STK16N10L
Abstract: STK16N10
Text: STK16N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STK16N10L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.12 Ω 16 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STK16N10L
100oC
175oC
OT-82
OT-194
STK16N10L
STK16N10
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Untitled
Abstract: No abstract text available
Text: STK16N10L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)15 I(D) Max. (A)16# I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)64 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)65# Minimum Operating Temp (øC)
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STK16N10L
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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STP8N10L
Abstract: STK12N STLT20 STLT20FI
Text: SELECTION GUIDE - LOGIC: LEVEL V BR DSS (V ) f*D S (o n )^ 0 max Id (A) Type Package max (pF) 1500 1500 1500 400 • 400. 829 829 543 65 7.00 10.00 10.00 4.00 • 4 .0 0 » Ptot 60 110 35 45 (W) (11) Page 571 SOT-82 STK16N10L 16.0 TO-220 ISOW220 SOT-82 STP20N10L
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OT-82
O-220
ISOW220
1SOW220
ISOW22Û
STP8N10L
STK12N
STLT20
STLT20FI
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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16N10L
Abstract: A4032
Text: f Z T SGS-THOMSON ^ 7# STK 16N10L N - CHANNEL EN H A N C EM EN T MODE _ LOW TH R ESH O LD PO W ER MOS TR AN SISTO R PRELIMINARY DATA TYPE V S TK16N 10L dss 1 00 V R dS oii Id 0 .1 2 O 16 A . AVALAN C H E RUG G EDN ESS TECHNO LO G Y . 100% AVALAN C H E TESTED
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16N10L
TK16N
OT-82
OT-194
STK16N10L
A4032
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Untitled
Abstract: No abstract text available
Text: • _ 7^237 Q G 4 b D tlb 233 ■ SGTH r i 7 S G S - T H O M S O N Ä 7# [* ^ o m i(g T O « S _ S TK 16N 10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TK16N 10L ■ ■ . ■ . ■ ■ . . V d ss R D S(on
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TK16N
STK16N10L
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TSD45N50V
Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000
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STP30N05
BUZ11A
STP25N05
BUZ10
STLT29
BUZ71
IRFZ20
BUZ71A
STP17N
STLT19
TSD45N50V
TSD40N55V
TSD33N50V
TSD23N50V
TSD30N60V
TSD180N10V
TSD160N05V
TSD14N100V
TSD4M450V
TSD22N80V
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