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    STB6LNC60 Search Results

    STB6LNC60 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STB6LNC60 STMicroelectronics N-Channel 600 V - 1 ohm - 5.8 A D2PAK PowerMeshII MOSFET Original PDF
    STB6LNC60 STMicroelectronics N-CHANNEL 600V 1 ? 5.8A D2PAK POWERMESH II MOSFET Original PDF
    STB6LNC60T4 STMicroelectronics N-Channel 600 V - 1 ohm - 5.8 A D2PAK PowerMeshII MOSFET Original PDF

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    STB6LNC60

    Abstract: No abstract text available
    Text: STB6LNC60 N-CHANNEL 600V - 1Ω - 5.8A D2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB6LNC60 600 V < 1.25 Ω 5.8 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF STB6LNC60 STB6LNC60

    STB6LNC60

    Abstract: No abstract text available
    Text: STB6LNC60 N-CHANNEL 600V - 1Ω - 5.8A D2PAK PowerMesh II MOSFET TYPE STB6LNC60 • ■ ■ ■ ■ VDSS RDS on ID 600 V < 1.25 Ω 5.8 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF STB6LNC60 STB6LNC60

    STB6LNC60

    Abstract: No abstract text available
    Text: STB6LNC60 N-CHANNEL 600V - 1Ω - 5.8A D2PAK PowerMesh II MOSFET TYPE STB6LNC60 • ■ ■ ■ ■ VDSS RDS on ID 600 V < 1.25 Ω 5.8 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF STB6LNC60 STB6LNC60