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    ST93C06C Search Results

    ST93C06C Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ST93C06C STMicroelectronics 256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C06CB1 SGS-Thomson EEPROM Serial Original PDF
    ST93C06CB1013TR STMicroelectronics SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM Original PDF
    ST93C06CB1013TR STMicroelectronics 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C06CB3 SGS-Thomson EEPROM Serial Original PDF
    ST93C06CB3013TR STMicroelectronics SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM Original PDF
    ST93C06CB3013TR STMicroelectronics 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C06CB6 SGS-Thomson EEPROM Serial Original PDF
    ST93C06CB6013TR STMicroelectronics 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C06CB6013TR STMicroelectronics SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM Original PDF
    ST93C06CM1 SGS-Thomson EEPROM Serial Original PDF
    ST93C06CM1013TR STMicroelectronics 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C06CM1013TR STMicroelectronics SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM Original PDF
    ST93C06CM3 SGS-Thomson EEPROM Serial Original PDF
    ST93C06CM3013TR STMicroelectronics 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C06CM3013TR STMicroelectronics SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM Original PDF
    ST93C06CM6 SGS-Thomson EEPROM Serial Original PDF
    ST93C06CM6013TR STMicroelectronics 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C06CM6013TR STMicroelectronics SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM Original PDF

    ST93C06C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ST93C06C

    Abstract: M93C06 ST93C06
    Text: ST93C06 ST93C06C 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


    Original     		PDF ST93C06 ST93C06C ST93C06 ST93C06C M93C06 M93C06

    ST93C06

    Abstract: ST93C06C AI00816B
    Text: ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit 16 x 16 or 32 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


    Original     		PDF ST93C06 ST93C06C ST93C06 ST93C06C ST93C06. AI00816B

    331 S

    Abstract: ST93C46 ST93C06 ST93C06C
    Text: ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit 16 x 16 or 32 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


    Original     		PDF ST93C06 ST93C06C ST93C06 ST93C06C ST93C06. 331 S ST93C46

    ST93C06

    Abstract: ST93C06C
    Text: ST93C06 ST93C06C SERIAL ACCESS MICROWIRE BUS 256 bit 16 x 16 or 32 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


    Original     		PDF ST93C06 ST93C06C ST93C06 ST93C06C ST93C06.

    AI00816B

    Abstract: No abstract text available
    Text: ST93C06 ST93C06C 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


    Original     		PDF ST93C06 ST93C06C ST93C06C M93C06 ST93C06. AI00816B

    TOP SIDE MARKING M27C512

    Abstract: No abstract text available
    Text: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


    Original     		PDF

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    M27C512 SGS-THOMSON

    Abstract: M2201 ST93C46
    Text: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


    Original     		PDF

    BV-1 501

    Abstract: mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics
    Text: QRR9704 QUALITY & RELIABILITY REPORT January 1997 to December 1997- EPROM, FLASH Memory, EEPROM and NVRAM Products INTRODUCTION ST Microelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		PDF QRR9704 BV-1 501 mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics

    MK48T08

    Abstract: mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64
    Text: QRR9802 QUALITY & RELIABILITY REPORT July 1997 to June 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		PDF QRR9802 MK48T08 mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64

    Untitled

    Abstract: No abstract text available
    Text: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


    Original     		PDF

    TOP SIDE MARKING M27C512

    Abstract: m27c512 equivalent 4Q96 M27128A M2716 M2732A M2764A QRR037 4Q96-1Q97 M27C256B datecode
    Text: QUALITY & RELIABILITY REPORT April 1996 to March 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


    Original     		PDF QRR037/0697 TOP SIDE MARKING M27C512 m27c512 equivalent 4Q96 M27128A M2716 M2732A M2764A QRR037 4Q96-1Q97 M27C256B datecode

    for atmel 416 24c16 an

    Abstract: low cost eeprom programmer circuit diagram 93C461 how to reset atmel 24c16 24w04 program 24c04 CHIP 8-PIN 24c16 93c566 24w02 93CS561 93C46A1
    Text: Non-Volatile Memory Products Non-Volatile Memory Products Package Dimensions Table of Contents EEPROM Standard Products Family . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .184


    Original     		PDF 64-Lead VEH64A for atmel 416 24c16 an low cost eeprom programmer circuit diagram 93C461 how to reset atmel 24c16 24w04 program 24c04 CHIP 8-PIN 24c16 93c566 24w02 93CS561 93C46A1

    misplaced Wire Bonds

    Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
    Text: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


    Original     		PDF

    M27C256B datecode

    Abstract: PART MARKING M27C512 M27C256B PART MARKING m27c512 equivalent M27C256 M27C512 marking M27128A M2716 M2764A QRR038
    Text: QUALITY & RELIABILITY REPORT July 1996 to June 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


    Original     		PDF

    M93C46BN1

    Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA


    Original     		PDF M2716-1F1 M2716-1F6 M2716F1 M2716F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-3F1 M2764A-1F1 M2764A-20F1 M93C46BN1 PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7

    Untitled

    Abstract: No abstract text available
    Text: / r : SGS-THOM SON * 7 # , H 0M ILI« M 0(g§ ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 or 32 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS


    OCR Scan     		PDF ST93C06 ST93C06C 150mil ST93C06 ST93C06C ST93C06, 00A12L

    Untitled

    Abstract: No abstract text available
    Text: ST93C06 ST93C06C SGS-THOMSON llDMJilLIlMWDÊi 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN CO • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION > DUAL ORGANIZATION: 1 6 x 1 6 or 3 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY


    OCR Scan     		PDF ST93C06 ST93C06C 150mil ST93C06 ST93C06Care M93C06 aST93C06C

    Untitled

    Abstract: No abstract text available
    Text: / = T S C S-TH O M SO N ^ 7 # . H0»iLi «K!10 g§ ST93C06 -. ST93C06C SERIAL ACCESS MICROWIRE BUS 256 bit (16 x 16 or 32 x 8 EEPROM DESCRIPTION The ST93C06 and ST93C06C are 256 bit Electri­ cally Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance


    OCR Scan     		PDF ST93C06 ST93C06C ST93C06 ST93C06C ST93C06.

    ST93C06

    Abstract: ST93C06C
    Text: SCS-THOMSON M g[l»i(gTMô m t. ST93C06 ST93C06C • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 or 32 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE


    OCR Scan     		PDF ST93C06 ST93C06C ST93C06 ST93C06C 007S014 ST93C06, 7T21237 QQ7201S

    Untitled

    Abstract: No abstract text available
    Text: /T T SGS-THOMSON ^7#. HDlg^OllLIgTOOIfSlDgi ST93C06 ST93C06C • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 1 6 x 1 6 or 3 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS > SELF-TIMED PROGRAMMING CYCLE with


    OCR Scan     		PDF ST93C06 ST93C06C ST93C06.

    93c06c

    Abstract: 93c06 st
    Text: ST93C06 ST93C06C ¿ = 7 SGS-THOMSON R Æ D ^ @ [iiL i g cô3^ ( s iia ( g s SERIAL ACCESS CMOS 256 bit (16 x 16 or 32 x 8) EEPROM • MINIMUM 1 MILLION ERASE/WRITE CYCLES, with OVER 10 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 1 6 x 1 6 or 3 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY PRO­


    OCR Scan     		PDF ST93C06 ST93C06C ST93C06C 013TR ST93C08CB1 93c06c 93c06 st

    ST93C06

    Abstract: ST93C06C
    Text: / ^ 7 S C S -TH O M S O N Ä 7#. ST93C06 ST93C06C [Mfl @^ I[LIgTlS(S R!lD(gS SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 o r 3 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY


    OCR Scan     		PDF ST93C06 ST93C06C 16x16 ST93C06C ST93C06. ST93C06,

    MK45H14

    Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
    Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .


    OCR Scan     		PDF M27C64A M27C256B M87C257 M27C512 M27V512 M27C1001 M27V101 M27C1024 M27C2001 M27V201 MK45H14 AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA