    Text: LM194 LM394 Supermatch Pair General Description The LM194 and LM394 are junction isolated ultra wellmatched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional transistor pairs This was accomplished by advanced linear processing and a unique new device structure


    Original     		PDF LM194 LM394 operatiN-222: 24-Feb-99 28-Jun-96 LB-21: LM194 NPN Monolithic Transistor Pair LM394CH accurate logging amplifier TRANSISTOR REPLACEMENT GUIDE supermatch pair LM194H

    LB-52

    Abstract: "Matched Bipolar Transistor Pair" AN-222 semiconductor LINEAR AN222 Nelson Carl T
    Text: National Semiconductor Linear Brief 52 Robert A. Pease December 1980 It is well known that the voltage noise of an operational amplifier can be decreased by increasing the emitter current of the input stage. The signal-to-noise ratio will be improved by the increase of bias, until the base current noise begins to


    Original     		PDF LB-52 LB-52 "Matched Bipolar Transistor Pair" AN-222 semiconductor LINEAR AN222 Nelson Carl T

    power BJT 1000 volt vce

    Abstract: Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		PDF OT223 150mA FZT560 27-Jun-2011 power BJT 1000 volt vce Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT

    LM709 equivalent

    Abstract: Widlar pins 2N2920 alcohol sensor abstract national semiconductor application note 29 IC OP AMP for Piezoelectric transducers 2N2920 logarithmic applications LM102A op amp transistor current booster circuit LM709
    Text: National Semiconductor Application Note 29 Robert J. Widlar September 2002 Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. mance is often limited by leakages in capacitors, diodes, analog switches or printed circuit boards, rather than by the


    Original     		PDF 2N2920 2N3728 LM394 LM709 equivalent Widlar pins 2N2920 alcohol sensor abstract national semiconductor application note 29 IC OP AMP for Piezoelectric transducers 2N2920 logarithmic applications LM102A op amp transistor current booster circuit LM709

    1000X

    Abstract: AN-222 C1995 LB-52
    Text: National Semiconductor Linear Brief 52 Robert A Pease December 1980 It is well known that the voltage noise of an operational amplifier can be decreased by increasing the emitter current of the input stage The signal-to-noise ratio will be improved by the increase of bias until the base current noise begins


    Original     		PDF 1000X 1000X AN-222 C1995 LB-52

    ir 4427 cross reference

    Abstract: DDFA free of IR sensors free download datasheet of IR sensors 6A10 Diodes Inc avalanche transistors DIODES 6A10 equivalent 6A4 zener 6a1 6A4-T
    Text: 6A05 - 6A10 6.0A SILICON RECTIFIER Features • • • High Surge Current Capability Low Leakage and Forward Voltage Drop Lead Free Finish, RoHS Compliant Note 1 Mechanical Data • • • • • • • Case: R-6 Case Material: Molded Plastic. UL Flammability


    Original     		PDF J-STD-020C MILSTD-202, 23-May-2011 ir 4427 cross reference DDFA free of IR sensors free download datasheet of IR sensors 6A10 Diodes Inc avalanche transistors DIODES 6A10 equivalent 6A4 zener 6a1 6A4-T

    transistor C 4429 equivalent

    Abstract: DIODES 6A10 6A10 Diodes Inc inverter driver bjt half bridge equivalent 6A4 free download datasheet of IR sensors
    Text: 6A05 - 6A10 6.0A SILICON RECTIFIER Features • • • High Surge Current Capability Low Leakage and Forward Voltage Drop Lead Free Finish, RoHS Compliant Note 1 Mechanical Data • • • • • • • Case: R-6 Case Material: Molded Plastic. UL Flammability


    Original     		PDF J-STD-020C MILSTD-202, 18-May-2011 transistor C 4429 equivalent DIODES 6A10 6A10 Diodes Inc inverter driver bjt half bridge equivalent 6A4 free download datasheet of IR sensors

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    80500 TRANSISTOR

    Abstract: LM113-1H
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 11/07/96 Last Update Date: 03/17/97 Last Major Revision Date: 11/07/96 MNLM113-1-X REV 1A0 REFERENCE DIODE General Description The LM113 is a temperature compensated, low voltage reference diode. It features


    Original     		PDF MNLM113-1-X LM113 2-Sep-2000] 28-Jun- 1-May98 4-Nov95 24-Feb- 80500 TRANSISTOR LM113-1H

    power BJT DARLINGTON PAIR NPN

    Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
    Text: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V


    Original     		PDF BAT54 BAT54A BAT54S BAT54C 05-Oct-2010 1280x768px. power BJT DARLINGTON PAIR NPN lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference

    Untitled

    Abstract: No abstract text available
    Text: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .


    OCR Scan     		PDF MAT-03 DAC-08, 992mA 992rnA, 008mA

    pmi dac08

    Abstract: DAC08
    Text: A N A L O G . E Ü D E V I C E S / P M I D I V S b E D • O ô l b f l O S MAT-03 0 Q G T 3 4 Ö 1 ■ LOW NOISE, MATCHED, _ DUAL PNP TRANSISTOR P r e c ip it in M o i i o l i t h i c s h ic . FEATURES • • • • • • • • Dual Matched PNP Transistor


    OCR Scan     		PDF MAT-03 100pV 190MHz DAC-08, 992mA 008mA pmi dac08 DAC08

    DARLINGTON phototransistor 14

    Abstract: phototransistor 3 pin LED phototransistor IC PACKAGE VISIBLE LIGHT PHOTOdarlington TRANSISTOR IR LED infrared led OPTICAL INTERRUPTER reflective object sensors
    Text: EO OPTOELECTRONICS TABLE OF CONTENTS Description VISIBLE PRODUCTS How To Use This Catalog Part Num ber Index OPTOCOUPLERS How To Use The V isible Products Section 55 V isib le Products Specification Definitions 56 3 mm T-1 and T-100 LED Lam ps 57 How To Use The O ptocoupler Section


    OCR Scan     		PDF T-13/4 DARLINGTON phototransistor 14 phototransistor 3 pin LED phototransistor IC PACKAGE VISIBLE LIGHT PHOTOdarlington TRANSISTOR IR LED infrared led OPTICAL INTERRUPTER reflective object sensors

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Low Noise, Matched Dual PNP Transistor MAT03 FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 n V /\ Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ


    OCR Scan     		PDF MAT03

    DAC-08

    Abstract: No abstract text available
    Text: ANALOG DEVICES Lo/vNase, ^fetched dial R\P Transistor M FEATURES Dual Matched P NPTransistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/^H z @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 M Hz typ Tight Gain M atching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ


    OCR Scan     		PDF