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    STP4N100XI Search Results

    STP4N100XI Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STP4N100XI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP4N100XI Unknown Shortform Datasheet & Cross References Data Short Form PDF

    STP4N100XI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    stp4n100xi

    Abstract: No abstract text available
    Text: r z 7 # S G S -m o M S O N M g G » [L IO T (Q * S S T P 4 N 1 0 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 4 N 10 0 XI . . . . . . V dss R d S ( o ii Id 1 00 0 V 4 il 2 A AVALANCHE RUG G EDNESS TECHNO LO G Y 100% AVALANC HE TESTED


    OCR Scan     		PDF STP4N100XI stp4n100xi

    Untitled

    Abstract: No abstract text available
    Text: m 7*12*1237 rz 7 Ä 7f G04b243 ôbQ • SGTH _ SGS-TUOMSON RÆ Q M[iLËOT(s«S S T P 4 N 1 0 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP 4N 1 0 0 X I ■ . ■ . . ■ . 1000 V R d S( oii < 4 0 Id 2 A TYPICAL RDS(on) = 3.1 Cl


    OCR Scan     		PDF G04b243 7TETS37 STP4N100XI