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STC6614 Abstract: No abstract text available Text: STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A DESCRIPTION The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance	Original	STC6614 STC6614 -60V/-5	PDF

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STC6614

Abstract: No abstract text available
Text: STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A DESCRIPTION The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

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STC6614 STC6614 -60V/-5

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