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    STMICROELECTRONICS DIODE MARKING CODE GW Search Results

    STMICROELECTRONICS DIODE MARKING CODE GW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    STMICROELECTRONICS DIODE MARKING CODE GW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STMicroelectronics DIODE marking code DX

    Abstract: STMicroelectronics DIODE marking code Et transil 6.8v STMicroelectronics marking code date me 6.8V bidirectional transil MARKING code mx stmicroelectronics code mx stmicroelectronics STMicroelectronics DIODE marking code ER GW marking code diode STMicroelectronics DIODE marking code gw
    Text: SM6T6V8A/220A SM6T6V8CA/220CA  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB


    Original     		PDF SM6T6V8A/220A SM6T6V8CA/220CA D0-214AA) STMicroelectronics DIODE marking code DX STMicroelectronics DIODE marking code Et transil 6.8v STMicroelectronics marking code date me 6.8V bidirectional transil MARKING code mx stmicroelectronics code mx stmicroelectronics STMicroelectronics DIODE marking code ER GW marking code diode STMicroelectronics DIODE marking code gw

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original     		PDF STRH100N6 O-254AA STRH100N6HY1 DocID18353

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original     		PDF STRH100N6 O-254AA STRH100N6HY1 DocID18353

    STMicroelectronics DIODE marking code Et

    Abstract: STMicroelectronics dx DIODE marking code MARKING code mx stmicroelectronics sm6t15ca 6.8V bidirectional transil SM6T39A EX D0-214AA SM6T10A SM6T15A SM6T18A
    Text: SM6T6V8A/220A SM6T6V8CA/220CA TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB


    Original     		PDF SM6T6V8A/220A SM6T6V8CA/220CA D0-214AA) STMicroelectronics DIODE marking code Et STMicroelectronics dx DIODE marking code MARKING code mx stmicroelectronics sm6t15ca 6.8V bidirectional transil SM6T39A EX D0-214AA SM6T10A SM6T15A SM6T18A

    STMicroelectronics DIODE marking code Et

    Abstract: STMicroelectronics DIODE marking code DX diodes STmicroelectronics marking MP STMicroelectronics DIODE marking code ER STMicroelectronics DIODE marking code EE transil 6.8v STMicroelectronics marking code date me code mx stmicroelectronics SM6T12A SM6T22A
    Text: SM6T6V8A/220A SM6T6V8CA/220CA  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB


    Original     		PDF SM6T6V8A/220A SM6T6V8CA/220CA D0-214AA) STMicroelectronics DIODE marking code Et STMicroelectronics DIODE marking code DX diodes STmicroelectronics marking MP STMicroelectronics DIODE marking code ER STMicroelectronics DIODE marking code EE transil 6.8v STMicroelectronics marking code date me code mx stmicroelectronics SM6T12A SM6T22A

    Untitled

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


    Original     		PDF STRH40N6 STRH40N6S1

    Untitled

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


    Original     		PDF STRH40N6 STRH40N6S1

    Untitled

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


    Original     		PDF STRH40N6 STRH40N6S1 STRH40N6SG

    RAD SMD MARKING CODE

    Abstract: smd diode marking code TO3
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


    Original     		PDF STRH40N6 STRH40N6S1 DocID18351 RAD SMD MARKING CODE smd diode marking code TO3

    GW30N90D

    Abstract: JESD97 STGW30N90D
    Text: STGW30N90D N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT Preliminary Data Features Type VCES VCE sat @25°C IC @100°C STGW30N90D 900V < 2.75V 30A • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)


    Original     		PDF STGW30N90D O-247 GW30N90D JESD97 STGW30N90D

    GW35NC60WD

    Abstract: STGW35NC60WD Gw35nc60 Diode CO 820 JESD97
    Text: STGW35NC60WD N-channel 40A - 600V - TO-247 Ultra fast switching PowerMESH IGBT Preliminary Data Features Type VCES VCE sat Max @25°C IC @100°C STGW35NC60WD 600V < 2.5V 37A • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility)


    Original     		PDF STGW35NC60WD O-247 GW35NC60WD STGW35NC60WD Gw35nc60 Diode CO 820 JESD97

    transil sm6t

    Abstract: sm6t 26 ca diode s 30ca smb marking mp STMicroelectronics marking code date me ST marking code GL ST MX mark diode DIODE marking le st ER diode SMB marking lg smb
    Text: SM6T Transil Features • Peak Pulse Power: 600 W 10/1000 µs ■ Breakdown voltage range: From 6.8 V to 220 V ■ Uni and Bidirectional types ■ Low clamping factor ■ Fast response time K ■ UL recognized Unidirectional A Bidirectional Description


    Original     		PDF DO-214AA) transil sm6t sm6t 26 ca diode s 30ca smb marking mp STMicroelectronics marking code date me ST marking code GL ST MX mark diode DIODE marking le st ER diode SMB marking lg smb

    diode GU do-214aA

    Abstract: STMicroelectronics DIODE marking code Et marking codes ER diode SMB marking lg smb ST marking code GL transil sm6t UM marking code DO214AA STMicroelectronics DIODE marking code EE DIODE SM6T75A GW marking code diode
    Text: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■


    Original     		PDF DO-214AA) E136224 diode GU do-214aA STMicroelectronics DIODE marking code Et marking codes ER diode SMB marking lg smb ST marking code GL transil sm6t UM marking code DO214AA STMicroelectronics DIODE marking code EE DIODE SM6T75A GW marking code diode

    transil marking EM

    Abstract: No abstract text available
    Text: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■


    Original     		PDF DO-214AA) transil marking EM

    GW30NC60WD

    Abstract: STGW30NC60WD JESD97 GW30NC60W
    Text: STGW30NC60WD N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH IGBT Features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60WD 600V < 2.5V 30A • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■


    Original     		PDF STGW30NC60WD O-247 GW30NC60WD STGW30NC60WD JESD97 GW30NC60W

    solar inverters schematic diagram

    Abstract: STGW50HF60SCD ST IGBT code marking
    Text: STGW50HF60SCD 60 A - 600 V - very low drop IGBT with Schottky silicon carbide diode Target specification Features • Very low on-state voltage drop ■ Low CRES/CIES ratio no cross-conduction susceptibility ■ No or negligible reverse recovery antiparallel


    Original     		PDF STGW50HF60SCD O-247 solar inverters schematic diagram STGW50HF60SCD ST IGBT code marking

    STGW35HF60WD

    Abstract: No abstract text available
    Text: STGW35HF60WD 35 A, 600 V ultra fast IGBT Features • Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses ■ VCE sat classified for easy parallel connection ■ Ultra fast soft recovery antiparallel diode 2 Applications


    Original     		PDF STGW35HF60WD O-247 STGW35HF60WD

    GW19NC60WD

    Abstract: gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97
    Text: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A 3 • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction


    Original     		PDF STGW19NC60WD STGP19NC60WD O-220 O-247 O-220 GW19NC60WD gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97

    internal structure of ic 741

    Abstract: internal circuit diagram of IC 741 ic 741 DIODE STGW25H120DF
    Text: STGW25H120DF 25 A, 1200 V, field stop trench gate IGBT with Ultrafast diode Preliminary data Features • Very high speed switching ■ Tight parameters distribution ■ Easy paralleling ■ Ultra fast free-wheeling diode co-packaged ■ Low thermal resistance


    Original     		PDF STGW25H120DF O-247 internal structure of ic 741 internal circuit diagram of IC 741 ic 741 DIODE STGW25H120DF

    STGW30NC60VD

    Abstract: GW30NC60VD JESD97
    Text: STGW30NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW30NC60VD 600V VCE sat (Max)@ 25°C IC @100°C <2.5V 40A • High current capability ■ High frequency operation up to 50KHz ■ Very soft ultra fast recovery antiparallel diode


    Original     		PDF STGW30NC60VD O-247 STGW30NC60VD 50KHz GW30NC60VD JESD97

    GW19NC60WD

    Abstract: gw19nc60w
    Text: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction


    Original     		PDF STGW19NC60WD STGP19NC60WD O-220 O-247 O-220 GW19NC60WD gw19nc60w

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65F 60 A, 650 V field stop trench gate IGBT Features • Very high speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Lead free package 2 3 1 Applications TO-247


    Original     		PDF STGW60H65F O-247

    Untitled

    Abstract: No abstract text available
    Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)


    Original     		PDF STGW30NC120HD O-247 STGW30NC120HD

    STGW30NC120HD

    Abstract: GW30NC120HD JESD97
    Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)


    Original     		PDF STGW30NC120HD O-247 STGW30NC120HD GW30NC120HD JESD97