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    STMICROELECTRONICS DIODE MARKING CODE EX Search Results

    STMICROELECTRONICS DIODE MARKING CODE EX Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    STMICROELECTRONICS DIODE MARKING CODE EX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STD40NF10

    Abstract: D40NF
    Text: STD40NF10 N-channel 100 V, 0.025 Ω, 50 A DPAK low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STD40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 DPAK Application


    Original     		PDF STD40NF10 STD40NF10 D40NF

    f10nk50z

    Abstract: f10nk f10nk50 STF10NK F10N STF10NK50Z
    Text: STF10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH Power MOSFET in TO-220FP package Datasheet — production data Features Order code VDSS RDS on max ID PTOT STF10NK50Z 500 V < 0.7 Ω 9A 30 W • Extremely high dv/dt capability ■ 100% avalanche tested


    Original     		PDF STF10NK50Z O-220FP O-220FP f10nk50z f10nk f10nk50 STF10NK F10N STF10NK50Z

    STL70N

    Abstract: powerflat 5x6 70N4 70N4L
    Text: STL70N4LLF5 N-channel 40 V, 0.0061 Ω, 18 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS RDS on max ID STL70N4LLF5 40 V 0.0067 Ω 18 A (1) 1. The value is rated according to Rthj-pcb 1 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		PDF STL70N4LLF5 STL70N4LLF5 STL70N powerflat 5x6 70N4 70N4L

    130NF20D

    Abstract: TH 2190 mosfet TH 2190 mosfet isolated STY130NF20D th 2190
    Text: STY130NF20D N-channel 200 V, 0.010 Ω, 130 A, Max247 STripFET II with fast recovery diode Power MOSFET Preliminary data Features Type VDSS RDS on max ID STY130NF20D 200 V < 0.012 Ω 130 A • Exceptional dv/dt capability ■ 100% avalanche tested ■


    Original     		PDF STY130NF20D Max247 130NF20D TH 2190 mosfet TH 2190 mosfet isolated STY130NF20D th 2190

    Untitled

    Abstract: No abstract text available
    Text: ESDAXLC6-1MY2 Extra low capacitance single line transient voltage surge suppressor TVS Datasheet - production data Complies with the following standards • IEC 61000-4-2 level 4 • MIL STD 883G-Method 3015-7: class 3B Applications Where transient over voltage protection and


    Original     		PDF 883G-Method DocID16923

    stF5N60M

    Abstract: 5N60M
    Text: STF5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features Order code VDS @ TJmax RDS on max ID STF5N60M2 650 V 1.4 Ω 3.7 A • Extremely low gate charge 1 2 • Lower RDS(on) x area vs previous generation


    Original     		PDF STF5N60M2 O-220FP O-220FP DocID025320 stF5N60M 5N60M

    Untitled

    Abstract: No abstract text available
    Text: STPS2545CT-Y Automotive power Schottky rectifier Datasheet − production data Features A1 • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified


    Original     		PDF STPS2545CT-Y AEC-Q101 O-220AB

    W12NK90Z

    Abstract: STW12NK90Z W12NK w12nk90 NC 9615
    Text: STW12NK90Z N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH Power MOSFET Features Order code VDSS RDS on max STW12NK90Z 900 V < 0.88 Ω ID Pw 11 A 230 W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized


    Original     		PDF STW12NK90Z O-247 W12NK90Z STW12NK90Z W12NK w12nk90 NC 9615

    STN3N40K3

    Abstract: 3n40k stn3n40k 29-Jun-2010 P008
    Text: STN3N40K3 N-channel 400 V, 3 Ω, 1.8 A SOT-223 SuperMESH3 Power MOSFET Features Order code VDSS RDS on max ID PW STN3N40K3 400 V < 3.4 Ω 1.8 A 3.3 W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance


    Original     		PDF STN3N40K3 OT-223 OT-223 STN3N40K3 3n40k stn3n40k 29-Jun-2010 P008

    1N5908 diode

    Abstract: 1N5908 CB429 SM5908 STMicroelectronics DIODE marking code smc diode marking ed STMicroelectronics smc marking code
    Text: 1N5908 SM5908 TRANSILTM FEATURES UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 1500 W 10/1000µs REVERSE STAND OFF VOLTAGE : 5 V LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION The 1N5908 and SM5908 are dedicated to the 5 V logic circuit protection (TTL and CMOS technologies).


    Original     		PDF 1N5908 SM5908 1N5908 SM5908 CB429 1N5908 diode CB429 STMicroelectronics DIODE marking code smc diode marking ed STMicroelectronics smc marking code

    Untitled

    Abstract: No abstract text available
    Text: STU3N45K3 N-channel 450 V - 3.3 Ω typ., 1.8 A Zener-protected SuperMESH3 Power MOSFET in a IPAK package Datasheet - production data Features TAB Order code VDSS RDS on max ID Pw STU3N45K3 450 V <4Ω 1.8 A 27 W • 100% avalanche tested 3 2 1 • Extremely high dv/dt capability


    Original     		PDF STU3N45K3 AM01476v1 DocID17206

    Untitled

    Abstract: No abstract text available
    Text: STQ3N45K3-AP N-channel 450 V - 3.3 Ω typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a TO-92 package Datasheet - production data Features 1 2 3 Order code VDSS RDS on max STQ3N45K3-AP 450 V <4Ω ID Pw 0.6 A 3 W • 100% avalanche tested • Extremely high dv/dt capability


    Original     		PDF STQ3N45K3-AP AM01476v1 DocID024887

    STY112

    Abstract: 112N65 STY112N65M5
    Text: STY112N65M5 N-channel 650 V, 0.019 Ω, 96 A, MDmesh V Power MOSFET in Max247 package Datasheet — production data Features Order code VDSS @TjMAX RDS on max ID STY112N65M5 710 V < 0.022 Ω 96 A • Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance


    Original     		PDF STY112N65M5 Max247 Max247 STY112 112N65 STY112N65M5

    Untitled

    Abstract: No abstract text available
    Text: STL4P3LLH6 P-channel 30 V, 0.04 Ω typ., 4 A STripFET VI DeepGATE™ Power MOSFET in PowerFLAT 2x2 package Datasheet - preliminary data Features 1 2 3 5 2 4 3 VDSS RDS on max. ID STL4P3LLH6 30 V 0.06 Ω at 10 V 4A • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on)


    Original     		PDF DocID024616

    Untitled

    Abstract: No abstract text available
    Text: STL150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS STL150N3LLH5 30 V RDS on max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb 1 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		PDF STL150N3LLH5 STL150N3LLH5

    Untitled

    Abstract: No abstract text available
    Text: STL6P2UH7 P-channel 20 V, 0.023 Ω typ., 6 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet − target specification Features 1 2 Order code VDS RDS on max ID STL6P2UH7 20 V 0.029 Ω @ 4.5 V 6A 3 • Extremely low on-resistance RDS(on)


    Original     		PDF AM11269v1 DocID024979

    Untitled

    Abstract: No abstract text available
    Text: STS5P3LLH6 P-Channel 30 V, 0.04 Ω typ., 5 A STripFET VI DeepGATE™ Power MOSFET in SO-8 package Datasheet - preliminary data Features Order code VDS STS5P3LLH6 30 V RDS on max ID 0.06 Ω at 10 V 5 A • RDS(on)* Qg industry benchmark • Extremely low on-resistance RDS(on)


    Original     		PDF DocID024614

    PowerFLAT

    Abstract: PS-1045 ps1045
    Text: STPS1045DEE Power Schottky rectifier Datasheet  production data Features NC • Very low conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capacity specified ■ High junction temperature


    Original     		PDF STPS1045DEE STPS1045DEE-Td PowerFLAT PS-1045 ps1045

    Untitled

    Abstract: No abstract text available
    Text: STPS8L30DEE Power Schottky rectifier Datasheet  production data Features NC • Very low conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capacity specified ■ High junction temperature


    Original     		PDF STPS8L30DEE STPS8L30DEE-Td

    marking sm DO-214AA

    Abstract: No abstract text available
    Text: SMLVT3V3 LOW VOLTAGE TRANSILTM FEATURES • ■ ■ ■ ■ ■ UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 600 W 10/1000µs REVERSE STAND-OFF VOLTAGE = 3.3 V LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION The SMLVT3V3 is a Transil diode designed


    Original     		PDF DO-214AA) marking sm DO-214AA

    Untitled

    Abstract: No abstract text available
    Text: STB33N60M2 N-channel 600 V, 0.090 Ω typ., 26 A MDmesh II Plus low Qg Power MOSFETs in a D2PAK package Datasheet - preliminary data Features TAB Order code VDS @ TJmax RDS on max ID STB33N60M2 650 V 0.120 Ω 27 A • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation


    Original     		PDF STB33N60M2 AM15572v1 DocID025253

    stps61170cw

    Abstract: STPS61170C JESD97 D0135
    Text: STPS61170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 30 A VRRM 170 V Tj 175 °C VF(max) 0.67 V A1 K A2 FEATURES AND BENEFITS • ■ ■ ■ ■ ■ High junction temperature capability Low leakage current Good trade off between leakage current and


    Original     		PDF STPS61170C O-247 STPS61170CW O-247, stps61170cw STPS61170C JESD97 D0135

    60n3

    Abstract: STD60N3LH5
    Text: STD60N3LH5 N-channel 30 V, 0.0072 Ω typ., 48 A STripFET V Power MOSFET in a DPAK package Datasheet - not recommended for new design Features Order code VDS @ Tjmax RDS on max STD60N3LH5 TAB 35 V ID 0.008 Ω 48 A • RDS(on) * Qg industry benchmark 3 • Extremely low on-resistance RDS(on)


    Original     		PDF STD60N3LH5 DocID14079 60n3 STD60N3LH5

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . EMIF01-5250SC5 Application Specific Discretes A.S.D. FILTER WITH ESD PROTECTION MAIN APPLICATIONS Where EMI filtering in ESD sensitive equipment is required : • Mobile phone : handsets and accessories ■ RF communications DESCRIPTION The EMIF01-5250SC5 is a highly integrated T-filter


    OCR Scan     		PDF EMIF01-5250SC5 EMIF01-5250SC5 OT23-5L SC-59A)