BUT12
Abstract: C-16 MT46V8M16 MT48LC4M16A2 25L128160
Text: ARM PrimeCell MultiPort Memory Controller PL175 Revision: r1p0 Technical Reference Manual Copyright 2002 ARM Limited. All rights reserved. ARM DDI 0230A ARM PrimeCell MultiPort Memory Controller (PL175) Technical Reference Manual Copyright © 2002 ARM Limited. All rights reserved.
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PL175)
BUT12
C-16
MT46V8M16
MT48LC4M16A2
25L128160
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SAA5231
Abstract: mk48h64 mk48h64 static RAM TEA2014A DIP40 L7805 SDA5243 STV5345 BC548B PHILIPS TEA2014
Text: STV5345 STV5345/H - STV5345/T TELETEXT DECODER WITH 8 INTEGRATED PAGES COMPLETE TELETEXT DECODER INCLUDING ON-CHIP 8 PAGES MEMORY, REDUCING EMC RADIATIONS UPWARD SOFTWARE AND HARDWARE COMPATIBLE WITH PREVIOUS SGS-THOMSON’s DECODER SDA5243 DIRECT INTERFACE TO AN EXTERNAL
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STV5345
STV5345/H
STV5345/T
SDA5243
SAA5231
mk48h64
mk48h64 static RAM
TEA2014A
DIP40
L7805
SDA5243
STV5345
BC548B PHILIPS
TEA2014
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dot matrix printer circuit diagram datasheet
Abstract: ghost detector mk48h64 rolling display using led matrix SAA5231 l7805 2A DIP40 L7805 SDA5243 STV5345
Text: STV5345 STV5345/H - STV5345/T TELETEXT DECODER WITH 8 INTEGRATED PAGES COMPLETE TELETEXT DECODER INCLUDING ON-CHIP 8 PAGES MEMORY, REDUCING EMC RADIATIONS UPWARD SOFTWARE AND HARDWARE COMPATIBLE WITH PREVIOUS SGS-THOMSON’s DECODER SDA5243 DIRECT INTERFACE TO AN EXTERNAL
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STV5345
STV5345/H
STV5345/T
SDA5243
dot matrix printer circuit diagram datasheet
ghost detector
mk48h64
rolling display using led matrix
SAA5231
l7805 2A
DIP40
L7805
SDA5243
STV5345
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ELPIDA 512MB NOR FLASH
Abstract: MT46V16M16 TIC 122 Transistor datasheet 128M DDR SDR SDRAM samsung 0 micron NAND FLASH INTERCONNECT MT46V8M16 MT48LC4M16A2 PL176 MT28S4M16 Micron MT48LC4M16A2
Text: ARM PrimeCell MultiPort Memory Controller PL176 Revision: r0p1 Technical Reference Manual Copyright 2003 ARM Limited. All rights reserved. ARM DDI 0269A ARM PrimeCell MultiPort Memory Controller (PL176) Technical Reference Manual Copyright © 2003 ARM Limited. All rights reserved.
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PL176)
ELPIDA 512MB NOR FLASH
MT46V16M16
TIC 122 Transistor datasheet
128M DDR SDR SDRAM samsung 0
micron NAND FLASH INTERCONNECT
MT46V8M16
MT48LC4M16A2
PL176
MT28S4M16
Micron MT48LC4M16A2
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SAA5231
Abstract: mk48h64 philips color television cct diagram TEA2014A SDA5243 BC558B DIP40 L7805 1667B TEA2014
Text: SDA5243 SDA5243/H COMPUTER-CONTROLLED TELETEXT DECODER AUTOMATIC SELECTION OF UP TO SEVEN NATIONAL LANGUAGES FOUR SIMULTANEOUS PAGE REQUESTS DISPLAY OF THE 25TH STATUS ROW MICROPROCESSOR CONTROL VIA AN I2C BUS SLAVE ADDRESS 0010001 R/W DATA ACQUISITION AVAILABLE FROM
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SDA5243
SDA5243/H
DIP40
SDA5243
SDA5243/H
DIP40
PM-DIP40
SAA5231
mk48h64
philips color television cct diagram
TEA2014A
BC558B
L7805
1667B
TEA2014
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philips color television cct diagram
Abstract: mk48h64 524303T CBB21 SDA5243
Text: SDA5243 SDA5243/H COMPUTER-CONTROLLED TELETEXT DECODER AUTOMATIC SELECTION OF UP TO SEVEN NATIONAL LANGUAGES FOUR SIMULTANEOUS PAGE REQUESTS DISPLAY OF THE 25TH STATUS ROW MICROPROCESSOR CONTROL VIA AN I2C BUS SLAVE ADDRESS 0010001 R/W DATA ACQUISITION AVAILABLE FROM
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SDA5243
SDA5243/H
DIP40
SDA5243/H
PM-DIP40
philips color television cct diagram
mk48h64
524303T
CBB21
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Untitled
Abstract: No abstract text available
Text: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 C to +85 C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically
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FM28V202A
44-pin
151-year
30-ns
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Untitled
Abstract: No abstract text available
Text: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 C to +85 C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically
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FM28V202A
44-pin
151-year
30-ns
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Untitled
Abstract: No abstract text available
Text: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 °C to +85 °C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically
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FM28V202A
44-pin
151-year
30-ns
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Untitled
Abstract: No abstract text available
Text: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 °C to +85 °C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically
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FM28V202A
44-pin
151-year
30-ns
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY FM28V202 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes
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FM28V202
FM28V202
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY FM28V202 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes
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FM28V202
FM28V202
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Untitled
Abstract: No abstract text available
Text: FM22LD16 4-Mbit 256 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features Functional Overview • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 16 ❐ Configurable as 512 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes
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FM22LD16
151-year
25-ns
55-ns
110-ns
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Untitled
Abstract: No abstract text available
Text: FM21LD16 2-Mbit 128 K x 16 F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and
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FM21LD16
151-year
30-ns
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Untitled
Abstract: No abstract text available
Text: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 Configurable as 512Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 40MHz Advanced High-Reliability Ferroelectric Process
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FM22LD16
256Kx16
512Kx8
40MHz
256Kx16
FM22LD16
FM22LD16-55-BG
C8556953BG1
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16D 213 A O
Abstract: 16D 213 B H 16D 213 B A ic iq 6310a 16D 213 A R 6310A 16D 213 A L ALS6311A 74ALS6311A
Text: SN 74ALS6310A, SN 74ALS6311A STATIC COLUMN AND PAGE-MODE ACCESS DETECTORS D 3 0 2 0 , JUNE 1987 - REVISED DECEMBER 1989 Detects Present Row Equal to Last Row Address D W OR N P A C K A G E ITOP VIEW High-Performance Compare: ALS6310A CLK to HSA - 18 ns ALS6311A Address to HSA - 14 ns
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74ALS6310A,
74ALS6311A
ALS6310A
ALS6311A
SN74ALSG310A,
16D 213 A O
16D 213 B H
16D 213 B A
ic iq 6310a
16D 213 A R
6310A
16D 213 A L
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ALS6311
Abstract: 74S33 d0740
Text: TEXAS INSTR V la ± ^ X 1-U -CLOGICÏ TI y L | □ IDJI I L J u u n a o n i- g - r Ÿ S ~ ~ /~ 7 SN54ALS6310, SN54ALS6311, SN74ALS6310, SN74ALS6311 STATIC COLUMN AND PAGE-MODE ACCESS DETECTORS D 302 0, JU N E 1987 SN 54A LS' . . . J PACKAGE S N 74A LS' . . D W OR N PACKAGE
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SN54ALS6310,
SN54ALS6311,
SN74ALS6310,
SN74ALS6311
ALS6310
ALS6311
SN74ALSG31U,
74S33
d0740
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6310A
Abstract: B316J
Text: SN74ALS6310A, SN74ALS6311A STATIC COLUMN AND PAGE MODE ACCESS DETECTORS D 3 0 2 0 . JUN E 1 9 8 7 Detects Present Row Equal to Last Row Address R E V IS E D D E C E M B E R 1 9 8 9 D W OR N PACKAGE ITO P VIE W ! High-Performance Compare: 'A L S 6 3 1 0 A CLK to HSA - 18 ns
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SN74ALS6310A,
SN74ALS6311A
6310A
B316J
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ISI64
Abstract: No abstract text available
Text: SGS-TtiOMSON ilLlIMiiMDtêS STV5345 STV5345/H - STV5345/T TELETEXT DECODER WITH 8 INTEGRATED PAGES PRELIMINARY DATA COMPLETE TELETEXT DECODER INCLUD ING ON-CHIP 8 PAGES MEMORY, REDUC ING EMC RADIATIONS UPWARD SOFTWARE AND HARDWARE COMPATIBLE WITH PREVIOUS SGS-THOMSON’s DECODER SDA5243
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STV5345
STV5345/H
STV5345/T
SDA5243
ISI64
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658128
Abstract: hitachi eprom HMCS6800 Hitachi Transparent Conductive Transfer Film HM658128 Static Column & Page-Mode Detector time-base corrector "magnetic tape"
Text: • APPLICATIO N 1.2. Data Retention Mode and Battery Back-up System The data in RAM is destroyed at power off. How ever, CMOS static RAM has a data retention mode. In this mode, power consumption at standby is ex tremely low and supply voltage can be reduced to
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Untitled
Abstract: No abstract text available
Text: STV5345 STV5345/H- STV5345/T SGS"THOMSON * 7M, Ki]0{gœ[LI g1î ®R0Q^ TELETEXT DECODER WITH 8 INTEGRATED PAGES DIP40 (Plastic Package ORDER CODE : STV5345 STV5345/H STV5345/T West European East European Turkish & European PIN CONNECTIONS VDD d DESCRIPTION
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DIP40
STV5345
STV5345/H
STV5345/T
STV5345isa
SAA5231
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hitachi eprom
Abstract: HMCS6800
Text: • APPLICATION 1. Static RAM tc o tt time for chip select to data retention : The 1.1. Static RAM Memory Cell The static RAM memory cell consists of flip-flops organized as 4 NMOS transistors and 2 load resistors as shown in figure 1-1. The data in the cell can be
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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Untitled
Abstract: No abstract text available
Text: /T 7 S G S -T H O M S O N RflD K [l[L[l Sir^®RaD®g STV5345 STV5345/H - STV5345/T TELETEXT DECO DER W ITH 8 INTEGRATED PAGES • COMPLETE TELETEXT DECODER INCLUD ING ON-CHIP 8 PAGES MEMORY, REDUC ING EMC RADIATIONS ■ UPWARD SOFTWARE AND HARDWARE COMPATIBLE WITH PREVIOUS SGS-THOMSON’s DECODER SDA5243
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STV5345
STV5345/H
STV5345/T
SDA5243
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