st-si-uk 4
Abstract: 0921011
Text: Extract from the online catalog ST-SI-UK 4 Order No.: 0921011 Fuse plug, Nominal current: 6.3 A, Color: black Product notes WEEE/RoHS-compliant since: 01/01/2003 Commercial data
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CL-2009)
st-si-uk 4
0921011
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PDINP075500A-0-0-01
Abstract: pigtail pin photodiode ge Si apd photodiode APDS PDINP075100A PDSIU500ST73-T-0 0/PDINP075500A-0-0-01
Text: PD LD Inc PDXX Series PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum from 400 to 1100nm, InGaAs is
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1100nm,
1650nm
2100nm.
100micron.
PDINP075500A-0-0-01
pigtail pin photodiode ge
Si apd photodiode
APDS
PDINP075100A
PDSIU500ST73-T-0
0/PDINP075500A-0-0-01
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rly1
Abstract: No abstract text available
Text: GSM-AUTO GSM Cont roller User m anual INDEX Descript ion. . . . . . . . . . . . . 2 Preparing t he SI M card. . . . . . . . . . . 3 I nst allat ion. . . . . . . . . . . . . . 4
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Untitled
Abstract: No abstract text available
Text: Laser Diodes Standard-Area Silicon PIN Photodiodes 500µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs in fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum
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1100nm,
ld/si-pin-pd-500um-high-speed
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 500um General PurposePhotoDiodes Silicon PhotoDiodes 1 mmDiameter Diameter InGaAs PD-LD Inc. offers a 500um diameter photoconductive Silicon Photodiode suitable for applications requiring response times of up to 6nsec. The planar diffused device
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500um
500um
350nm
1100nm
105/125MMF
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InGaAs APD photodiode 1550
Abstract: InGaas PIN photodiode, 1550 inGaAs photodiode 1550 InGaAs apd photodiode InGaAs pin
Text: PDINBU 45 UM DETECTORS 1100nm to 1650 nm InGaAs PIN Photodiodes PDINBU045G00A-0-0-01 PD-LD offers InGaAs PIN photodiodes with a 45 micron diameter active area that are ideal for use in Channel Monitoring Applications. The detectors exhibit their intrinsically high optical responsivity
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1100nm
PDINBU045G00A-0-0-01
InGaAs APD photodiode 1550
InGaas PIN photodiode, 1550
inGaAs photodiode 1550
InGaAs apd photodiode
InGaAs pin
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PDINP075ST83-W-0
Abstract: PDINP075SC23-W-0 PDINP075FC13-W-0 laser Silicon Detector
Text: InGaAs PIN Photodiodes 75 µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our PDINP Series are 75um diameter InGaAs PIN photodiodes thar are optimal from 1100 to 1650nm. These devices are available in fiber pigtailed
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1650nm.
PDINP075ST83-W-0
PDINP075SC23-W-0
PDINP075FC13-W-0
laser Silicon Detector
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diode code m10
Abstract: avalanche photodiodes 1650nm APD 10ghz
Text: Detectors for Fiber Optics: InGaAs Avalanche Photodiodes 80 µm InGaAs APDs PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate front-illuminated 80 micron diameter active area
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Ge APD
Abstract: PD-LD analog laser diode 6 GHz
Text: Analog InGaAs PIN Detectors Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 70 micron diameter active area detector that responds optimally to both 1310 and 1550
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FOTP-188
Abstract: FOTP-34 7501450
Text: Fiber Optic Products Catalog Switches Ruggedized Multimode Switches Refractive Plate Switch Part Number 6588871-1 Product Facts: No optical path interruption @200 G’s for 8 ms • Successfully passed MIL_S_901D Navy Heavyweight Shock Test (Barge Test)
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5/125um
19-inch
FOTP-188
FOTP-34
7501450
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MT48LC16M16A2P-75 IT:D
Abstract: No abstract text available
Text: Drehgeber und Winkelsensorik Selection Guide Inkrementale Drehgeber
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PDSIU500FC13-W-0
Abstract: PD-LD PDSIU500200A -0-0-01
Text: PD LD Inc PDSI Series Detectors for Fiber Optics Silicon PIN Diodes PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs in fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum from
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1100nm,
100micron.
PDSIU500FC13-W-0
PDSIU500FC13-W-0
PD-LD
PDSIU500200A -0-0-01
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BD 509 CONNECTOR
Abstract: PDINP075100A Flexcore PDINP075500A-0-0-01
Text: PD LD Inc PDINP Series PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our PDINP Series are 75um diameter InGaAs PIN photodiodes thar are optimal from
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1650nm.
BD 509 CONNECTOR
PDINP075100A
Flexcore
PDINP075500A-0-0-01
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k3607
Abstract: k3601 k3605 ZK3610-00 k3603 P55i
Text: Customer Information Sheet D R A W I N G No.: S H E E T 2 OF 2 K3 60 I - 9 I | IF IN D O U B T SEE C O M P O N E N T S P E C I F I C A T I O N C 0 3 4 X X FOR A S S E M B L Y - ASK | | NOT T O S C A L E | THIRD ANGLE PROJECTION INSTRUCTIONS AND TECHNICAL
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K360I-9I
C034XX
000MO
I00MO
UL94V-0,
k3607
k3601
k3605
ZK3610-00
k3603
P55i
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EB-230
Abstract: PA603T mpa603t 048164 IC830
Text: MOS MWRlto MOS Field Effect Transistor «PA603T U MOS F E T 6 fc> 2 0 S&) P ¿¿PA603T (ä, M OS F E T £ 2 H Jj& f ijl Ltz l ~ £ f 7f £ H I (^ -fï ‘ mm) & 4# o SC-59 ¿[p] L'+f'f Xcos'?"/ Y — 'si MOS F E T £ 2 H i& f lji 0.95 o ¿/PA602T t 3 > 7 ° ij / 's 9 ') T"i£ffl^Tit£
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uPA603T
PA603T
SC-59
/PA602T
EB-230
PA603T
mpa603t
048164
IC830
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2SB737
Abstract: 2SD786 2SD786S 89ji 2Sd786 rohm 2SB737 rohm
Text: ROHM CO LTD h7 ~ 4QE D 7 a a a ci c ':i o o o s a i a a / T ransistors 2SD786/2SD786S ' 2SD786 2SD786S m rh h 7 ^ 2 7 -0 °) V lJ - 1> K7 > V ^ iW Low Noise Amp. Epitaxial Planar NPN Silicon Transistors 1W ff^ > £ IS l/D im e n s io n s U n it: mm) m r a t' is tttm o
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2SD786
2SD786S
2SD786/2SD786S
Rg-100,
55nV//Tir
2SB737
55nVVHz
2SB737.
l31/Dimensions
2SD786
2SD786S
89ji
2Sd786 rohm
2SB737 rohm
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Untitled
Abstract: No abstract text available
Text: IF IN DOUBT - ASK NO T TO SCALE TH IRD ANGLE PROJECTION ALL DIM ENSIO NS IN mm H SD C AR D PIN DESIGN Pin No. 1# Name Description CD/DAT3 Card detect/Data I/O 2# CMD Command 3# VSS1 Ground 4# VDD Power 5# CLK Clock 6# VSS2 Ground 7# DATO Data I/O 8# DAT1
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250VRM
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PA1552
Abstract: PA1552BH YTYN astex wv471 UV 471
Text: ~ r — $ • v — ï^ H I C o m p o u n d Field Effect P o w e r T ran sisto r uPA1552B t '^ / N 0r7 - M O S FET 7 U ' f ^ 'y 3 ~ > ^7 ^ I l f f i AîPA1552BIÎ, N ^ - ^ J H Ê É S / ^ - M O S FET77 U -f ? * m Z ' f y ï X f & f e t f f è t lT 4b 'U , g -ilT 7?
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juPA1552B
PA1552BÃ
04VIBIÃ
PA1552BH
G10599JJ2V0DS00
PA1552B
PA1552
YTYN
astex
wv471
UV 471
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Untitled
Abstract: No abstract text available
Text: DRAWING No.: M 8 0 - 4 T 10 6 0 5 F 9 - 0 I - 3 2 1 - 0 1 - 3 2 1 Customer Informatic>n Sheet SHEET 2 OF 2 1 IF IN D O U B T - ASK i i NOT TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K
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Untitled
Abstract: No abstract text available
Text: D R A W I N G No.: M 8 0 - 5 T I 0 4 0 5 M I -0 3 - 3 3 1 - 0 0 - 0 0 0 Customer Information Sheet rwi S H E E T 2 OF 2 IF IN D O U B T - ASK NOT TO S CA L E THIRD ANGLE PROJECTION ALL D I M E N S I O N S IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K
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M80-5TI0405M1
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Untitled
Abstract: No abstract text available
Text: Customer Informatic>n Sheet DRAWING N o.: M 8 0 - 5 T 10 8 0 5 M 3 - 0 4 - 3 3 2 - 0 0 - 0 0 0 SHEET 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K
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M80-5TI0805M3-04-332-00-000
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UPA1400H
Abstract: PA1400H FSV 052 MCDN WS300 MPA1453H 13X26X4 WS-300
Text: NEC fë'g- y < r y - Compound Pow er Transistor ¿ ¿ P A 1 4 5 3 H P N P i b 0^ + '> 7 ; H ' > i j 3 > h 7 > '> X ^ 7 U -f i i f f i PN P S ilic o n E p ita x ia l T r a n s i s t o r H ig h S p e e d S w it c h in g In d u s tr ia l U s e D C-D C 3 <r>Y 7 <
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PA1453H
13X26X4
UPA1400H
PA1400H
FSV 052
MCDN
WS300
MPA1453H
WS-300
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2SC2003
Abstract: transistor 2sc2002 2SC2002 2SA953 PA33 PT600 npn transistor w5
Text: NEC j m * = r i \ r r x y ' j 3 > h ^ X ^ Silicon T ran sisto rs A 2SC2002,2003 NPN Silicon Epitaxial Transistor Audio Frequency Am plifier ftM m / « « /F E A T U R E S PACKAGE D IM ENSIO NS Unit : mm o t — r"4 Yv4 0 2SA953, 9 5 4 ¿ 3 > 7 °iJ (, O
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2SA953,
954tn
2SC2002
2SC2003
I-150
CycleS50
transistor 2sc2002
2SA953
PA33
PT600
npn transistor w5
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smd transistor NG
Abstract: No abstract text available
Text: P D -9 1 4 3 3 A International Rectifier I R IRHNA9160 IRHNA93160 REPETITIVE AVALANCHE AND dv/dt r a t e d HEXFET TRANSISTOR P-CHANNEL RADHARD -100 Volt, 0.068W, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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few90245,
smd transistor NG
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