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    STATIC CHARACTERISTICS OF MOSFET Search Results

    STATIC CHARACTERISTICS OF MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    STATIC CHARACTERISTICS OF MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Semitec

    Abstract: No abstract text available
    Text: Chip Varistor Product overview Chip Varistor have good nonlinear voltage-current characteristics and high surge capability. They also have fast-response characteristics in several hundred pico second level. They are very suitable and widely used for the problems of transient overvoltage protection caused by ESD Electro Static Discharge .


    Original     		PDF pl1-3-3623-7776 Semitec

    SiC BJT

    Abstract: transistor 304
    Text: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.


    Original     		PDF 12M6501 SiC BJT transistor 304

    MOS Controlled Thyristor

    Abstract: thyristor lifetime
    Text: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch+Pch MOSFET EM6M2 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm EMT6 Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.


    Original     		PDF R0039A

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch+Pch MOSFET EM6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.


    Original     		PDF R0039A

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch+Pch MOSFET EM6M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.


    Original     		PDF R0039A

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4)


    Original     		PDF R0039A

    TT8M3

    Abstract: 100td
    Text: 1.5V Drive Nch + Pch MOSFET TT8M3 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low On-state resistance. 2) Low voltage drive(1.5V). 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :M03


    Original     		PDF R1010A TT8M3 100td

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET zDimensions Unit : mm TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4)


    Original     		PDF R0039A

    TT8M1

    Abstract: No abstract text available
    Text: 1.5V Drive Nch + Pch MOSFET TT8M1  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). (8) (7) (6) (5) (1) (2)


    Original     		PDF R1010A TT8M1

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode.


    Original     		PDF US6M11 R0039A

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : M02


    Original     		PDF R0039A

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		PDF US6M11 R0039A

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


    Original     		PDF US6M11 R0039A

    Untitled

    Abstract: No abstract text available
    Text: SP8M21 SP8M21FRA Transistors 4V Drive Nch+Pch MOSFET AEC-Q101 Qualified SP8M21 SP8M21FRA zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET SOP8 zFeatures 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small and surface mount package (SOP8).


    Original     		PDF SP8M21 SP8M21FRA AEC-Q101

    SP8M21

    Abstract: No abstract text available
    Text: SP8M21 Transistors 4V Drive Nch+Pch MOSFET SP8M21 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm SOP8 zFeatures 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small and surface mount package (SOP8). Each lead has same dimensions


    Original     		PDF SP8M21 SP8M21

    Untitled

    Abstract: No abstract text available
    Text: SP8M21 Transistors 4V Drive Nch+Pch MOSFET SP8M21 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm SOP8 zFeatures 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small and surface mount package (SOP8). Each lead has same dimensions


    Original     		PDF SP8M21 25possible

    sh8m41

    Abstract: No abstract text available
    Text: 4V Drive Nch + Pch MOSFET SH8M41  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm SOP8 (8) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (7) (6) (2) (3)


    Original     		PDF SH8M41 R1010A sh8m41

    SP8M65

    Abstract: No abstract text available
    Text: SP8M65 Transistors 4V+4V Drive Nch+Pch MOSFET SP8M65 zStructure Silicon N-channel / P-channel MOSFET zDimensions Unit : mm SOP8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). zApplication Switching


    Original     		PDF SP8M65 SP8M65

    Untitled

    Abstract: No abstract text available
    Text: 4V Drive Nch + Pch MOSFET SH8M41  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm SOP8 (8) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (7) (6) (2) (3)


    Original     		PDF SH8M41 R1010A

    PCHANNEL

    Abstract: Transistor Mosfet N-Ch 30V
    Text: SP8M5 Transistors 4V Drive Nch+Pch MOSFET SP8M5 zStructure Silicon N-channel / P-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (4) 0.4Min. 0.2 Each lead has same dimensions zPackaging specifications Type (1) 1.27 1pin mark zApplication Power switching, DC / DC converter.


    Original     		PDF

    SP8M8

    Abstract: No abstract text available
    Text: SP8M8 Transistors 4V Drive Nch+Pch MOSFET SP8M8 zStructure Silicon N-channel / P-channel MOSFET zDimensions Unit : mm SOP8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Smal Surface Mount Package (SOP8). zApplication Power switching, DC / DC converter.


    Original     		PDF

    MP6M63

    Abstract: MP6M
    Text: MP6M63 Transistors 4V Drive Nch+Nch MOSFET MP6M63 zStructure Silicon N-channel / P-channel MOSFET zDimensions Unit : mm MPT6 1.5 0.4 4.5 3.0 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). 1.5 (5)


    Original     		PDF MP6M63 MP6M63 MP6M

    pn junction diode

    Abstract: rg902 p-n junction diode VPS-80 1RLU014 ss 050a
    Text: STE » MÔSS4S2 GÜ1232D 3Ö2 • INR IRLD110 IO R INTERNATIONAL R ECTIFIER Electrica Characteristics @ T j = 25°C unless otherwise specified Parameter BV^ss Drain-to-Source Breakdown Voltage ABVqss/a Tj Temp. Coefficient of Breakdown Voltage Static Drain-to-Source On Resistance


    OCR Scan     		PDF 1232D IRLD110 300fis; pn junction diode rg902 p-n junction diode VPS-80 1RLU014 ss 050a