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    SUMITOMO METAL Search Results

    SUMITOMO METAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    SUMITOMO METAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Sumitomo Metal

    Abstract: diodes h7d A504 piezoelectric ultrasonic Sumitomo 1000 KR Electronics spem 1012C Ultrasonic Piezoelectric
    Text: SUMITOMO Piezoelectric Products May 2003 Sumitomo Metal SMI Electronics Devices Inc. 1 SPEM Sumitomo PiezoElectric Materials 製品群 Products 圧電材料 微小位置決め用積層型アクチュエ−タ− バイモルフ型アクチュエ−タ−


    Original     		PDF 103kg/m3 Sumitomo Metal diodes h7d A504 piezoelectric ultrasonic Sumitomo 1000 KR Electronics spem 1012C Ultrasonic Piezoelectric

    sumitomo 6600

    Abstract: sumitomo epoxy 6600 4835 sumitomo EME 6600 sumitomo epoxy 8361H CY74FCT2245ATQC CY74FCT2646ATQC CY7C199-12VC JESD22
    Text: Cypress Semiconductor Qualification Report QTP# 99101 VERSION 1.0 May, 1999 Sumitomo EME 6600CR Molding Compound Cypress Philippines CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor Quality and Reliability Department Cypress Semiconductor


    Original     		PDF 6600CR 6600CR 85C/85% CY7C63101A-OC CY74FCT2646ATQC CY74FCT2245ATQC 619903565M1 CY7C1399-VC CY62256V-VC sumitomo 6600 sumitomo epoxy 6600 4835 sumitomo EME 6600 sumitomo epoxy 8361H CY74FCT2245ATQC CY74FCT2646ATQC CY7C199-12VC JESD22

    SUMITOMO EME6600

    Abstract: EME6600 Compound 6600cs 3818 MIL-STD-883c-method 1010 6600CS
    Text: Cypress Semiconductor Package Qualification Report QTP# 99234 VERSION 1.1 September 2000 52-208-pin Plastic Quad Flatpack Package PQFP Sumitomo 6600CS molding Compound ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director


    Original     		PDF 52-208-pin 6600CS 52-208-Lead N52D/N208L 52/208-pin CY82C693-NC 619909669B SUMITOMO EME6600 EME6600 Compound 6600cs 3818 MIL-STD-883c-method 1010

    sumitomo epoxy

    Abstract: 7C109A CY7C109 EME TI
    Text: Qualification Report January 1997 QTP# 95483, Version 1.0 SUMITOMO EME-9300 Low Alpha Molding Compound PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part


    Original     		PDF EME-9300 CY7C109 32-pin, 400-mil CY7C109) 7C109A PassivaY7C109-VC CY7C109-VC sumitomo epoxy 7C109A CY7C109 EME TI

    EME 7320

    Abstract: Ablestik Ablestik 8361 7320 a144g SUMITOMO EME G A100A CY7C09579V-AC JESD22 ASE Cypress
    Text: Cypress Semiconductor Mold Compound Qualification Report QTP# 002403 VERSION 1.0 January, 2001 Sumitomo EME 7320 Mold Compound, MSL3 for DCD-Thin Quad Flat Pack, TQFP ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director


    Original     		PDF 160-lead CY7C375I-AC EME 7320 Ablestik Ablestik 8361 7320 a144g SUMITOMO EME G A100A CY7C09579V-AC JESD22 ASE Cypress

    QMI 509 epoxy

    Abstract: SUMITOMO eme-6600hr 6600HR SOJ package MSL QMI 509 epoxy datasheet CY7C63001A-SC JESD22 EME6600HR mold compound EME 6600HR
    Text: Cypress Semiconductor Package Qualification Report QTP# 023401 VERSION 2.0 GI July, 2004 32-lead SOIC package using Sumitomo EME 6600HR Mold Compound, MSL1 Cypress Philippines CML-R CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Principal Reliability Engineer


    Original     		PDF 32-lead 6600HR 28-44lead 635mils 01BLL-SI 610221877M CY62128BLL-SI QMI 509 epoxy SUMITOMO eme-6600hr SOJ package MSL QMI 509 epoxy datasheet CY7C63001A-SC JESD22 EME6600HR mold compound EME 6600HR

    EGN13B200IV-R

    Abstract: F14G JESD22-A114
    Text: EGN13B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 170W min. @ Pin=4W (36dBm) •High Efficiency: 55%(typ.) @ Pin=4W (36dBm) DESCRIPTION Sumitomo GaN-HEMT EGN13B200IV-R offers high power, high


    Original     		PDF EGN13B200IV-R 36dBm) EGN13B200IV-R F14G JESD22-A114

    JESD22-A114

    Abstract: No abstract text available
    Text: EGN28B100IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 120W min. @ Pin=6.3W (38dBm) •High Efficiency: 56%(typ.) @ Pin=6.3W (38dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B100IV-R offers high power, high


    Original     		PDF EGN28B100IV-R 38dBm) EGN28B100IV-R JESD22-A114

    EGN28B400M1B-R

    Abstract: JESD22-A114 Sumitomo 1076
    Text: EGN28B400M1B-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 400W min. @ Pin=25W (44dBm) •High Efficiency: 50%(typ.) @ Pin=25W (44dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B400M1B-R offers high power, high


    Original     		PDF EGN28B400M1B-R 44dBm) EGN28B400M1B-R JESD22-A114 Sumitomo 1076

    JESD22-A114

    Abstract: Device Innovations
    Text: EGN29B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 200W min. @ Pin=15.8W (42dBm) •High Efficiency: 53%(typ.) @ Pin=15.8W (42dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B100IV-R offers high power, high


    Original     		PDF EGN29B200IV-R 42dBm) EGN28B100IV-R JESD22-A114 Device Innovations

    EGN28B200IV-R

    Abstract: JESD22-A114 S-Band Radar
    Text: EGN28B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 230W min. @ Pin=12.6W (41dBm) •High Efficiency: 53%(typ.) @ Pin=12.6W (41dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B100IV-R offers high power, high


    Original     		PDF EGN28B200IV-R 41dBm) EGN28B100IV-R EGN28B200IV-R JESD22-A114 S-Band Radar

    sumitomo CWDM

    Abstract: L-band laser
    Text: Wide Temperature -40 °C~95 °C Operation of Uncooled 1610 nm DFB Laser for CWDM Application Atsushi Matsumura, Takeshi Kishi, Michio Murata and Takashi Kato Sumitomo Electric Industries, Ltd.,1, Taya-cho, Sakae-ku, Yokohama, 244-8588, Japan, Email: matsumura-atsushi@sei.co.jp


    Original     		PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME

    ELPIDA

    Abstract: Elpida Memory NEC-Hitachi Memory working principle scanner TSOP II elpida Yaesu sagami DRAM elpida
    Text: TOPICS INTRODUCTION TO Elpida Memory, Inc. FORMERLY NEC-Hitachi Memory, Inc. Launch of World’s First 0.13 µm 256 Mb DRAM Hidemori Inukai Corporate Name Address Head office Sumitomo Seimei Yaesu Bldg. 3F, 2-1 Yaesu 2-chome, Chuo-ku, Tokyo Development center


    Original     		PDF 66-pin ELPIDA Elpida Memory NEC-Hitachi Memory working principle scanner TSOP II elpida Yaesu sagami DRAM elpida

    F0513

    Abstract: F0513005L LM324 sumitomo Laser diode driver
    Text: SUMITOMO ELECTRIC INDUSTRIES, LTD. 01.02.21 ♦ Features • Up to 3 Gbps high speed operation • Positive thermal coefficient of modulation current • Differential ECL compatible interface • -5.2 V single power supply • Up to 50 mA p-p modulation current


    Original     		PDF 18-terminal F0513005L F0513005L F0513 LM324 sumitomo Laser diode driver

    InP Laser Buried Heterostructure

    Abstract: Laser InP buried heterostructure InP Laser BH laser InP BH Laser InP MF50 10 gb laser diode
    Text: Highly Reliable AlGaInAs Buried Heterostructure Lasers for Uncooled 10Gb/s Direct Modulation N. Ikoma, T. Kawahara, N. Kaida, M. Murata, A. Moto, and T. Nakabayashi Transmission Devices R&D Laboratories, Sumitomo Electric Industries ltd.,1, Taya-cho, Sakae-ku, Yokohama 244-8588, Japan


    Original     		PDF 10Gb/s 000hours) 10-Gb/s InP Laser Buried Heterostructure Laser InP buried heterostructure InP Laser BH laser InP BH Laser InP MF50 10 gb laser diode

    MIL-DTL-27500

    Abstract: M22759/34 m27500 transfer impedance MIL-W-81381 M27500- twisted pair MIL-W-22759/44 m27500 m27500 sd XLETFE MIL-W-22759/34
    Text: Aerospace Wire and Cable Mil-W-22759 Mil-DTL-22759 Mil-DTL-27500 JWXLT Lightweight XLTFE Specialty Products JUDD WIRE INC. A member of the Sumitomo Electric Industries group of companies JUDD WIRE INC. Manufacturers of Superior Insulation Systems for Electrical Aerospace Wire and Cable


    Original     		PDF Mil-W-22759 Mil-DTL-22759 Mil-DTL-27500 Mil-W-22759/32 MIL-DTL-27500 M22759/34 m27500 transfer impedance MIL-W-81381 M27500- twisted pair MIL-W-22759/44 m27500 m27500 sd XLETFE MIL-W-22759/34

    0.1micro farad capacitor datasheet

    Abstract: F0321818M F0321818Q RL-50 GAAS FET AMPLIFIER for optical receiver
    Text: Preliminary SUMITOMO ELECTRIC INDUSTRIES, LTD. 01.02.19 ♦ Features F0321818Q 2 GHz Bandwidth • -5 V single power supply • 20 dB typical gain • 2.0 GHz typical -3 dB cutoff frequency • On-chip matching to 50 Ω • 55 mA typical operating current


    Original     		PDF F0321818Q 20-lead F0321818Q F0321818Q. F0321818M 0.1micro farad capacitor datasheet RL-50 GAAS FET AMPLIFIER for optical receiver

    F0515

    Abstract: F0515005L 18-terminal LM324 laser APC CIRCUIT
    Text: F0515005L 5 Gbps Laser Diode Driver SUMITOMO ELECTRIC INDUSTRIES, LTD. 00.02.24 ♦ Features F0515005L 5 Gbps NRZ Data Rate • Up to 5 Gbps high speed operation • Typical 110 psec rise and fall time • Differential ECL compatible interface • -5.2 V single power supply


    Original     		PDF F0515005L 18-terminal F0515005L F0515 LM324 laser APC CIRCUIT

    F0321818M

    Abstract: No abstract text available
    Text: SUMITOMO ELECTRIC INDUSTRIES, LTD. 01.02.19 ♦ Features • +5 V single power supply • 20 dB typical gain • 2.0 GHz typical -3 dB cutoff frequency • On-chip matching to 50 Ω • 55 mA typical operating current • Low-cost 18-lead MFP package • Differential input and output


    Original     		PDF 18-lead F0321818M F0321818M F0321818M.

    EMM5068VU

    Abstract: MMIC MAR-6 EMM5068VUT EMM5068 MAR-2 MMIC RO4003 95GHZ 21373 power amplifier mmic EMM506
    Text: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages


    Original     		PDF EMM5068VU EMM5068VU MMIC MAR-6 EMM5068VUT EMM5068 MAR-2 MMIC RO4003 95GHZ 21373 power amplifier mmic EMM506

    EMM5075VU

    Abstract: EMM5075 EMM5075VUT Rogers RO4003 RO4003 power amplifier mmic
    Text: EMM5075VU Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 12.7~15.4GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) Device DESCRIPTION


    Original     		PDF EMM5075VU EMM5075VU 1200mA EMM5075 EMM5075VUT Rogers RO4003 RO4003 power amplifier mmic

    EMM5832VU

    Abstract: EMM5832 k-band amplifier C 1162 RO4003 8-12 GHz power amplifier mmic 40 dBm power amplifier mmic
    Text: EMM5832VU K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=31.0dBm typ. ・High Linear Gain: GL=20.0dB (typ.) ・Broad Band: 21.2~26.5GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5832VU is a MMIC amplifier that contains a four-stage


    Original     		PDF EMM5832VU EMM5832VU 800mA EMM5832 k-band amplifier C 1162 RO4003 8-12 GHz power amplifier mmic 40 dBm power amplifier mmic

    EMM5837V1BT

    Abstract: power amplifier mmic
    Text: EMM5837V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band:21.2～23.6GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5837V1B is a MMIC amplifier that contains a four-stage


    Original     		PDF EMM5837V1B EMM5837V1B EMM5837V1BT power amplifier mmic