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    STMicroelectronics STAC4932B

    RF MOSFET 100V STAC244B
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    STAC4932B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STAC4932B STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANSISTOR RF MOSF N-CH STAC244B Original PDF

    STAC4932B Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B DocID17153

    MEC 1300

    Abstract: STAC4932 STAC4932B 1000WF
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B MEC 1300 STAC4932 1000WF

    MEC 1300

    Abstract: No abstract text available
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B STAC4932 MEC 1300

    STAC4932

    Abstract: STAC4932B 1715-3
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B STAC4932 1715-3

    Untitled

    Abstract: No abstract text available
    Text: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B DocID17153

    STAC4932

    Abstract: No abstract text available
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B STAC4932

    STAC4932

    Abstract: STAC4932B 1000wf st marking code
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10%


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B STAC4932 1000wf st marking code

    MEC 1300

    Abstract: 2x100mA STAC244F
    Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932B MEC 1300 2x100mA

    STAC4932

    Abstract: STAC4932B
    Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932B STAC4932