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    STMicroelectronics

    STMicroelectronics STGWT30H65FB

    IGBT TRENCH FS 650V 30A TO-3P
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    STGWT30H65FB Datasheets (1)

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    STGWT30H65FB STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 30A 260W TO3PL Original PDF

    STGWT30H65FB Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current • VCE sat = 1.55 V (typ.) @ IC = 30 A


    Original     		STGW30H65FB, STGWT30H65FB O-247 DocID025849 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data Features TAB • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current 3 2 • VCE sat = 1.55 V (typ.) @ IC = 30 A


    Original     		STGFW30H65FB, STGW30H65FB, STGWT30H65FB O-247 DocID025849 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data Features TAB • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current 3 2 • VCE sat = 1.55 V (typ.) @ IC = 30 A


    Original     		STGFW30H65FB, STGW30H65FB, STGWT30H65FB O-247 DocID025849 PDF