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    STATIC RAM 2 X 8K Search Results

    STATIC RAM 2 X 8K Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    6167LA100DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167LA70DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation

    STATIC RAM 2 X 8K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi 32k static RAM

    Abstract: CY7C192 CY7C197 CY7C199 top markings on hitachi 256k Static RAM SOJ package MSL
    Text: Cypress Semiconductor Qualification Report QTP# 99011 VERSION 1.0 April, 1999 256K Static RAM, R28 Technology, Fab 2 CY7C191/192 64K x 4 Static RAM With Separate I/O CY7C194/195/196 64K x 4 Static RAM CY7C197 256K x 1 Static RAM CY7C199 32K x 9 Static RAM


    Original     		PDF CY7C191/192 CY7C194/195/196 CY7C197 CY7C199 CY7C192 7C192H) 28-pin, 300-mil CY7C192 CY7C0251-AC Hitachi 32k static RAM CY7C197 CY7C199 top markings on hitachi 256k Static RAM SOJ package MSL

    L7C174WC-15

    Abstract: idt7174 l7c174wc15 L7C174CM20 L7C174WC25
    Text: L7C174 L7C174 DEVICES INCORPORATED 8K x 8 Cache-Tag Static RAM 8K x 8 Cache-Tag Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ❑ Low Power Operation Active: 300 mW typical at 35 ns Standby: 500 µW typical ❑ Data Retention at 2 V for Battery Backup Operation


    Original     		PDF L7C174 MIL-STD-883, IDT7174, IDT71B74, MK48H74 28-pin 32-pin L7C174WC-15 idt7174 l7c174wc15 L7C174CM20 L7C174WC25

    L7C185

    Abstract: No abstract text available
    Text: L7C185 L7C185 DEVICES INCORPORATED 8K x 8 Static RAM Low Power 8K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION ROW SELECT 8 O ROW ADDRESS CE 1 CE 2 WE OE CONTROL as 2 V. The L7C185 and L7CL185-L consume only 30 µW and 15 µW (typical) respectively at 3 V, allowing


    Original     		PDF L7C185 L7C185 L7C185-L L7CL185-L typi12 MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: LOGIC DEVICES INC 2bE D • SSbSTGS OGQlQib 3 ■ 2 x 4 K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology


    OCR Scan     		PDF CY7C183/184 48-pin 52-pin L7C183/184 L7C183 L7C184

    Untitled

    Abstract: No abstract text available
    Text: L7C183/184 2 x 4K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 20 ns worst-case □ Low Power Operation


    OCR Scan     		PDF CY7C183/184 48-pin 52-pin L7C183/184 Z0000Z00002Z>

    D467

    Abstract: No abstract text available
    Text: SEC ¿IPD46741A 8192 X 20-Bit X 2 Static BiCMOS RAM NEC Electronics Inc. Description Ordering Information The /JPD46741A is a high-performance BiCMOS static RAM organized as a 8192 x 20 bits x 2 and designed to be used as a high-speed cache memory. The ¿/PD46741A integrates two 8192 x 20-bit SRAM cores


    OCR Scan     		PDF uPD46741A 20-Bit /PD46741ALP-12 LP-15 /JPD46741A /PD46741A 33-MHz PD46741A jtfPD46741A D467

    STK11068-30

    Abstract: STK1106
    Text: STK11C68 5IIDTEK CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM FEATURES DESCRIPTION • 2 5 ,3 0 ,3 5 and 45ns Access Times The Simtek STK11C68 is a fast static RAM 25,30,35, 45ns , with a nonvolatile electrically-erasable PROM (EEPROM) element incorporated in each static memory


    OCR Scan     		PDF STK11C68 STK11C68 STK11068-30 STK1106

    Untitled

    Abstract: No abstract text available
    Text: LH5168SH C M O S 64K 8K x 8 Static Ram FEATURES DESCRIPTION • 8 ,1 9 2 x 8 bit organization The LH5168SH is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (M AX.) • Low current consumption:


    OCR Scan     		PDF LH5168SH LH5168SH 28-PIN 28-pin, 450-mil OP28-P-450) LH5168SHN 68shn

    dfw11

    Abstract: No abstract text available
    Text: IDT7165S IDT7165L CMOS STATIC RAM 64K 8K x 8-BIT RESETTABLE RAM NOT RECOMMENDED FOR NEW DESIGNS <’> FEATURES: DESCRIPTION: • High-speed asynchronous RAM clear on Pin 1 (clears all RAM bits to 0, reset cycle time = 2 x tAA) • High-speed address access time


    OCR Scan     		PDF IDT7165S IDT7165L 35/45/55ns 30/35/45ns 15/20/25ns 300mW 250mW dfw11

    Untitled

    Abstract: No abstract text available
    Text: IDT7165S IDT7165L CMOS STATIC RAM 64K 8K x 8-BIT RESETTABLE RAM NOT RECOMMENDED FOR NEW DESIGNS <’> FEATURES: DESCRIPTION: • High-speed asynchronous RAM clear on Pin 1 (clears all RAM bits to 0, reset cycle time = 2 x tAA) • High-speed address access time


    OCR Scan     		PDF /20/25ns T7165L IDT7165S/L MIL-STD-883,

    L7C185NC45

    Abstract: No abstract text available
    Text: LOGIC D E V I C E S lENC ILE D • SS bST DS QGO0S7b 1 L7C185 8K x 8 Static RAM Features -r-1/6-23-/2. Description □ 8K by 8 Static RAM with chip select The L7C185 is a high-performance, low-power CMOS static RAM. The powerdown, output enable storage circuitry is organized as 8,192


    OCR Scan     		PDF L7C185 -r-1/6-23-/2. L7C185 L7C185NC45

    HM62A168

    Abstract: 8d15 62A168
    Text: HM62A168/HM62A188 Series Prelim inary • PIN-OUT Direct M apped 8,192-Word x 16/18-Bit 2-Way 4,096-W ord x 16/18-Bit Static Cache RAM ■ DESCRIPTION T h e Hitachi H M 62 A 168 /H M 62A 1 88 is a high speed 128/144-kbit static cache RAM organized as 2-way set associative 4k x 16/18 or


    OCR Scan     		PDF HM62A168/HM62A188 192-Word 16/18-Bit 128/144-kbit 52-pin 62A168/HM 62A188 HM62A168 8d15 62A168

    Untitled

    Abstract: No abstract text available
    Text: SI MTEK CORP b2E D m 02740fl7 QOQQi bb T33 • S IK STK10C68 S lf ilT E H CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM 2 FEATURES DESCRIPTION • • • • ■ . • • • ■ • • • The SimtekSTK10C68 is a fast static RAM 2 5 ,3 0 ,3 5 ,


    OCR Scan     		PDF 02740fl7 STK10C68 SimtekSTK10C68 STK10C68, STK10C68

    idt7165

    Abstract: 2979
    Text: IDT7165S IDT7165L CMOS STATIC RAM 64K 8K x 8-BIT RESETTABLE RAM NOT RECOMMENDED F O R N E W D E S IG N S <1> FEATURES: DESCRIPTION: • High-speed asynchronous RAM clear on Pin 1 (clears all RAM bits to 0, reset cycle time = 2 x tM ) • High-speed address access time


    OCR Scan     		PDF 35/45/55ns 30/35/45ns 15/20/25ns IDT7165S 300mW IDT71651Active: 250mW IDT7165L 28-pin, 28-pin idt7165 2979

    82385

    Abstract: TNR*G gg70 TC55187 DP1 TOS TC55187T25 tnrg TC55187T-30 al2v BS5B5
    Text: 2 -W A Y 4,096 W ORDS x 18 BITS / 8,192 W ORDS x 18 CMOS STATIC CACHE DATA RAM BITS DESCRIPTION The TC55187T is a 147,456 bits high-speed static RAM which can be user-configured either as 2-way 4,096 words by 18 bits or as 8,192 words by 18 bits. It is provided with a byte control and on-chip


    OCR Scan     		PDF TC55187T TC55187Tâ TC55187T-25, TC55187T-30 QFJ52â 82385 TNR*G gg70 TC55187 DP1 TOS TC55187T25 tnrg TC55187T-30 al2v BS5B5

    Untitled

    Abstract: No abstract text available
    Text: STK11C68 SlfTITEK CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM FEATURES DESCRIPTION • • • • • • • • • • • • • The Simtek S T K 11C 68 is a fast static RAM 2 5 ,3 0 ,3 5 , 45ns , with a nonvolatile electrically-erasable PROM


    OCR Scan     		PDF STK11C68 STK11C68

    Untitled

    Abstract: No abstract text available
    Text: CY7C185 W CYPRESS SEMICONDUCTOR 8K x 8 Static RAM Features Functional Description • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active H IG H chip enable (CE 2).


    OCR Scan     		PDF CY7C185 CY7C185 CY7C185-12PC CY7C185--15PC CY7C185--15VC

    Untitled

    Abstract: No abstract text available
    Text: MOSEL-VITELIC 4ûE D • ta3S33Tl 0 0 0 0 7 0 7 MOSEL T ■ HO MS6264A 8K x 8 High Speed CMOS Static RAM T -4 6 -2 3 -1 2 FEATURES DESCRIPTION • High spaed - 45/55 ns Max. The MOSEL MS6264A is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The


    OCR Scan     		PDF ta3S33Tl MS6264A MS6264A S6264AL-45N P28-2 S6264AL-45P P28-1 S6264AL-45S S28-1 S6264AL-55N

    Untitled

    Abstract: No abstract text available
    Text: CY7C185 CYPRESS SEMICONDUCTOR 8K x 8 Static RAM Features Functional Description • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active H IG H chip enable (CE 2 ),


    OCR Scan     		PDF CY7C185 CY7C185 300-mil-wide CY7C185â 28-Lead 300-Mil) 28-Lead

    0324H

    Abstract: No abstract text available
    Text: HM62A932 Series Preliminary 32k x 9 Data Cache RAM • DESCRIPTION The Hitachi HM62A932 is a high speed 288-kbit synchronous static cache RAM optimized for use in secondary caches fo r 3 2 -b it m icroprocessor system. This RAM has a 32-kword x 9-bit organiza­


    OCR Scan     		PDF HM62A932 288-kbit 32-kword 32-bit 44-pin 0324H

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM56824A DSPRAM 8K x 24 Bit Fast Static RAM The M C M 56824A is a 1196,608 bit static random access memory organized as 8,192 words of 2 4 bits, fabricated using Motorola's high-performance silicongate C M O S technology. The device integrates an 8K x 2 4 SRAM core with multi­


    OCR Scan     		PDF MCM56824A 6824A DSP56001 DSP560Q1 6824A MCM56B24AFN20 56824AFN25 56824AZP20

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS82C308 2 x 2K x 16 Cache Data RAM FEATURES DESCRIPTION • Supports 16 bit wide 80286 and 32 bit wide 80386 system cache data requirements directly. The MOSEL 82C308 is a high performance CMOS static RAM optimized for use as cache subsystem data buffers in


    OCR Scan     		PDF MS82C308 82C308 PID004B MS82C308-35JC J44-1 MS82C308-45JC MS82C308-55JC

    82C30

    Abstract: No abstract text available
    Text: MOSEL MS82C308 2 x 2K x 16 Cache Data RAM FEATURES DESCRIPTION • Supports 16 bit wide 80286 and 32 bit wide 80386 system cache data requirements directly. The MOSEL 82C308 is a high performance CMOS static RAM optimized for use as cache subsystem data buffers in


    OCR Scan     		PDF 82C307/82C327 PID004B MS82C308 MS82C308-35JC MS82C308-45JC MS82C308-55JC J44-1 82C30

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS6265 8K x 8 Slow Speed CMOS Static RAM Ultra Low Data Retention Current FEATURES DESCRIPTION • Available in 100 ns M ax. Th e M O S E L M S 6 2 6 5 is a slow speed, very low data retention current, 6 4 K bit static R A M , organized as 8 1 9 2 x


    OCR Scan     		PDF MS6265 S6265 500mV MS6265-10NC P28-3 MS6265-10FC S28-4 MS6265-10PC P28-6 MS6265-10PI