sb 050 D 331
Abstract: Transistor sb 050 D
Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVE11233 PACKAGE DIMENSIONS 175 4 45’ L 250 (6 35 I_ — r* 331 (6 3S) .071 (1.70) J_ _ Lead spacing .300". Gap width of .150". Printed circuit board mounting. 2 mm aperture width. 350 <8 SB) MIN J_ _ _ •SEE NOTE 3
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QVE11233
QVE11233
ST2176
sb 050 D 331
Transistor sb 050 D
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Untitled
Abstract: No abstract text available
Text: [• T i SLOTTED OPTICAL SWITCH OPTOELECTRONICS Q VE11233 PACKAGE DIMENSIONS T h e Q V E 11233 is designed to allow the user m axim um •- 500 1 2 701 PIN 1 ^ ^ ^ - 1 > c 1 175 (4.45J 1 L .250 (6 35 DESCRIPTION flexibility in applications. Each switch consists of an
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VE11233
ST2176
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QVE11233
Abstract: SLOTTED OPTICAL SWITCH Dt3 diode
Text: [*0 SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVE11233 DESCRIPTIO N The QVE11233 is designed to allow the user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .150" 3.81 m m gap.
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QVE11233
QVE11233
ST2176
000b353
SLOTTED OPTICAL SWITCH
Dt3 diode
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Untitled
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH 0PTOELECT H011CS QVE11233 DESCRIPTION The QVE11233 is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .150" 3.81 mm gap. FEATURES
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H011C
QVE11233
QVE11233
ST2176
74bbA51
0D0b354
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QVE11233
Abstract: controlled gap 62 MW111
Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVE11233 P A C K A G E D IM E N SIO N S D ESC R IPT IO N Th e QVE11233 is designed to allow the user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor
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QVE11233
QVE11233
ST2176
controlled gap 62
MW111
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