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    SUBTHRESHOLD LOGIC Search Results

    SUBTHRESHOLD LOGIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541B01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable Visit Toshiba Electronic Devices & Storage Corporation

    SUBTHRESHOLD LOGIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    simple inverter schematic circuit

    Abstract: logic gates ALD110800 ALD110802 ALD110804
    Text: Category: Special Circuits CIRCUIT IDEAS FOR DESIGNERS Schematic no. SPCKT_10003.0 0.2V Supply Voltage Nanopower Two-Input NOR and NAND gates Description Simple logic gates such as NOR and NAND gates can be readily implemented using EPAD MOSFETs to operate


    Original     		PDF 200mV ALD110802) ALD110800 ALD110802 ALD110804 simple inverter schematic circuit logic gates

    fet_11116.0

    Abstract: No abstract text available
    Text: Category: FET CIRCUIT IDEAS FOR DESIGNERS Schematic no. fet_11116.0 Ultra low voltage Nanopower Two-Input NOR and NAND gates Description Simple logic gates such as NOR and NAND gates can be readily implemented using EPAD MOSFETs to operate at ultra low voltage and low current levels. At V+ supply voltages below 400 mV, EPAD MOSFETs are actually


    Original     		PDF 200mV ALD110802) fet_11116.0

    spckt_10003.0

    Abstract: No abstract text available
    Text: Category: Special Circuits CIRCUIT IDEAS FOR DESIGNERS Schematic no. SPCKT_10003.0 0.2V Supply Voltage Nanopower Two-Input NOR and NAND gates Description Simple logic gates such as NOR and NAND gates can be readily implemented using EPAD MOSFETs to operate


    Original     		PDF 200mV ALD110802) spckt_10003.0

    Ultra Low voltage mosfet

    Abstract: Logic Gates ALD110800 ALD110802 ALD110804 subthreshold logic
    Text: CIRCUIT IDEAS FOR DESIGNERS Category: FET Schematic no. fet_11116.0 Ultra low voltage Nanopower Two-Input NOR and NAND gates Description Simple logic gates such as NOR and NAND gates can be readily implemented using EPAD MOSFETs to operate at ultra low voltage and low current levels. At V+ supply voltages below 400 mV, EPAD MOSFETs are actually


    Original     		PDF 200mV ALD110802) ALD110800 ALD110802 ALD110804 Ultra Low voltage mosfet Logic Gates subthreshold logic

    Untitled

    Abstract: No abstract text available
    Text: Engineering Ultra Low Power System on Chip Sensors Steve Grady – Cymbet Scott Hanson – Ambiq Micro Jim Magos – Cardinal Components Key Trends Driving Micro SoC Sensors Ultra Low Power Processors Smart Devices and Sensors Everywhere Wireless is pervasive


    Original     		PDF CBC34813 AM0813

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT108N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As advanced N-channel logic level MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and


    Original     		PDF UT108N03 UT108N03L UT108N03G UT108N03-TN3-R UT108N03L-TN3-R UT108N03G-TN3-R O-252 QW-R502-197

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD212900/ALD212900A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V DUAL HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ® ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These


    Original     		PDF ALD212900/ALD212900A ALD212900A/ALD212900 ALD110900A/ALD110900 ALD212900A/ ALD212900

    QUANTUM CAPACITIVE

    Abstract: floating-gate 4156C flash "high temperature data retention" mechanism split-gate flash quantum dot
    Text: Detection of Single-Electron Transfer Events and Capacitance Measurements in Submicron Floating-Gate Memory Cells Yuri Tkachev and Alexander Kotov Silicon Storage Technology, Inc. Sunnyvale, USA e-mail: ytkachev@sst.com Abstract—A simple technique for monitoring floating gate


    Original     		PDF 0-23A QUANTUM CAPACITIVE floating-gate 4156C flash "high temperature data retention" mechanism split-gate flash quantum dot

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These


    Original     		PDF ALD210800/ALD210800A ALD210800A/ALD210800 ALD110800A/ALD110800

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These


    Original     		PDF ALD210800/ALD210800A ALD210800A/ALD210800 ALD110800A/ALD110800

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD212900/ALD212900A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V DUAL HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ® ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These


    Original     		PDF ALD212900/ALD212900A ALD212900A/ALD212900 ALD110900A/ALD110900 ALD212900A/ ALD212900

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT108N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As advanced N-channel logic level MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior


    Original     		PDF UT108N03 UT108N03 UT108N03L UT108N03-TN3-R UT108N03L-TN3-R UT108N03-TN3-T UT108N03L-TN3-T O-252 QW-R502-197

    WP-01006

    Abstract: tsmc 130nm metal process 2015 static ram Position Estimation
    Text: White Paper Stratix III Programmable Power Introduction Traditionally, digital logic has not consumed significant static power, but this has changed with very small process nodes. Leakage current in digital logic is now the primary challenge for FPGAs as process geometries decrease.


    Original     		PDF 65-nm WP-01006 tsmc 130nm metal process 2015 static ram Position Estimation

    XC9572XL TQG100

    Abstract: XC9500XL schematic of TTL XOR Gates XC9572XL XC9572XL Series PC44 VQ44 XC9500 XC95144XL XC95288XL
    Text: k XC9500XL High-Performance CPLD Family Data Sheet R DS054 v2.2 July 25, 2006 Product Specification Features • • Optimized for high-performance 3.3V systems - 5 ns pin-to-pin logic delays, with internal system frequency up to 208 MHz - Small footprint packages including VQFPs, TQFPs


    Original     		PDF XC9500XL DS054 XC95288XL CS280 DS054 44-pin XC9572XL TQG100 schematic of TTL XOR Gates XC9572XL XC9572XL Series PC44 VQ44 XC9500 XC95144XL XC95288XL

    transistor 911

    Abstract: transistor k 911
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK581-60A Logic level FET _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount


    OCR Scan     		PDF BUK581-60A OT223 BUK581-60A transistor 911 transistor k 911

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


    OCR Scan     		PDF BUK565-60A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope suitable for surface mount applications.


    OCR Scan     		PDF BUK581-60A OT223

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode logic level fieid-effect power transistor in a


    OCR Scan     		PDF BUK564-200A BUK564-200A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a


    OCR Scan     		PDF BUK564-200A BUK564-200A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope


    OCR Scan     		PDF BUK581-100A OT223 BUK581-100A OT223.

    S25 zener diode

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK9508-55 T0220AB IE-02 1E-05 S25 zener diode

    BUK582-60A

    Abstract: No abstract text available
    Text: bTE T> m N AMER PHILIPS/DISCRETE 1^53^31 DD30flM2 52b • APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount


    OCR Scan     		PDF 0G3Dfl42 BUK582-60A OT223 bbS3131- BUK582-60A OT223. 35\im

    C 828 Transistor

    Abstract: buk553 BUK553-100A
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK553-100A/B BUK553 -100A -100B T0220AB 553-100A/B C 828 Transistor BUK553-100A

    LD25C

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF BUK553-100A/B BUK553 -100A -100B BUK553-1OOA/B LD25C