STDL150 Search Results

STDL150 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
STDL150		Samsung Electronics	STDL150 Supply Voltage (V) = 1.5 Technology(micron) = 0.13micron		Original	PDF

STDL150 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ternary content addressable memory VHDL Abstract: ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge Text: V S MSUNG STDL150 ELECTRONICS STDL150 Standard Cell 0.13um System-On-Chip ASIC March 2003, V2.0 Features Analog cores - Ldrawn = 0.13um 1.5/2.5/3.3V Device 1.5/2.5/3.3V - Up to 45.8 million gates Interface - Power dissipation: 13nW/MHz@1.5V, 2SL, ND2 5.0V	Original	PDF	STDL150 STDL150 13nW/MHz ARM920T/ARM940T, ternary content addressable memory VHDL ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	PDF	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

Catalog Datasheet

MFG & Type

PDF

Document Tags

ternary content addressable memory VHDL

Abstract: ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge
Text: V S MSUNG STDL150 ELECTRONICS STDL150 Standard Cell 0.13um System-On-Chip ASIC March 2003, V2.0 Features Analog cores - Ldrawn = 0.13um 1.5/2.5/3.3V Device 1.5/2.5/3.3V - Up to 45.8 million gates Interface - Power dissipation: 13nW/MHz@1.5V, 2SL, ND2 5.0V

Original

PDF

STDL150 STDL150 13nW/MHz ARM920T/ARM940T, ternary content addressable memory VHDL ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

Original

PDF

BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B