2N3013
Abstract: 2n3013 jan 2N3013 JANTX Saturated
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 8 August 2008. MIL-PRF-19500/287G 8 May 2008 SUPERSEDING MIL-PRF-19500/287F 19 July 2002 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, SWITCHING,
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MIL-PRF-19500/287G
MIL-PRF-19500/287F
2N3013,
MIL-PRF-19500.
2N3013
2n3013 jan
2N3013 JANTX
Saturated
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Untitled
Abstract: No abstract text available
Text: E U AIGaAs INFRARED EMITTING DIODE F5G1 - t î Ef P - » The F5Q1 is an 880nm LED encapsulated in a clear, wide angle, sideiooker package. [-f- G re e n fri Color ¿fc- 3 I P Code T SCCÎION x -x LEAD PROFILE * Good apücaf to mechanical alignment SEATING
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880nm
ST1334
100mA
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ST1035
Abstract: No abstract text available
Text: [*Q GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS DESCRIPTION The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. — D— 1 E f H—1 r\ » ^ Code T SECTION X-X LEAD PROFILE 1 _ L If FEATURES 1 1 _ i Good optical to mechanical alignment
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940nm
ST1334
ST1033
ST1037
ST1035
ST1036
ST1035
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Untitled
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE ÜPMUCTRSRiCS F5F1 The F5F1 is a 940nm LED encapsulated in a clear, wide angle, stdeiooker package. SECTION X~X LEAD PROFILÉ * Good optical to mechanical alignment • Mechanically and wavelength matched to the L14Q series phototransistor
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940nm
ST1334
ST1033
ST1037
-01SPLACEM
8H036
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Untitled
Abstract: No abstract text available
Text: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5G1 The F5G1 is an 880nm LED encapsulated in a clear, wide angle, sidelooker package. — D— * ï E f — I bi 1- 1 - 1 j-1 Green H? Color '¿b-— Code SECTION x -x LEAD PROFILE a I •* T i «•
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OCR Scan
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880nm
ST1334
ST1041
ST1046
ST1042
ST1045
ST1043
74bbflSl
ST1044
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