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    STATIC RAM FUJITSU Search Results

    STATIC RAM FUJITSU Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    6167LA100DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167LA70DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation

    STATIC RAM FUJITSU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    63 ball fbga thermal resistance spansion

    Abstract: S29AL S29AL016M S71AL016M S71AL016M40 spansion solder profile
    Text: S71AL016M Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 16 Megabit (1 M x 16-bit) CMOS 3.0 Volt-only Flash Memory and 4 Megabit (256K x 16-bit) Static RAM/ Pseudo Static RAM ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S71AL016M 16-bit) S71AL016M 63 ball fbga thermal resistance spansion S29AL S29AL016M S71AL016M40 spansion solder profile

    sram 256mb 64X

    Abstract: S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL-J S71PL256N S71PL127J
    Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM


    Original     		PDF S71PL-J 256M/128/64/32 16/8/4/2M 16-bit) 4M/2M/1M/512K/256K sram 256mb 64X S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL256N S71PL127J

    Mcp90

    Abstract: MCP78 032J mcp68
    Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM


    Original     		PDF S71PL254/127/064/032J 16-bit) 4M/2M/1M/512K/256K S71PL S29PL Mcp90 MCP78 032J mcp68

    6116 RAM

    Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
    Text: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS


    Original     		PDF 2048x8 450ns 10-100mA CY7C128 IDT6116A V61C16 VT20C19 CXK5814P TC2018 MCM2018A 6116 RAM ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128

    diode F4 3J

    Abstract: S29GL016A S29GL064A S29GL-A S71GL016A
    Text: S71GL016A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM, 16 Megabit (1 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 4 Megabit (256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S71GL016A 16-bit) diode F4 3J S29GL016A S29GL064A S29GL-A

    4kw marking

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance


    Original     		PDF MB84VD22280FE-70/MB84VD22290FE-70 59-ball MB84VD22280FE/MB84VD22290FE 4kw marking

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    MARKING HRA

    Abstract: 4kw marking
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 4M (×8/×16) STATIC RAM MB84VD2118XEM-70/MB84VD2119XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance


    Original     		PDF MB84VD2118XEM-70/MB84VD2119XEM-70 56-ball MB84VD2118XEM/MB84VD2119XEM MARKING HRA 4kw marking

    MARKING HRA

    Abstract: SEC MCP 4kw marking
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM MB84VD2108XEM-70/MB84VD2109XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance


    Original     		PDF MB84VD2108XEM-70/MB84VD2109XEM-70 56-ball MB84VD2108XEM/MB84VD2109XEM MARKING HRA SEC MCP 4kw marking

    MARKING HRA

    Abstract: 4kw marking diode F4 4e
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 4Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ064G-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V


    Original     		PDF MB84VZ064G-70 107-ball MARKING HRA 4kw marking diode F4 4e

    4kw marking

    Abstract: marking code 4e
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.5E 4Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ064D-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V


    Original     		PDF MB84VZ064D-70 107-ball 4kw marking marking code 4e

    1SA35

    Abstract: 4kw marking SGA17 sa6210
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50230-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD22184FM-70/MB84VD22194FM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance


    Original     		PDF DS05-50230-2E MB84VD22184FM-70/MB84VD22194FM-70 56-ball VD22184FM VD22194FM F0311 1SA35 4kw marking SGA17 sa6210

    MARKING HRA

    Abstract: 4kw marking MARKING SA70
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.8E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD22180FA-70/MB84VD22190FA-70 MB84VD22180FM-70/MB84VD22190FM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V


    Original     		PDF MB84VD22180FA-70/MB84VD22190FA-70 MB84VD22180FM-70/MB84VD22190FM-70 59-ball 84VD22180FA/VD22190FA/VD22180FM/VD22190FM MARKING HRA 4kw marking MARKING SA70

    4kw marking

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50229-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD22181FM-70/MB84VD22191FM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance


    Original     		PDF DS05-50229-2E MB84VD22181FM-70/MB84VD22191FM-70 56-ball MB84VD22181FM/VD22191FM F0311 4kw marking

    DS05-50205-1E

    Abstract: MB84VD2208XEA SA70
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50205-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2208XEA-90/MB84VD2209XEA-90 • FEATURES • Power supply voltage of 2.7 to 3.3V • High performance


    Original     		PDF DS05-50205-1E MB84VD2208XEA-90/MB84VD2209XEA-90 73-ball BGA-73P-M01) MB84VDatives DS05-50205-1E MB84VD2208XEA SA70

    Untitled

    Abstract: No abstract text available
    Text: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C1002 is CMOS fully decoded dynamic RAM organized as 1,048,576 words x 1


    OCR Scan     		PDF MB81C1002-70/-80/-10/-12 MB81C1002 theMB81C1002 26-LEAD SOJ-26) LCC-26P-M04) C26054S-1C MB81C1002-70

    Untitled

    Abstract: No abstract text available
    Text: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C4258-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C4258 is CMOS fully decocted dynamic RAM organized as 262,144 words x 4


    OCR Scan     		PDF MB81C4258-70/-80/-10/-12 MB81C4258 MB81C4258 adJ-26) LCC-26P-M C26054S-1C MB81C4258-70 MB81C4258-80 MB81C4258-10

    Untitled

    Abstract: No abstract text available
    Text: October 1989 Edition 1.0 FUJITSU DATA S H EE T MB81C4258A-60/-80/-10 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C4258A is CMOS fully decoded dynamic RAM organized as 262,144 words x 4


    OCR Scan     		PDF MB81C4258A-60/-80/-10 MB81C4258A MB81C4258A ZIP-20P-M02

    mb818251

    Abstract: No abstract text available
    Text: August 1993 Edition 1.0 FUJITSU DATA SHEET M B 8 18 2 5 5 -70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818255 is a fully decoded dual port CMOS Dynamic RAM (DRAM) 256K words by 8 bits random access parallel port and 512 words by 8 bits Static RAM (SRAM)


    OCR Scan     		PDF MB818255 400mil 40-pin 475mil 44-pin mb818251

    TMS 3455

    Abstract: MB818251 Furukawa Electric N4140
    Text: August 1993 Edition 1.0 FUJITSU DATA S H E E T M B 8 18253-70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818253 is a fully decoded dual port CMOS Dynamic RAM (DRAM) 256K words by 8 bits random access parallel port and 512 w ords by 8 bits Static RAM (SRAM)


    OCR Scan     		PDF MB818253 400mil 40-pin 475mil 44-pin TMS 3455 MB818251 Furukawa Electric N4140

    Untitled

    Abstract: No abstract text available
    Text: M CP Multi-Chip Package FLASH M EM ORY & SRAM 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM MB84VA2102-10/MB84VA2103-io • FEATURES


    OCR Scan     		PDF MB84VA2102-10/MB84VA2103-io MB84VA2102: MB84VA2103: D-63303 F9805

    AAA1M304

    Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
    Text: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188


    OCR Scan     		PDF CY7C106 CY7C185 AS7C1028 AS7C164 AS7C259 AS7C256 AS7C1024 AAA1M304 tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A

    67FFFH

    Abstract: F9805 II1I11
    Text: MCP Multi-Chip Package FLASH MEMORY & SRAM 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM MB84VA2106-10/MB84VA2107-io • FEATURES • Power supply voltage of 2.7 to 3.6 V


    OCR Scan     		PDF II1I111111111I1I1I1I1I1IIM 11IIIIIIIIIIIIIIIIIIIIIIIIIIIIB B1I111111111111111111I MB84VA2106-10/MB84VA2107-io MB84VA2106: MB84VA2107: F9805 67FFFH F9805 II1I11

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM MB84VD2218XA-10/MB84VD2219XA-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance


    OCR Scan     		PDF 8/x16) MB84VD2218XA-10/MB84VD2219XA-10 100ns 77-ball F9903