STP3481 Search Results

STP3481 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
marking 52a Abstract: DIODE 30V TSOP DIODE S6 52a 6P marking Text: STP3481 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	PDF	STP3481 STP3481 -30V/-5 55m-ohm -30V/-4 75m-ohm marking 52a DIODE 30V TSOP DIODE S6 52a 6P marking

Catalog Datasheet

MFG & Type

PDF

Document Tags

marking 52a

Abstract: DIODE 30V TSOP DIODE S6 52a 6P marking
Text: STP3481 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Original

PDF

STP3481 STP3481 -30V/-5 55m-ohm -30V/-4 75m-ohm marking 52a DIODE 30V TSOP DIODE S6 52a 6P marking