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    SUB75N08-10 SPICE DEVICE MODEL Search Results

    SUB75N08-10 SPICE DEVICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    SUB75N08-10 SPICE DEVICE MODEL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUB75N08-10 SPICE Device Model Vishay N-Channel Enhancement-Mode Transistors Original PDF

    SUB75N08-10 SPICE DEVICE MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7093

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N08-10 N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N08-10 7093

    TF 4890

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N08-10 N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N08-10 18-Jul-08 TF 4890

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N08-10 Vishay Siliconix N-Channel Enhancement-Mode Transistors CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N08-10 18-Jul-08

    DIODE B-10

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N08-10 Vishay Siliconix N-Channel Enhancement-Mode Transistors CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N08-10 S-60545Rev. 10-Apr-06 DIODE B-10

    SUB75N08-10 SPICE Device Model

    Abstract: 57TR
    Text: SPICE Device Model SUP/SUB75N08-10 Vishay Siliconix N-Channel Enhancement-Mode Transistors CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit Schematic • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N08-10 14-Sep-98 SUB75N08-10 SPICE Device Model 57TR