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    SUP80 Price and Stock

    Vishay Siliconix SUP80090E-GE3

    MOSFET N-CH 150V 128A TO220AB
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    DigiKey SUP80090E-GE3 Tube 755 1
    • 1 $2.94
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    • 100 $1.9998
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    • 10000 $1.375
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    Vishay Intertechnologies SUP80090E-GE3

    N-CHANNEL 150-V (D-S) MOSFET - Bulk (Alt: 86Y1094)
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    Avnet Americas SUP80090E-GE3 Bulk 56 Weeks, 4 Days 1
    • 1 $2.94
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    SUP80090E-GE3 Reel 26 Weeks 500
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    Mouser Electronics SUP80090E-GE3 891
    • 1 $2.94
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    Verical SUP80090E-GE3 500 500
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    SUP80090E-GE3 430 4
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    Arrow Electronics SUP80090E-GE3 430 26 Weeks 1
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    Newark SUP80090E-GE3 Bulk 754 1
    • 1 $2.94
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    TME SUP80090E-GE3 1
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    EBV Elektronik SUP80090E-GE3 29 Weeks 50
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    SMC Corporation of America CDRA1BSUP80-180U-X10X16

    ROTARY ACTUATOR, RACK & PINION TYPE, CRA1 SERIES | SMC Corporation CDRA1BSUP80-180U-X10X16
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    RS CDRA1BSUP80-180U-X10X16 Bulk 5 Weeks 1
    • 1 $774.74
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    SUP80 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SUP80090E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 128A TO220AB Original PDF
    SUP80N15-20L Vishay Siliconix N-Channel 150-V (D-S) 175°C MOSFET Original PDF
    SUP80N15-20L Vishay Siliconix MOSFETs Original PDF
    SUP80N15-20L SPICE Device Model Vishay N-Channel 150-V (D-S) 175°C MOSFET Original PDF

    SUP80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUP80N15-20L

    Abstract: No abstract text available
    Text: SUP80N15-20L New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 150 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 80 0.022 @ VGS = 4.5 V 76 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized With Low Threshold


    Original     		PDF SUP80N15-20L O-220AB Range80N15-20L S-31259--Rev. 16-Jun-03 SUP80N15-20L

    SUP80N15-20L

    Abstract: No abstract text available
    Text: SPICE Device Model SUP80N15-20L Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP80N15-20L S-71516Rev. 23-Jul-07 SUP80N15-20L

    SUP80N15-20L

    Abstract: No abstract text available
    Text: SPICE Device Model SUP80N15-20L Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP80N15-20L 12-Jun-04 SUP80N15-20L

    SUP80N15-20L

    Abstract: No abstract text available
    Text: SUP80N15-20L Vishay Siliconix New Product N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 150 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 80 0.022 @ VGS = 4.5 V 76 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized With Low Threshold


    Original     		PDF SUP80N15-20L O-220AB 18-Jul-08 SUP80N15-20L

    AN609

    Abstract: SUP80N15-20L
    Text: SUP80N15-20L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP80N15-20L AN609 03-Jan-08

    SUP80N15-20L

    Abstract: No abstract text available
    Text: SPICE Device Model SUP80N15-20L Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP80N15-20L 18-Jul-08 SUP80N15-20L

    Untitled

    Abstract: No abstract text available
    Text: SUP80N15-20L Vishay Siliconix New Product N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 150 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 80 0.022 @ VGS = 4.5 V 76 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized With Low Threshold


    Original     		PDF SUP80N15-20L O-220AB SUP80N15-20L 08-Apr-05

    SUP80N15-20L

    Abstract: No abstract text available
    Text: SUP80N15-20L Vishay Siliconix New Product N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 150 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 80 0.022 @ VGS = 4.5 V 76 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized With Low Threshold


    Original     		PDF SUP80N15-20L O-220AB S-31986--Rev. 13-Oct-03 SUP80N15-20L

    SUP80N15-20L

    Abstract: No abstract text available
    Text: SPICE Device Model SUP80N15-20L Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP80N15-20L 0-to10V 11-Aug-03 SUP80N15-20L

    TMS320C25

    Abstract: TMS320C26 TMS320 TMS32020 SPRU014 7a89 T1C 106D
    Text: TMS320C2x C Source Debugger User’s Guide 2563458-9721 revision A March 1991 important notice Texas Instruments Incorporated TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to


    Original     		PDF TMS320C2x Index-13 TMS320C25 TMS320C26 TMS320 TMS32020 SPRU014 7a89 T1C 106D

    SPRU019A

    Abstract: tms320c26 113A CMOS TMS320C26 schematic TMS320 TMS32020 TMS320C25 books National Semiconductor
    Text: \ TMS320C2x C Source Debugger Microprocessor Development Systems 2563458–9761 revision A SPRU070 TMS320C2x C Source Debugger User’s Guide 2563458-9721 revision A March 1991 TMS320C2x C Source Debugger Reference Card Phone Numbers TI Customer Response Center


    Original     		PDF TMS320C2x SPRU070 TMS320C2x Index-13 Index-14 SPRU019A tms320c26 113A CMOS TMS320C26 schematic TMS320 TMS32020 TMS320C25 books National Semiconductor

    sum45n25

    Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08
    Text: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)


    Original     		PDF VMN-SG2117-0705 sum45n25 PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    STK 1070

    Abstract: TMS320 TMS32020 TMS320C25 TMS320C26 C25co
    Text: TMS320C2x C Source Debugger User’s Guide 2563458-9721 revision A March 1991 important notice Texas Instruments Incorporated TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to


    Original     		PDF TMS320C2x Index-13 STK 1070 TMS320 TMS32020 TMS320C25 TMS320C26 C25co

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original     		PDF VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110

    TMS320

    Abstract: TMS32020 TMS320C25 TMS320C26 ar716 SPRU014B
    Text: \ TMS320C2x C Source Debugger Microprocessor Development Systems 2563458–9761 revision A SPRU070 TMS320C2x C Source Debugger User’s Guide 2563458-9721 revision A March 1991 TMS320C2x C Source Debugger Reference Card Phone Numbers TI Customer Response Center


    Original     		PDF TMS320C2x SPRU070 TMS320C2x TMS320 TMS32020 TMS320C25 TMS320C26 ar716 SPRU014B