Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    STP19N06FI Search Results

    STP19N06FI Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STP19N06FI STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STP19N06FI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF

    STP19N06FI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c1913

    Abstract: STP19N06 STP19N06FI 0119a
    Text: STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP19N06 STP19N06FI 100oC 175oC O-220 ISOWATT220 c1913 STP19N06 STP19N06FI 0119a

    STP19N06

    Abstract: STP19N06FI
    Text: STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP19N06 STP19N06FI 100oC 175oC O-220 ISOWATT220 STP19N06 STP19N06FI