STP60N05
Abstract: STP60N05FI
Text: STP60N05 STP60N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.02 Ω < 0.02 Ω 60 A 32 A TYPICAL RDS(on) = 0.017 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STP60N05
STP60N05FI
100oC
175oC
O-220
ISOWATT220
STP60N05
STP60N05FI
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Untitled
Abstract: No abstract text available
Text: STP60N05FI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)32# I(DM) Max. (A) Pulsed I(D)22 @Temp (øC)100# IDM Max (@25øC Amb)240 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45# Minimum Operating Temp (øC)
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STP60N05FI
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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HA 1137
Abstract: STP60N05 STP60N05FI
Text: 712'1237 004fci53cî Dñ2 • S6TH SCS-THOMSON l G  L IK S ï^ M O S T P 6 0 N û S S T P 6 0 N 0 5 0 5 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI . ■ ■ . . . . . . V dss R dS OII Id 50 V 50 V < 0.02 Q < 0.02 £2
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004b53cÃ
STP60N05
STP60N05FI
STP60N05
STP60N05FI
0G4b54S
STP60N05/FI
5g05970
HA 1137
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STP60N05FI
Abstract: 20KN50 STP60N05 W237 SGS Transistor
Text: 7=12=1237 □04fciS3cî Dfi2 • SGTH SGS-THOMSON STP60N05 STP60N05FI ¡ILJOTMiiKgS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP60N05 STP60N05FI ■ . ■ . ■ . ■ . . 50 V 50 V RDS on < 0.02 < 0.02 Ü n Id 60 A 32 A TYPICAL RDS(on) = 0.017 a
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04fci53cÃ
STP60N05
STP60N05FI
STP60N05
STP60N05FI
7TH1237
4b545
STP60N05/FI
20KN50
W237
SGS Transistor
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GC27980
Abstract: No abstract text available
Text: SGS-THOMSON ï ULKgraMOeS £j STP60N05 STP60N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP60N 05 STP60N 05FI V dss RDS on Id 50 V 50 V < 0.0 2 Q. < 0.0 2 Q. 60 A 32 A . Q . . TYPICAL RDs(on) = 0.017 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED
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TP60N
STP60N
STP60N05
STP60N05FI
GC27980
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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