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    C 1114 transistor

    Abstract: No abstract text available
    Text: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.


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    PDF QRB1113/1114 QRB1113/1114 000b33b C 1114 transistor

    QRB1113

    Abstract: LTA 703 S
    Text: REFLECTIVE OBJECT SENSORS OP T O E L E C T H 0 N l t S QRB1113/1114 PACKAGE DIMENSIONS DESCRIPTION The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing.


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    PDF QRB1113/1114 QRB1113/1114 QRB1113 LTA 703 S

    QRB1113

    Abstract: QRB1114
    Text: [*Q REFLECTIVE OBJECT SENSOR! QPTOELECTRQHICS QRB1113/11K DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared em itting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.


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    PDF QRB1113/11K QRB1113 QRB1114 ST2179

    transistor bI 240

    Abstract: QRB1113 qrb1114 D transistor sEC transistor 373
    Text: E9 REFLECTIVE OBJECT SENSORS Mw— OPTOELECTRONICS QRB1113/1114 DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.


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    PDF QRB1113/1114 QRB1113/1114 ST2179nt QRB1113 QRB1114 transistor bI 240 D transistor sEC transistor 373