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    STEP DOWN TRANSFORMER FOOTPRINT Search Results

    STEP DOWN TRANSFORMER FOOTPRINT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67S580FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=1.6 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S581FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S539FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=2/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67S141AFTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=84/Iout(A)=3/Phase Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67S149AFTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=84/Iout(A)=3/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation

    STEP DOWN TRANSFORMER FOOTPRINT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    step down transformer

    Abstract: step down transformer 12 MABA-011002 step down transformer footprint
    Text: MABA-011002 4:1 Step Down Transformer 5 - 200 MHz Rev. V1 Features • Surface Mount  4:1 Step Down Transformer  Excellent performance under DC bias current, even when current flows is imbalanced out outputs  260°C Reflow Compatible  RoHS* Compliant, lead free


    Original     		PDF MABA-011002 step down transformer step down transformer 12 MABA-011002 step down transformer footprint

    PS2811-1-M

    Abstract: RLF7030T-2R2M5R4 zener 8.2V vishay resistor 0603 1 0.1W MMBT6429LT1G ser2010-122mx Z4 SOT23 AN2043 PS2811-1M tdk Isolators
    Text: National Semiconductor Application Note 2043 Ajay Hari March 18, 2010 Introduction LO modulating power switches with independent pulse width timing. The main difference between the topologies are, the Half Bridge topology employs a transformer to provide input / output ground isolation and a step down or step up


    Original     		PDF AN-2043 PS2811-1-M RLF7030T-2R2M5R4 zener 8.2V vishay resistor 0603 1 0.1W MMBT6429LT1G ser2010-122mx Z4 SOT23 AN2043 PS2811-1M tdk Isolators

    TDK C1608COG

    Abstract: C1608COG RLF7030T-2R2M5R4 1H682J AN1755 48V 100W zener diode BAT54BRW C2012X7R1C225K P8208 1E223
    Text: National Semiconductor Application Note 1755 Steve Schulte January 15, 2008 Introduction LO modulating power switches with independent pulse width timing. The main difference between the topologies are, the Half Bridge topology employs a transformer to provide input / output ground isolation and a step down or step up


    Original     		PDF AN-1755 TDK C1608COG C1608COG RLF7030T-2R2M5R4 1H682J AN1755 48V 100W zener diode BAT54BRW C2012X7R1C225K P8208 1E223

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Sampling Phase Detectors SPD1101-111, SPD1102-111, SPD1103-111 Features • For Phase Locked VCOs to 22 GHz ■ Reference Frequencies Below 50 MHz ■ New Surface Mount Package Design ■ Small Footprint 90 x 110 Mils ■ Automated Chip on Board Construction


    Original     		PDF SPD1101-111, SPD1102-111, SPD1103-111 SPD1101-111 9/01A

    Microwave detector diodes

    Abstract: step recovery diode Sampling Phase Detectors step down transformer footprint "step recovery diode" 1.7 pf step down transformer SPD1102-111 Microwave detector diodes 18 GHz SP*D1100 SPD1101
    Text: Preliminary Sampling Phase Detectors SPD1101-111, SPD1102-111, SPD1103-111 Features • For Phase Locked VCOs to 22 GHz ■ Reference Frequencies Below 50 MHz ■ New Surface Mount Package Design ■ Small Footprint 90 x 110 Mils ■ Automated Chip on Board Construction


    Original     		PDF SPD1101-111, SPD1102-111, SPD1103-111 SPD1101-111 9/01A Microwave detector diodes step recovery diode Sampling Phase Detectors step down transformer footprint "step recovery diode" 1.7 pf step down transformer SPD1102-111 Microwave detector diodes 18 GHz SP*D1100 SPD1101

    Sampling Phase Detectors

    Abstract: 27 mhz oscillator
    Text: DETECTORS DATA SHEET SPD1101-111, SPD1102-111, SPD1103-111: Sampling Phase Detectors Features Schematic Diagram For phase locked VCOs to 22 GHz ● Reference frequencies below 50 MHz ● New surface mount package design ● Small footprint 90 x 110 mils


    Original     		PDF SPD1101-111, SPD1102-111, SPD1103-111: SPD1102-111 SPD1103-111, Sampling Phase Detectors 27 mhz oscillator

    smd diode marking sG

    Abstract: smd marking m4 smd fuse marking 20 VTM 48 D496 D505 V048F320M009 V048F320T009
    Text: V048F320T009 V048F320M009 VTM VTMTM Transformer • 48 V to 32 V V•I ChipTM Converter • 125°C operation TJ • 9.4 A (14.1 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2


    Original     		PDF V048F320T009 V048F320M009 V048F320T009 smd diode marking sG smd marking m4 smd fuse marking 20 VTM 48 D496 D505 V048F320M009

    smd marking m4

    Abstract: smd diode marking sG VTM 48 D496 D505 V048F015T100
    Text: V048F015T100 V048F015M100 VTM VTMTM Transformer • 48 V to 1.5 V V•I ChipTM Converter • 125°C operation TJ • 100.0 A (150.0 A for 1 ms) • 1 µs transient response • High density – 339 A/in3 • 3.5 million hours MTBF • Small footprint – 80 A/in2


    Original     		PDF V048F015T100 V048F015M100 V048F015T100 smd marking m4 smd diode marking sG VTM 48 D496 D505

    VTM 48

    Abstract: D496 D505 V048F040M050 V048F040T050
    Text: V048F040T050 V048F040M050 VTM VTMTM Transformer • 48 V to 4 V V•I ChipTM Converter • 125°C operation TJ • 50 A (75.0 A for 1 ms) • 1 µs transient response • High density – 169 A/in3 • 3.5 million hours MTBF • Small footprint – 40 A/in2


    Original     		PDF V048F040T050 V048F040M050 V048F040T050 VTM 48 D496 D505 V048F040M050

    Untitled

    Abstract: No abstract text available
    Text: V048F080T030 V048F080M030 VTM VTMTM Transformer • 48 V to 8 V V•I ChipTM Converter • 125°C operation TJ • 30 A (45.0 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2


    Original     		PDF V048F080T030 V048F080M030 V048F080T030

    Untitled

    Abstract: No abstract text available
    Text: V048F160T015 V048F160M015 VTM VTMTM Transformer • 48 V to 16 V V•I ChipTM Converter • 125°C operation TJ • 15 A (22.5 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2


    Original     		PDF V048F160T015 V048F160M015 V048F160T015

    TRANSFORMER 6200

    Abstract: D496 D505 V048F240T012
    Text: V048F240T012 V048F240M012 VTM VTMTM Transformer • 48 V to 24 V V•I ChipTM Converter • 125°C operation TJ • 12.5 A (18.8 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2


    Original     		PDF V048F240T012 V048F240M012 V048F240T012 TRANSFORMER 6200 D496 D505

    smd marking m4

    Abstract: VTM 48 D496 D505 V048F096M025 V048F096T025
    Text: V048F096T025 V048F096M025 VTM VTMTM Transformer • 48 V to 9.6 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2


    Original     		PDF V048F096T025 V048F096M025 V048F096T025 smd marking m4 VTM 48 D496 D505 V048F096M025

    mS25a

    Abstract: ic sc 6200 D496 D505 V048F120M025 V048F120T025 chip transformer
    Text: V048F120T025 V048F120M025 VTM VTMTM Transformer • 48 V to 12 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2


    Original     		PDF V048F120T025 V048F120M025 V048F120T025 mS25a ic sc 6200 D496 D505 V048F120M025 chip transformer

    Untitled

    Abstract: No abstract text available
    Text: V048F096T025 V048F096M025 VTM VTMTM Transformer • 48 V to 9.6 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2


    Original     		PDF V048F096T025 V048F096M025 V048F096T025

    Untitled

    Abstract: No abstract text available
    Text: V048F015T100 V048F015M100 VTM VTMTM Transformer • 48 V to 1.5 V V•I ChipTM Converter • 125°C operation TJ • 100.0 A (150.0 A for 1 ms) • 1 µs transient response • High density – 339 A/in3 • 3.5 million hours MTBF • Small footprint – 80 A/in2


    Original     		PDF V048F015T100 V048F015M100 V048F015T100

    Untitled

    Abstract: No abstract text available
    Text: V048F040T050 V048F040M050 VTM VTMTM Transformer • 48 V to 4 V V•I ChipTM Converter • 125°C operation TJ • 50 A (75.0 A for 1 ms) • 1 µs transient response • High density – 169 A/in3 • 3.5 million hours MTBF • Small footprint – 40 A/in2


    Original     		PDF V048F040T050 V048F040M050 V048F040T050

    Untitled

    Abstract: No abstract text available
    Text: V048F020T080 V048F020M080 VTM VTMTM Transformer • 48 V to 2 V V•I ChipTM Converter • 125°C operation TJ • 80.0 A (120.0 A for 1 ms) • 1 µs transient response • High density – 271 A/in3 • 3.5 million hours MTBF • Small footprint – 70 A/in2


    Original     		PDF V048F020T080 V048F020M080 V048F020T080

    VTM 48

    Abstract: D496 D505 V048F020T080
    Text: V048F020T080 V048F020M080 VTM VTMTM Transformer • 48 V to 2 V V•I ChipTM Converter • 125°C operation TJ • 80.0 A (120.0 A for 1 ms) • 1 µs transient response • High density – 271 A/in3 • 3.5 million hours MTBF • Small footprint – 70 A/in2


    Original     		PDF V048F020T080 V048F020M080 V048F020T080 VTM 48 D496 D505

    smd marking m4

    Abstract: smd diode marking sG VTM 48 D496 D505 V048F160M015 V048F160T015
    Text: V048F160T015 V048F160M015 VTM VTMTM Transformer • 48 V to 16 V V•I ChipTM Converter • 125°C operation TJ • 15 A (22.5 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2


    Original     		PDF V048F160T015 V048F160M015 V048F160T015 smd marking m4 smd diode marking sG VTM 48 D496 D505 V048F160M015

    smd marking m4

    Abstract: smd fuse marking 20 VTM 48 D496 D505
    Text: V048F080T030 V048F080M030 VTM VTMTM Transformer • 48 V to 8 V V•I ChipTM Converter • 125°C operation TJ • 30 A (45.0 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2


    Original     		PDF V048F080T030 V048F080M030 V048F080T030 smd marking m4 smd fuse marking 20 VTM 48 D496 D505

    Untitled

    Abstract: No abstract text available
    Text: V048F120T025 V048F120M025 VTM VTMTM Transformer • 48 V to 12 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2


    Original     		PDF V048F120T025 V048F120M025 V048F120T025

    Untitled

    Abstract: No abstract text available
    Text: V048F320T009 V048F320M009 VTM VTMTM Transformer • 48 V to 32 V V•I ChipTM Converter • 125°C operation TJ • 9.4 A (14.1 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2


    Original     		PDF V048F320T009 V048F320M009 V048F320T009

    Untitled

    Abstract: No abstract text available
    Text: V048F060T040 V048F060M040 VTM VTMTM Transformer • 48 V to 6 V V•I ChipTM Converter • 125°C operation TJ • 40 A (60.0 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2


    Original     		PDF V048F060T040 V048F060M040 V048F060T040