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    Abstract: No abstract text available
    Text: ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for


    Original     		PDF ST2341SRG ST2341SRG OT-23 -20V/-3 -20V/-2

    Untitled

    Abstract: No abstract text available
    Text: ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF ST2341S23RG ST2341S23RG OT-23-3L -20V/-3 30m-ohm -20V/-2 ST2341SRG3RG