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    STATIC INDUCTION TRANSISTOR SIT Search Results

    STATIC INDUCTION TRANSISTOR SIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    STATIC INDUCTION TRANSISTOR SIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    electrolytic capacitor, .1uF

    Abstract: silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf
    Text: 0150SC-1250M Rev A 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


    Original     		PDF 0150SC-1250M 0150SC-1250M 1250Watts, 500mA, electrolytic capacitor, .1uF silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf

    0150SC-1250M

    Abstract: No abstract text available
    Text: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


    Original     		PDF 0150SC-1250M 0150SC-1250M 1250Watts, 500mA,

    electrolytic capacitor, .1uF

    Abstract: z1071 "Static Induction Transistor" "silicon carbide" FET atc100b sit transistor SIT Static Induction Transistor electrolytic capacitor, 1uF 1000uf capacitor 0150SC-1250M
    Text: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


    Original     		PDF 0150SC-1250M 0150SC-1250M 1250Watts, 500mA, electrolytic capacitor, .1uF z1071 "Static Induction Transistor" "silicon carbide" FET atc100b sit transistor SIT Static Induction Transistor electrolytic capacitor, 1uF 1000uf capacitor

    Untitled

    Abstract: No abstract text available
    Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of


    Original     		PDF 0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS,

    J294

    Abstract: SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W
    Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of


    Original     		PDF 0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS, J294 SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W

    Untitled

    Abstract: No abstract text available
    Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION


    Original     		PDF 0405SC-1500M 0405SC-1500M 1500Watts, 125mA

    SIT Static Induction Transistor

    Abstract: transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF 0405SC-1500M
    Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION


    Original     		PDF 0405SC-1500M 0405SC-1500M 1500Watts, 125mA SIT Static Induction Transistor transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF

    j130 fet

    Abstract: 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification
    Text: 0405SC-1000M Rev B 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON


    Original     		PDF 0405SC-1000M 0405SC-1000M 1000Watts, j130 fet 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification

    static induction transistor SIT

    Abstract: "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor 0405SC-1000M "Static Induction Transistor" x2404 1000UF 20V CAPACITOR
    Text: 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON


    Original     		PDF 0405SC-1000M 0405SC-1000M 1000Watts, static induction transistor SIT "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor "Static Induction Transistor" x2404 1000UF 20V CAPACITOR

    electrolytic capacitor, .1uF

    Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor
    Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET Common Gate The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION


    Original     		PDF 0405SC-2200M 0405SC-2200M 2200Watts, 55TW-FET 120mA electrolytic capacitor, .1uF electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor

    1000uf electrolytic capacitor

    Abstract: capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet
    Text: 0405SC-1000M Rev A 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON


    Original     		PDF 0405SC-1000M 0405SC-1000M 1000Watts, 1000uf electrolytic capacitor capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet

    Untitled

    Abstract: No abstract text available
    Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION


    Original     		PDF 0405SC-2200M 0405SC-2200M 2200Watts, 55TW-FET 120mA

    Bipolar Static Induction Transistor

    Abstract: SCR 1000A 4000a scr 150A SCR 2400V inverter grade SCR 600A thyristor scr SCR 100A 1200V thyristor module 700a mega 88 pa IGBT 6500V
    Text: News of Importance to Power Semiconductor Users www.pwrx.com FIRST QUARTER 2003 Powerex Raises the Bar in IGBT Technology with NF-Series U P C O M I N G TRADE SHOWS Annual Technical Conference of the IEEE Industry Applications Society October 12-16, 2003 Grand America Hotel


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    10KV SiC

    Abstract: POWEREX DIP-IPM igbt circuit for induction melting induction heating 30khz westinghouse transistor cross reference Induction Heating Inverter melting Mitsubishi SiC IPM module ipm based three phase ups design igbt module catalog general product Powerex Bipolar Static Induction Transistor
    Text: News of Importance to Power Semiconductor Users www.pwrx.com Second QUARTER 2007 Youngwood Factory Renamed “Stan Hunt Manufacturing Facility” NEW President and CEO of Powerex Appointed Powerex, Inc. recently named Craig Morrow as its new President and Chief Executive Officer.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: AN191 M O T O R C ONTROL S OFTWARE E X AM P L E S 1. Introduction Small motors, less than 300 W, are found in a wide variety of applications. These include automobiles, printers, copiers, paper handlers, factory automation, test equipment, robotics, space & military, and many


    Original     		PDF AN191

    dc motor interface with 8051

    Abstract: pwm using pca brushless f330 optical quadrature encoder IR2104S PITTMAN encoder C8051F3xx BLDC motor interface with 8051 schematic diagram motor control using pwm module AN191
    Text: AN191 M O T O R C O N T R O L S O FT W A R E E X A M P L E S Relevant Devices This application note applies to the following devices: C8051F3xx Introduction Small motors, less than 300 W, are found in a wide variety of applications. These include automobiles,


    Original     		PDF AN191 C8051F3xx dc motor interface with 8051 pwm using pca brushless f330 optical quadrature encoder IR2104S PITTMAN encoder C8051F3xx BLDC motor interface with 8051 schematic diagram motor control using pwm module AN191

    15J 6KV

    Abstract: speed control of induction motor by using scr "The Magic of I2t" SCR C106D equivalent circuit slip ring motor characteristics curve VARISTOR 275 LA 20A 5 hp DC motor speed control using scr transformer with 20kVA rating 20kVA transformer scr C106D
    Text: APPLICATION NOTES Littelfuse Varistor Design Examples APPLICATIONS: 3000 1500 It is desired to prevent failure of the power supply shown in Figure 1b to be used on residential 117VAC lines. A representative transient generator is to be used for testing as shown in Figure 1a.


    Original     		PDF 117VAC e-10-5 500V/80 -40oC V251BA60 EC638 15J 6KV speed control of induction motor by using scr "The Magic of I2t" SCR C106D equivalent circuit slip ring motor characteristics curve VARISTOR 275 LA 20A 5 hp DC motor speed control using scr transformer with 20kVA rating 20kVA transformer scr C106D

    SIT Static Induction Transistor

    Abstract: sit transistor "static induction transistor" tokin sit transistor tokin Static Induction Transistor SIT transistor sit static induction transistor STATIC INDUCTION tokin TC-30
    Text: NEW PRODUCTS UPDATE T O K lii Small-sized Static Induction Transistor SIT with high withstand voltage 'T - S I - i', led. Outline This device is a static induction transistor especially suited for applications which require high-speed switching and a high


    OCR Scan     		PDF 200ns) 35max. TC-20 TC-30 E08-875-1479 2-26A UD-04E N920920P1 SIT Static Induction Transistor sit transistor "static induction transistor" tokin sit transistor tokin Static Induction Transistor SIT transistor sit static induction transistor STATIC INDUCTION tokin TC-30

    tokin sit transistor

    Abstract: SIT Static Induction Transistor 58AA Static Induction Transistor SIT tokin Tokin* SIT static induction transistor 9936 transistor SIT transistor transistor sit
    Text: TOKIN CORP NEW PRODUCTS UPDATE • 'iQbTbBb 0 0 0 1 0 5 1 1 4 1 ■ TOAI 54E D TQKIfl Small-sized Static Induction Transistor SIT with high withstand voltage 'T -S I -ii, led. Outline This device is a static induction transistor especially suited for applications which require high-speed switching and a high


    OCR Scan     		PDF 200ns) 35max. 2-26A UD-04E N920920P1 tokin sit transistor SIT Static Induction Transistor 58AA Static Induction Transistor SIT tokin Tokin* SIT static induction transistor 9936 transistor SIT transistor transistor sit

    SIT Static Induction Transistor

    Abstract: Static Induction Transistor Static Induction Transistor SIT "static induction transistor"
    Text: AQV234 PhotoMOS RELAYS HS High Sensitivity Type 1-Channel (Forni A) Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 1. High sensitivity type LED operate current: typical 0.31 mA 2. Power MOSFET incorporating SIT (Static Induction Transistor) allows control


    OCR Scan     		PDF AQV234 E43149 LR26550 SIT Static Induction Transistor Static Induction Transistor Static Induction Transistor SIT "static induction transistor"

    SIT Static Induction Transistor

    Abstract: 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182
    Text: Another Tokin exclusive. Static Induction Ibansisiors SIT Static Induction Transistor w as in v e n te d by Professor Jun-ichi N ishizawa of Tohoku U niversity in 1950. After several s u b s e q u e n t technological d e v e lo p ­ m e n ts a n d im p ro v e m e n ts, it w a s first utilized in 1979 as a n industrial p o w e r SIT.


    OCR Scan     		PDF 2-26A L-03E SIT Static Induction Transistor 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182

    tokin

    Abstract: Bipolar Static Induction Transistor transistor 03e static induction transistor 9936 transistor tokin transistor "static induction transistor" TOKIN America STATIC INDUCTION tokin
    Text: TOKIN CORP NEW PRODUCTS UPDATE 54E D • *ìGb7b2b D D G 1 Q S G 202 H I T O A I T O K in TOKIN B-SIT New TBM Series led. Outline • TOKIN is offering a new series of normally-off Bipolar mode Static Induction Transistor B-SIT constructed using small-sized molded packages in a Darlington configuration.


    OCR Scan     		PDF dimensions56 2-26A UD-03E N920920P1 tokin Bipolar Static Induction Transistor transistor 03e static induction transistor 9936 transistor tokin transistor "static induction transistor" TOKIN America STATIC INDUCTION tokin

    PF0310A

    Abstract: PF0144 Hitachi PF0030 HE8807CL Hitachi Industry Laser Diodes HL7806
    Text: Reliability 1 Reliability 1.1 Reliability Data for CODEC LSIs T his sectio n d isc u sse s the re lia b ility d ata for Hitachi communication devices. Although current data is u sed , the rap id pace o f sem ico n d u cto r device development means new data may be added


    OCR Scan     		PDF

    8051 microcontroller interface with ir sensors

    Abstract: iron bh curve siemens Mass Air Flow Sensor siemens TLE 4905L TRANSISTOR BH RW TESLA transistor Bipolar Static Induction Transistor ir slotted wheel encoder camshaft sensor target wheel axial sensing real time application of shape memory alloys
    Text: SIEMENS 6 Silicon Hail-Effect Sensors 6.1 Introduction Silicon Hall-Effect Sensors Electrical Tests and Application Circuit • The sockets or integrated circuits must not be conducting any voltage when individual devices or assembled circuit boards are inserted or withdrawn, unless works’


    OCR Scan     		PDF