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    STD3N25 Search Results

    STD3N25 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STD3N25 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD3N25 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD3N25-1 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STD3N25T4 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STD3N25T4 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF

    STD3N25 Datasheets Context Search

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    STD3N25

    Abstract: No abstract text available
    Text: STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N25 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 250 V <2Ω 3A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF STD3N25 100oC O-251) O-252) STD3N25

    schematic diagram Electronic Ballast 236

    Abstract: STD3N25
    Text: STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N25 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 250 V < 2Ω 3A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF STD3N25 100oC O-251) O-252) schematic diagram Electronic Ballast 236 STD3N25

    3l4 diode

    Abstract: No abstract text available
    Text: r Z ^ 7 Z S G S - T H O M S O N # M G IF ä < m [i< m @ R !]D S S T D 3 N 2 5 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss R d S o ii 250 V STD3N25 Id <2 0. 3 A • . . . . TYPICAL R ds(oii) = 1 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STD3N25 O-251) O-252) O-251 O-252 0068772-B 3l4 diode