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    STATIC RAM 2 X 8K Search Results

    STATIC RAM 2 X 8K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    6167LA100DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167LA70DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167SA55DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    8413204YA Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation

    STATIC RAM 2 X 8K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Hitachi 32k static RAM

    Abstract: CY7C192 CY7C197 CY7C199 top markings on hitachi 256k Static RAM SOJ package MSL
    Text: Cypress Semiconductor Qualification Report QTP# 99011 VERSION 1.0 April, 1999 256K Static RAM, R28 Technology, Fab 2 CY7C191/192 64K x 4 Static RAM With Separate I/O CY7C194/195/196 64K x 4 Static RAM CY7C197 256K x 1 Static RAM CY7C199 32K x 9 Static RAM


    Original     		CY7C191/192 CY7C194/195/196 CY7C197 CY7C199 CY7C192 7C192H) 28-pin, 300-mil CY7C192 CY7C0251-AC Hitachi 32k static RAM CY7C197 CY7C199 top markings on hitachi 256k Static RAM SOJ package MSL PDF

    L7C174WC-15

    Abstract: idt7174 l7c174wc15 L7C174CM20 L7C174WC25
    Text: L7C174 L7C174 DEVICES INCORPORATED 8K x 8 Cache-Tag Static RAM 8K x 8 Cache-Tag Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ❑ Low Power Operation Active: 300 mW typical at 35 ns Standby: 500 µW typical ❑ Data Retention at 2 V for Battery Backup Operation


    Original     		L7C174 MIL-STD-883, IDT7174, IDT71B74, MK48H74 28-pin 32-pin L7C174WC-15 idt7174 l7c174wc15 L7C174CM20 L7C174WC25 PDF

    L7C185

    Abstract: No abstract text available
    Text: L7C185 L7C185 DEVICES INCORPORATED 8K x 8 Static RAM Low Power 8K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION ROW SELECT 8 O ROW ADDRESS CE 1 CE 2 WE OE CONTROL as 2 V. The L7C185 and L7CL185-L consume only 30 µW and 15 µW (typical) respectively at 3 V, allowing


    Original     		L7C185 L7C185 L7C185-L L7CL185-L typi12 MIL-STD-883 PDF

    Untitled

    Abstract: No abstract text available
    Text: LOGIC DEVICES INC 2bE D • SSbSTGS OGQlQib 3 ■ 2 x 4 K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology


    OCR Scan     		CY7C183/184 48-pin 52-pin L7C183/184 L7C183 L7C184 PDF

    Untitled

    Abstract: No abstract text available
    Text: L7C183/184 2 x 4K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 20 ns worst-case □ Low Power Operation


    OCR Scan     		CY7C183/184 48-pin 52-pin L7C183/184 Z0000Z00002Z> PDF

    D467

    Abstract: No abstract text available
    Text: SEC ¿IPD46741A 8192 X 20-Bit X 2 Static BiCMOS RAM NEC Electronics Inc. Description Ordering Information The /JPD46741A is a high-performance BiCMOS static RAM organized as a 8192 x 20 bits x 2 and designed to be used as a high-speed cache memory. The ¿/PD46741A integrates two 8192 x 20-bit SRAM cores


    OCR Scan     		uPD46741A 20-Bit /PD46741ALP-12 LP-15 /JPD46741A /PD46741A 33-MHz PD46741A jtfPD46741A D467 PDF

    STK11068-30

    Abstract: STK1106
    Text: STK11C68 5IIDTEK CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM FEATURES DESCRIPTION • 2 5 ,3 0 ,3 5 and 45ns Access Times The Simtek STK11C68 is a fast static RAM 25,30,35, 45ns , with a nonvolatile electrically-erasable PROM (EEPROM) element incorporated in each static memory


    OCR Scan     		STK11C68 STK11C68 STK11068-30 STK1106 PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5168SH C M O S 64K 8K x 8 Static Ram FEATURES DESCRIPTION • 8 ,1 9 2 x 8 bit organization The LH5168SH is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (M AX.) • Low current consumption:


    OCR Scan     		LH5168SH LH5168SH 28-PIN 28-pin, 450-mil OP28-P-450) LH5168SHN 68shn PDF

    dfw11

    Abstract: No abstract text available
    Text: IDT7165S IDT7165L CMOS STATIC RAM 64K 8K x 8-BIT RESETTABLE RAM NOT RECOMMENDED FOR NEW DESIGNS <’> FEATURES: DESCRIPTION: • High-speed asynchronous RAM clear on Pin 1 (clears all RAM bits to 0, reset cycle time = 2 x tAA) • High-speed address access time


    OCR Scan     		IDT7165S IDT7165L 35/45/55ns 30/35/45ns 15/20/25ns 300mW 250mW dfw11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT7165S IDT7165L CMOS STATIC RAM 64K 8K x 8-BIT RESETTABLE RAM NOT RECOMMENDED FOR NEW DESIGNS <’> FEATURES: DESCRIPTION: • High-speed asynchronous RAM clear on Pin 1 (clears all RAM bits to 0, reset cycle time = 2 x tAA) • High-speed address access time


    OCR Scan     		/20/25ns T7165L IDT7165S/L MIL-STD-883, PDF

    L7C185NC45

    Abstract: No abstract text available
    Text: LOGIC D E V I C E S lENC ILE D • SS bST DS QGO0S7b 1 L7C185 8K x 8 Static RAM Features -r-1/6-23-/2. Description □ 8K by 8 Static RAM with chip select The L7C185 is a high-performance, low-power CMOS static RAM. The powerdown, output enable storage circuitry is organized as 8,192


    OCR Scan     		L7C185 -r-1/6-23-/2. L7C185 L7C185NC45 PDF

    HM62A168

    Abstract: 8d15 62A168
    Text: HM62A168/HM62A188 Series Prelim inary • PIN-OUT Direct M apped 8,192-Word x 16/18-Bit 2-Way 4,096-W ord x 16/18-Bit Static Cache RAM ■ DESCRIPTION T h e Hitachi H M 62 A 168 /H M 62A 1 88 is a high speed 128/144-kbit static cache RAM organized as 2-way set associative 4k x 16/18 or


    OCR Scan     		HM62A168/HM62A188 192-Word 16/18-Bit 128/144-kbit 52-pin 62A168/HM 62A188 HM62A168 8d15 62A168 PDF

    Untitled

    Abstract: No abstract text available
    Text: SI MTEK CORP b2E D m 02740fl7 QOQQi bb T33 • S IK STK10C68 S lf ilT E H CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM 2 FEATURES DESCRIPTION • • • • ■ . • • • ■ • • • The SimtekSTK10C68 is a fast static RAM 2 5 ,3 0 ,3 5 ,


    OCR Scan     		02740fl7 STK10C68 SimtekSTK10C68 STK10C68, STK10C68 PDF

    idt7165

    Abstract: 2979
    Text: IDT7165S IDT7165L CMOS STATIC RAM 64K 8K x 8-BIT RESETTABLE RAM NOT RECOMMENDED F O R N E W D E S IG N S <1> FEATURES: DESCRIPTION: • High-speed asynchronous RAM clear on Pin 1 (clears all RAM bits to 0, reset cycle time = 2 x tM ) • High-speed address access time


    OCR Scan     		35/45/55ns 30/35/45ns 15/20/25ns IDT7165S 300mW IDT71651Active: 250mW IDT7165L 28-pin, 28-pin idt7165 2979 PDF

    82385

    Abstract: TNR*G gg70 TC55187 DP1 TOS TC55187T25 tnrg TC55187T-30 al2v BS5B5
    Text: 2 -W A Y 4,096 W ORDS x 18 BITS / 8,192 W ORDS x 18 CMOS STATIC CACHE DATA RAM BITS DESCRIPTION The TC55187T is a 147,456 bits high-speed static RAM which can be user-configured either as 2-way 4,096 words by 18 bits or as 8,192 words by 18 bits. It is provided with a byte control and on-chip


    OCR Scan     		TC55187T TC55187Tâ TC55187T-25, TC55187T-30 QFJ52â 82385 TNR*G gg70 TC55187 DP1 TOS TC55187T25 tnrg TC55187T-30 al2v BS5B5 PDF

    Untitled

    Abstract: No abstract text available
    Text: STK11C68 SlfTITEK CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM FEATURES DESCRIPTION • • • • • • • • • • • • • The Simtek S T K 11C 68 is a fast static RAM 2 5 ,3 0 ,3 5 , 45ns , with a nonvolatile electrically-erasable PROM


    OCR Scan     		STK11C68 STK11C68 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C185 W CYPRESS SEMICONDUCTOR 8K x 8 Static RAM Features Functional Description • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active H IG H chip enable (CE 2).


    OCR Scan     		CY7C185 CY7C185 CY7C185-12PC CY7C185--15PC CY7C185--15VC PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL-VITELIC 4ûE D • ta3S33Tl 0 0 0 0 7 0 7 MOSEL T ■ HO MS6264A 8K x 8 High Speed CMOS Static RAM T -4 6 -2 3 -1 2 FEATURES DESCRIPTION • High spaed - 45/55 ns Max. The MOSEL MS6264A is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The


    OCR Scan     		ta3S33Tl MS6264A MS6264A S6264AL-45N P28-2 S6264AL-45P P28-1 S6264AL-45S S28-1 S6264AL-55N PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C185 CYPRESS SEMICONDUCTOR 8K x 8 Static RAM Features Functional Description • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active H IG H chip enable (CE 2 ),


    OCR Scan     		CY7C185 CY7C185 300-mil-wide CY7C185â 28-Lead 300-Mil) 28-Lead PDF

    0324H

    Abstract: No abstract text available
    Text: HM62A932 Series Preliminary 32k x 9 Data Cache RAM • DESCRIPTION The Hitachi HM62A932 is a high speed 288-kbit synchronous static cache RAM optimized for use in secondary caches fo r 3 2 -b it m icroprocessor system. This RAM has a 32-kword x 9-bit organiza­


    OCR Scan     		HM62A932 288-kbit 32-kword 32-bit 44-pin 0324H PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM56824A DSPRAM 8K x 24 Bit Fast Static RAM The M C M 56824A is a 1196,608 bit static random access memory organized as 8,192 words of 2 4 bits, fabricated using Motorola's high-performance silicongate C M O S technology. The device integrates an 8K x 2 4 SRAM core with multi­


    OCR Scan     		MCM56824A 6824A DSP56001 DSP560Q1 6824A MCM56B24AFN20 56824AFN25 56824AZP20 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS82C308 2 x 2K x 16 Cache Data RAM FEATURES DESCRIPTION • Supports 16 bit wide 80286 and 32 bit wide 80386 system cache data requirements directly. The MOSEL 82C308 is a high performance CMOS static RAM optimized for use as cache subsystem data buffers in


    OCR Scan     		MS82C308 82C308 PID004B MS82C308-35JC J44-1 MS82C308-45JC MS82C308-55JC PDF

    82C30

    Abstract: No abstract text available
    Text: MOSEL MS82C308 2 x 2K x 16 Cache Data RAM FEATURES DESCRIPTION • Supports 16 bit wide 80286 and 32 bit wide 80386 system cache data requirements directly. The MOSEL 82C308 is a high performance CMOS static RAM optimized for use as cache subsystem data buffers in


    OCR Scan     		82C307/82C327 PID004B MS82C308 MS82C308-35JC MS82C308-45JC MS82C308-55JC J44-1 82C30 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS6265 8K x 8 Slow Speed CMOS Static RAM Ultra Low Data Retention Current FEATURES DESCRIPTION • Available in 100 ns M ax. Th e M O S E L M S 6 2 6 5 is a slow speed, very low data retention current, 6 4 K bit static R A M , organized as 8 1 9 2 x


    OCR Scan     		MS6265 S6265 500mV MS6265-10NC P28-3 MS6265-10FC S28-4 MS6265-10PC P28-6 MS6265-10PI PDF