ST MICROELECTRONICS DATE CODE MARKING
Abstract: st microelectronics datecode R20 marking EMIF04-MMC02F3 ST MICROELECTRONICS MARKING AN1235 AN1751 PM505
Text: EMIF04-MMC02F3 4 LINES EMI FILTER AND ESD PROTECTION FOR MULTIMEDIA CARD Main product characteristics: Where EMI filtering in ESD sensitive equipment is required : • MultiMedia Card for mobile phones, Personal Digital Assistant, Digital Camera, MP3 players.
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EMIF04-MMC02F3
EMIF04-MMC02F3
EMIF04
ST MICROELECTRONICS DATE CODE MARKING
st microelectronics datecode
R20 marking
ST MICROELECTRONICS MARKING
AN1235
AN1751
PM505
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R20 marking
Abstract: AN1235 AN1751 EMIF04-MMC02F3 PM505 400um ST MICROELECTRONICS DATE CODE MARKING
Text: EMIF04-MMC02F3 4 LINES EMI FILTER AND ESD PROTECTION FOR MULTIMEDIA CARD Main product characteristics: Where EMI filtering in ESD sensitive equipment is required : • MultiMedia Card for mobile phones, Personal Digital Assistant, Digital Camera, MP3 players.
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EMIF04-MMC02F3
EMIF04-MMC02F3
EMIF04
R20 marking
AN1235
AN1751
PM505
400um
ST MICROELECTRONICS DATE CODE MARKING
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CP3121
Abstract: L3000N LCP3121 SMBYW01-200 TL 431 SO8 diode gp 538 STMicroelectronics DIODE marking code GP
Text: LCP3121 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES AND BENEFITS UNIDIRECTIONAL OVERVOLTAGE SUPPRESSOR PROGRAMMABLE BY VOLTAGE AND CURRENT: PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. PROGRAMMABLE CURRENT LIMITATION
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LCP3121
LCP3121
CP3121
L3000N
SMBYW01-200
TL 431 SO8
diode gp 538
STMicroelectronics DIODE marking code GP
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GP6NC60HD
Abstract: L30 diode part marking STGP6NC60HD STGF6NC60HD STMicroelectronics date code TO-220 GF6NC60HD
Text: STGP6NC60HD STGF6NC60HD N-CHANNEL 6A - 600V TO-220/TO-220FP Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGP6NC60HD STGF6NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V
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STGP6NC60HD
STGF6NC60HD
O-220/TO-220FP
O-220FP
O-220
GP6NC60HD
L30 diode part marking
STGF6NC60HD
STMicroelectronics date code TO-220
GF6NC60HD
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STGP3NC60HD
Abstract: No abstract text available
Text: STGP3NC60HD STGF3NC60HD N-CHANNEL 3A - 600V TO-220/TO-220FP Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGP3NC60HD STGF3NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V
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STGP3NC60HD
STGF3NC60HD
O-220/TO-220FP
O-220FP
O-220
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gp 431
Abstract: CP3121 LCP3121 1/Diode gp 431 STMicroelectronics SO8 431 L3000N SMBYW01-200 GP SERIES RESISTORS a gn 137
Text: LCP3121 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES AND BENEFITS UNIDIRECTIONAL OVERVOLTAGE SUPPRESSOR PROGRAMMABLE BY VOLTAGE AND CURRENT: PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. PROGRAMMABLE CURRENT LIMITATION
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LCP3121
LCP3121
gp 431
CP3121
1/Diode gp 431
STMicroelectronics SO8 431
L3000N
SMBYW01-200
GP SERIES RESISTORS
a gn 137
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GP 048 DIODE
Abstract: STMicroelectronics SO8 431 CP3121 2.5kV ZENER DIODE diode gp 538 TR-NWT-000974 358 marking stmicroelectronics LCP3121 SMBYW01-200 L3000N
Text: LCP3121 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES AND BENEFITS UNIDIRECTIONAL OVERVOLTAGE SUPPRESSOR PROGRAMMABLE BY VOLTAGE AND CURRENT: PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. PROGRAMMABLE CURRENT LIMITATION
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LCP3121
LCP3121
GP 048 DIODE
STMicroelectronics SO8 431
CP3121
2.5kV ZENER DIODE
diode gp 538
TR-NWT-000974
358 marking stmicroelectronics
SMBYW01-200
L3000N
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gf3nc
Abstract: GP3NC60HD
Text: STGP3NC60HD STGF3NC60HD N-CHANNEL 3A - 600V TO-220/TO-220FP Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGP3NC60HD STGF3NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V
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STGP3NC60HD
STGF3NC60HD
O-220/TO-220FP
O-220FP
O-220
gf3nc
GP3NC60HD
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GP7NC60H
Abstract: TO-220 footprint STMicroelectronics Date Code DPAK STMicroelectronics to-220 date code STGP7NC60H D7NC60H STGD7NC60H STGD7NC60HT4 TO252-DPAK STMicroelectronics date code to-220
Text: STGP7NC60H - STGD7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)
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STGP7NC60H
STGD7NC60H
O-220/DPAK
STGP7NC60H
STGD7NC60HT4
GP7NC60H
TO-220 footprint
STMicroelectronics Date Code DPAK
STMicroelectronics to-220 date code
D7NC60H
STGD7NC60H
STGD7NC60HT4
TO252-DPAK
STMicroelectronics date code to-220
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STMicroelectronics Date Code DPAK
Abstract: No abstract text available
Text: STGP7NC60H - STGD7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)
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STGP7NC60H
STGD7NC60H
O-220/DPAK
STGP7NC60H
STGD7NC60HT4
STMicroelectronics Date Code DPAK
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STGD7NC60H
Abstract: GP7NC60H STGD7NC60HT4 STGP7NC60H STMicroelectronics date code TO-220
Text: STGP7NC60H - STGD7NC60H N-CHANNEL 7A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)
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STGP7NC60H
STGD7NC60H
O-220/DPAK
STGP7NC60H
STGD7NC60HT4
STGD7NC60H
GP7NC60H
STGD7NC60HT4
STMicroelectronics date code TO-220
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GP7NC60HD
Abstract: GF7NC60HD gp7nc60 STGB7NC60HDT STGB7NC60HD STGB7NC60HDT4 STGF7NC60HD STGP7NC60HD gf7nc GP7NC60H
Text: STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 7A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGP7NC60HD STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C
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STGP7NC60HD
STGF7NC60HD
STGB7NC60HD
O-220/TO-220FP/D
STGF7NC60HD
O-220
O-220FP
GP7NC60HD
GF7NC60HD
gp7nc60
STGB7NC60HDT
STGB7NC60HD
STGB7NC60HDT4
STGP7NC60HD
gf7nc
GP7NC60H
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GP7NC60HD
Abstract: GF7NC60HD GP7NC60H GF7NC60 gp7nc60 GB7NC60HD STGF7NC60HD STGP7NC60HD gf7nc ST T4 1060
Text: STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 7A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGP7NC60HD STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C
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STGP7NC60HD
STGF7NC60HD
STGB7NC60HD
O-220/TO-220FP/D
STGF7NC60HD
O-220
O-220FP
GP7NC60HD
GF7NC60HD
GP7NC60H
GF7NC60
gp7nc60
GB7NC60HD
STGP7NC60HD
gf7nc
ST T4 1060
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GP7NC60HD
Abstract: STGP7NC60HD GP7NC60H GF7NC60HD STGB7NC60HDT4 STGF7NC60HD STGB7NC60HD gp7nc60
Text: STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGP7NC60HD STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C
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STGP7NC60HD
STGF7NC60HD
STGB7NC60HD
O-220/TO-220FP/D
STGF7NC60HD
O-220
O-220FP
GP7NC60HD
STGP7NC60HD
GP7NC60H
GF7NC60HD
STGB7NC60HDT4
STGB7NC60HD
gp7nc60
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Untitled
Abstract: No abstract text available
Text: ESDARF03-1BF3 Ultralow capacitance ESD protection for antenna Features • ultralow diode capacitance 0.6 pF ■ Single line, protected against 15 kV ESD ■ breakdown voltage VBR = 6.0 V min. ■ Flip Chip 400 µm pitch, lead-free ■ very low leakage current
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ESDARF03-1BF3
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AN1751
Abstract: AN2348 MARKING R3 149-2G
Text: ESDARF03-1BF3 Ultralow capacitance ESD protection for antenna Features • ultralow diode capacitance 0.6 pF ■ Single line, protected against 15 kV ESD ■ breakdown voltage VBR = 6.0 V min. ■ Flip Chip 400 µm pitch, lead-free ■ very low leakage current
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ESDARF03-1BF3
AN1751
AN2348
MARKING R3
149-2G
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GP19NC60WD
Abstract: No abstract text available
Text: STGP19NC60WD N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT General features Type VCES STGP19NC60WD 600V VCE sat IC @100°C (max)@25°C < 2.5V 19A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility) ■ Very soft ultra fast recovery antiparallel diode
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STGP19NC60WD
O-220
GP19NC60WD
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GW19NC60WD
Abstract: gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97
Text: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A 3 • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction
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STGW19NC60WD
STGP19NC60WD
O-220
O-247
O-220
GW19NC60WD
gw19nc60w
GP19NC60WD
STGP19NC60WD
STGW19NC60WD
JESD97
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GW19NC60WD
Abstract: gw19nc60w
Text: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction
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STGW19NC60WD
STGP19NC60WD
O-220
O-247
O-220
GW19NC60WD
gw19nc60w
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GP19NC60W
Abstract: JESD97 STGP19NC60W
Text: STGP19NC60W N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA Features Type VCES STGP19NC60W 600V VCE sat IC @100°C (max)@25°C < 2.5V 22A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility)
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STGP19NC60W
O-220
GP19NC60W
JESD97
STGP19NC60W
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Untitled
Abstract: No abstract text available
Text: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS
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SD2932
SD2932
SD2932W
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GP30H
Abstract: STGP30H60DF
Text: STGB30H60DF STGP30H60DF 30 A, 600 V field stop trench gate IGBT with Ultrafast diode Target specification Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time
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STGB30H60DF
STGP30H60DF
O-220
GP30H
STGP30H60DF
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ZENER MARKING C8 ST
Abstract: CAPACITOR 64 680 4J diode t25 4 L5 SD2932 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
Text: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS
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SD2932
SD2932
SD2932W
ZENER MARKING C8 ST
CAPACITOR 64 680 4J
diode t25 4 L5
neosid
RG316-25
vk200 ferrite bead
SD2932W
diode marking 100b
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GP19NC60SD
Abstract: JESD97 STGP19NC60SD
Text: STGP19NC60SD N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60SD 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling
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STGP19NC60SD
O-220
GP19NC60SD
JESD97
STGP19NC60SD
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