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STAP57060 Abstract: tc 971 700B AN1294 Text: STAP57060 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 14.3 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10 RF-STAP-package	Original	STAP57060 PowerSO-10 STAP57060 tc 971 700B AN1294	PDF

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STAP57060

Abstract: tc 971 700B AN1294
Text: STAP57060 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 14.3 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10 RF-STAP-package

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STAP57060 PowerSO-10 STAP57060 tc 971 700B AN1294

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