STDH150 ANALOG CORE Search Results

STDH150 ANALOG CORE Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
ANALOGPRGBKCN		Texas Instruments	The Analog Engineer's Pocket Reference (Simplified Chinese edition)
ANALOGPRGBOOK		Texas Instruments	The Analog Engineer's Pocket Reference covers precision signal chain topics
TLP7920		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Isolation Amplifier), Analog output, 5000 Vrms, DIP8
TLP7820		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Isolation Amplifier), Analog output, 5000 Vrms, SO8L(LF4)
74HC4053FT		Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC

STDH150 ANALOG CORE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ARM9TDMI Abstract: ARM1020E samsung hdd Samsung S ARM teaklite DSPG SMART ASIC bga ARM920t datasheet Avant Electronics USB samsung Text: V S MSUNG STDH150 ELECTRONICS STDH150 Standard Cell 0.13um System-On-Chip ASIC Dec 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 34.3 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2	Original	STDH150 STDH150 ARM920T/ARM940T, ARM9TDMI ARM1020E samsung hdd Samsung S ARM teaklite DSPG SMART ASIC bga ARM920t datasheet Avant Electronics USB samsung	PDF
4583 dual schmitt trigger Abstract: verilog code for UART with BIST capability transistor sk 3562 VIA Apollo Design Guide of AT 89551 oa31 diode schematic diagram ac-dc inverter circuit of samsung CRT soc 1044 tl 8709 p Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2	Original	STDH150 4583 dual schmitt trigger verilog code for UART with BIST capability transistor sk 3562 VIA Apollo Design Guide of AT 89551 oa31 diode schematic diagram ac-dc inverter circuit of samsung CRT soc 1044 tl 8709 p	PDF
ha 1452 Amplifiers Abstract: 8-669 0.13um standard cell library ARM9TDMI kt 714 vhdl coding for analog to digital converter AO211 KT 829 KT 829 b samsung LVDS 30 PIN Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2	Original	STDH150 ha 1452 Amplifiers 8-669 0.13um standard cell library ARM9TDMI kt 714 vhdl coding for analog to digital converter AO211 KT 829 KT 829 b samsung LVDS 30 PIN	PDF
CL1101 Abstract: CL1502 610 108 001 PHSOSCK17/M16/M26/M36 SL 100 power transistor sl 100 transistor YN 2 SL 220 CL117 CL166 PHSOSCK17 Text: INPUT CLOCK DRIVERS Cell List Cell Name Function Description PMSCKDC 2/4/6/8 2.5V CMOS Level Input Clock Driver PMSCKDCD(2/4/6/8) 2.5V CMOS Level Input Clock Driver with Pull-Down PMSCKDCU(2/4/6/8) 2.5V CMOS Level Input Clock Driver with Pull-Up PMSCKDS(2/4/6/8)	Original	STDH150 CL1101 CL1502 610 108 001 PHSOSCK17/M16/M26/M36 SL 100 power transistor sl 100 transistor YN 2 SL 220 CL117 CL166 PHSOSCK17	PDF
3.3v to 5v buffer latch Abstract: voltage buffer 12v B12 diode buffer low capacitance buffer 3.3v to 5v latch STDH150 Text: Electrical Characteristics 2 Contents DC Electrical Characteristics . 2-1 ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS The following tables define the DC electrical characteristics for the standard LVCMOS I/O buffers	Original	STDH150 3.3v to 5v buffer latch voltage buffer 12v B12 diode buffer low capacitance buffer 3.3v to 5v latch STDH150	PDF
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B	PDF