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    STB5NA80 Search Results

    STB5NA80 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STB5NA80 STMicroelectronics N - Channel Enhancement Mode Power MOS Transistor Original PDF
    STB5NA80 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STB5NA80-1 STMicroelectronics N - Channel Enhancement Mode Power MOS Transistor Original PDF
    STB5NA80T4 STMicroelectronics N - Channel Enhancement Mode Power MOS Transistor Original PDF

    STB5NA80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STB5NA80

    Abstract: D2PACK
    Text: STB5NA80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STB5NA80 800 V < 2.4 Ω 4.7 A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.8 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STB5NA80 100oC O-262) O-263) O-262 STB5NA80 D2PACK

    B5NA80

    Abstract: 0053D STB5NA80 b5na
    Text: STB5NA80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B5NA80 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V < 2.4 Ω 4.7 A TYPICAL RDS(on) = 1.8 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STB5NA80 B5NA80 100oC O-262) O-263) O-262 B5NA80 0053D STB5NA80 b5na

    Untitled

    Abstract: No abstract text available
    Text: * 7/ SGS-THOMSON ilLiCTWDe STB5NA80 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB5NA80 V dss RDS on Id 800 V < 2.4 Í2 4.7 A . . . . . . . TYPICAL RDs(on) =1.8 ft AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STB5NA80 O-262) O-263) O-263