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    STANFORD Search Results

    STANFORD Datasheets (178)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGA-3318 Stanford Microdevices Dual Catv Broadband High Linearity Sige Hbt Amplifier Original PDF
    CGA-3318 Stanford Microdevices Dual CATV broadband high linearity SIGe HBT amplifier Original PDF
    CGA-6618 Stanford Microdevices Dual CATV broadband high linearity SIGe HBT amplifier Original PDF
    COM9026 Stanford Microdevices LOCAL AREA NETWORK CONTROLLER LANC-TM Scan PDF
    NGA-186 Stanford Microdevices DC-6000 MHz, cascadable 50 ? (1.2:1 VSWR) GaAs HBT MMIC amplifier. 12.0dB gain, 14.7 dBmP1dB at 1950MHz. Original PDF
    NGA-286 Stanford Microdevices DC-6000 MHz, cascadable 50 ? (1.3:1 VSWR) GaAs HBT MMIC amplifier. High gain: 14.8 at 1950MHz. Original PDF
    NGA-386 Stanford Microdevices DC-5000 MHz, cascadable 50 ? (1.2:1 VSWR) GaAs HBT MMIC amplifier. High gain: 18.9 at 1950MHz. Original PDF
    NGA-486 Stanford Microdevices DC-5 GHz, cascadable 50 ? InGa/GaAs HBT MMIC amplifier. High gain: 14.1 dB at 1950MHz. Original PDF
    NGA-489 Stanford Microdevices 0.5-10 GHz, cascadable 50 ? InGa/GaAs HBT MMIC amplifier. High gain: 14.5 dB at 1950MHz. Original PDF
    NGA-586 Stanford Microdevices DC-5.5 GHz, cascadable 50 ? InGa/GaAs HBT MMIC amplifier. High gain: 18.6dB at 1950MHz. Original PDF
    NGA-589 Stanford Microdevices DC-5.5 GHz, cascadable 50 ? InGa/GaAs HBT MMIC amplifier. High gain: 19.2 dB at 1950MHz. Original PDF
    NGA-686 Stanford Microdevices DC-6000 MHz, cascadable 50 ? GaAs HBT MMIC amplifier. 11.4dB gain, 19.2 dBm P1dB at 1950MHz. Original PDF
    NGA-689 Stanford Microdevices DC-5000 MHz, cascadable 50 ohm(1.4:1 VSRM) GaAs HBT MMIC amplifier. 11.7dB gain, 18.9 dBm P1dB at 1950MHz. Original PDF
    SCA-1 Stanford Microdevices 0.3-3 GHz, cascadable GaAs MMIC amplifier Original PDF
    SCA-11 Stanford Microdevices 0.3-3 GHz, cascadable GaAs MMIC amplifier Original PDF
    SCA-12 Stanford Microdevices DC-4 GHz, cascadable GaAs HBT MMIC amplifier. High output IP3: 35 dBm Original PDF
    SCA-13 Stanford Microdevices DC-5 GHz, cascadable GaAs HBT MMIC amplifier. High output IP3: 328 dBm Original PDF
    SCA-14 Stanford Microdevices DC-4 GHz, cascadable GaAs HBT MMIC amplifier. High output IP3: 332 dBm Original PDF
    SCA-15 Stanford Microdevices DC-3 GHz, cascadable GaAs HBT MMIC amplifier. High output IP3: +27dBm Original PDF
    SCA-16 Stanford Microdevices DC-3 GHz, cascadable GaAs HBT MMIC amplifier. High output IP3: +28dBm Original PDF
    ...

    STANFORD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Xa2 TRANSISTOR

    Abstract: SXH-189 AN023
    Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth


    Original     		PDF SXH-189 SXH-189 EDS-101247 Xa2 TRANSISTOR AN023

    SNA-676

    Abstract: 120C 155C SNA-600 SNA-676-TR1 SNA-676-TR2 SNA-676-TR3
    Text: Product Description SNA-676 Stanford Microdevices’ SNA-676 is a high-performance GaAs Heterojunction Bipolar Transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is utilized for broadband performance to 6.5


    Original     		PDF SNA-676 SNA-676 18dBm SNA-600) 120C 155C SNA-600 SNA-676-TR1 SNA-676-TR2 SNA-676-TR3

    SNA-576

    Abstract: MMIC 576 110C 155C SNA-500 SNA-576-TR1 SNA-576-TR2 SNA-576-TR3
    Text: Product Description SNA-576 Stanford Microdevices’ SNA-576 is a GaAs monolithic broadband amplifier housed in a low-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V. DC-3 GHz, Cascadable GaAs MMIC Amplifier


    Original     		PDF SNA-576 SNA-576 SNA-500) MMIC 576 110C 155C SNA-500 SNA-576-TR1 SNA-576-TR2 SNA-576-TR3

    Untitled

    Abstract: No abstract text available
    Text: Product Description SXT Series Stanford Microdevices’ SXT Series are high performance GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic packages. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and


    Original     		PDF Feb-98

    XA2 MMIC

    Abstract: Xa2 TRANSISTOR
    Text: Preliminary Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular


    Original     		PDF SXA-289 SXA-289 EDS-100622 XA2 MMIC Xa2 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-6289 Stanford Microdevices’ SGA-6289 is a high performance cascadeable 50-ohm amplifier designed for operation voltages as low as 4.0V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    Original     		PDF SGA-6289 50-ohm SGA-6289 DC-4500 EDS-100619

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Preliminary Product Description NGA-486 Stanford Microdevices’ NGA-486 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for


    Original     		PDF NGA-486 NGA-486 DC-6000 1950Mhz EDS-101104

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-3286 Stanford Microdevices’ SGA-3286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    Original     		PDF SGA-3286 50-ohm SGA-3286 DC-3600

    SL-60101

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-6010 SL-6010 SL-60101 SL-60102 SL-60102 SL60101 SL60102 EDS-100938

    Untitled

    Abstract: No abstract text available
    Text: Product Description SLN-186 Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz.


    Original     		PDF SLN-186 SLN-186 SLN-186-TR1 SLN-186-TR2 SLN-186-TR3

    Untitled

    Abstract: No abstract text available
    Text: Product Description Stanford Microdevices’ SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		PDF SGA-6386 EDS-100614

    transistor Bc 287

    Abstract: sga-9289
    Text: Preliminary Preliminary Product Description SGA-9289 Stanford Microdevices’ SGA-9289 is a high performance amplifier designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=28 dBm. This RF device uses the latest Silicon


    Original     		PDF SGA-9289 SGA-9289 270mA EDS-101498 transistor Bc 287

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-6389 Stanford Microdevices’ SGA-6389 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to


    Original     		PDF SGA-6389 50-ohm SGA-6389 DC-3000 EDS-100620

    transistor 20 dB 2400 mhz

    Abstract: No abstract text available
    Text: Preliminary Preliminary Product Description SXT-289 Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular


    Original     		PDF SXT-289 SXT-289 EDS-101157 transistor 20 dB 2400 mhz

    Stanford amplifier

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-4286 Stanford Microdevices’ SGA-4286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    Original     		PDF SGA-4286 50-ohm SGA-4286 DC-3500 Stanford amplifier

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-6010 SL-6010 SL-60101 SL-60102 SL-60102

    RF TRANSISTOR 1.5 GHZ A64

    Abstract: MMIC A64 marking A64 marking amplifier
    Text: Product Description Stanford Microdevices’ SGA-6486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		PDF SGA-6486 EDS-100615 RF TRANSISTOR 1.5 GHZ A64 MMIC A64 marking A64 marking amplifier

    Untitled

    Abstract: No abstract text available
    Text: Product Description SCA-15 Stanford Microdevices’ SCA-15 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between


    Original     		PDF SCA-15 27dBm. 100mA

    Untitled

    Abstract: No abstract text available
    Text: E l Stanford Microdevices Product Description SNA-200 Stanford Microdevices' SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides !6dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency


    OCR Scan     		PDF SNA-200 SNA-276, SNA-200 84-1LMIT1

    transistor 65 C 3549

    Abstract: linear amplifier P1dB 36dBm
    Text: Stanford Microdevices Product Description SNA-676 Stanford Microdevices' SNA-676 is a high-performance GaAs Heterojunction Bipolar Transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is utilized for broadband performance to 6,5


    OCR Scan     		PDF SNA-676 18dBm SNA-600) -676-TR1 -676-TR2 SNA-676-TR3 transistor 65 C 3549 linear amplifier P1dB 36dBm

    Untitled

    Abstract: No abstract text available
    Text: SMM-808 2.0-7.0GHZ G aAs M M IC Amplifier Preliminary Data Features • 12dB Gain and 17dBm P1dB - Excellent VSWR: 1.5:1 Typical - 5dB Noise Figure - Operates From Single 1SV Supply - Surface-Mountable Package i 'il i I— H i I I l! * Description Stanford Microdevices' SM M -8 08 is a gallium


    OCR Scan     		PDF SMM-808 17dBm 27dBm 200mW

    p1d AM

    Abstract: RW mmic
    Text: SMM-180 1.4-2.0 GHz, 1.5 Watt G aA s M M IC Amplifier Aprfl, 1995 Features - 25dB Gain with +/- 0.5dB Flatness - +32dBm Output Power at P1dB - 20% Power Added Efficiency - +41 dBm Output TOIP - CopperfTungsten Package Description Stanford Microdevices' SM M -180 is a high performance


    OCR Scan     		PDF SMM-180 32dBm 34dBm 1200mA. -180D p1d AM RW mmic

    sc 8256

    Abstract: SNA586 SNA-586
    Text: IS Stanford Microdevices Product Description Stanford Microdevices’ SNA-586 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. This amplifier provides 19dB of gain when biased at 80mA and 5.0V. External DC decoupling capacitors determine low frequency


    OCR Scan     		PDF SNA-586 SNA-500) SNA-586 sc 8256 SNA586

    SNA-486

    Abstract: SNA-487
    Text: Stanford Microdevices Product Description SNA-487 Stanford Microdevices’ SN A-487 is a G a A s monolithic broadband amplifier M M IC housed in a low-cost drop-in plastic package. This amplifier provides 13dB of gain when biased at 80mA and 5.0V, DC-8 GHz, Cascadable


    OCR Scan     		PDF 34dBm SNA-486. SNA-487 010i1 SNA-486 SNA-487