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Abstract: No abstract text available
Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested 1 2 • Hermetic package 3 • 100 krad TID • SEE radiation hardened TO-257AA
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STRH12P10
O-257AA
DocID022337
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STRH12P10GYG
Abstract: No abstract text available
Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package • 100 krad TID • SEE radiation hardened TO-257AA Applications
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STRH12P10
O-257AA
DocID022337
STRH12P10GYG
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Untitled
Abstract: No abstract text available
Text: STRH12P10 Rad-Hard P-channel 100 V, 12 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 12 A TBD TBD • Fast switching ■ 100% avalanche tested 1 ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 2 3 TO-257AA Applications ■ Satellite ■
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STRH12P10
O-257AA
SC06140p
STRH12P10GY1
O-257AA
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