MYS 99
Abstract: STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics
Text: AN926 Application note Brand traceability Introduction To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a new marking and traceability scheme due to the sizes
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AN926
MYS 99
STMicroelectronics marking code date
MYS 99 STMicroelectronics
Date Code Marking STMicroelectronics
STMicroelectronics date code format
st marking code
st MYS 99
stmicroelectronics assembly site date code format
LOT code stmicroelectronics
marking code stmicroelectronics
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Untitled
Abstract: No abstract text available
Text: STS8C5H30L N-channel 30 V, 0.018 Ω typ., 8 A, P-channel 30 V, 0.045 Ω typ., 5 A Power MOSFET in a SO-8 package Datasheet - production data Features Order code Channel VDS 5 N 8 STS8C5H30L 30 V P RDS on max ID 0.022 Ω 8A 0.055 Ω 5A • Conduction losses reduced
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STS8C5H30L
DocID10809
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Untitled
Abstract: No abstract text available
Text: T H I R DA N G L EP R O J E C T I O NI ALTERATION 1 SS U E ITEM CODE ECWF2W564JA 1 / 2W684JA 1 / 2W824JA { { 2Wl05JA { { 2W125JA { { 2W155JA 2W185JA { { 2W225JA { 2W275JA { { 2W335JA ( { 2W395JA 2W475JA { { ( { CAP DIMENSIONS VOLUME MARKING Note F T H
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Untitled
Abstract: No abstract text available
Text: STL4N10F7 N-channel 100 V, 0.062 Ω typ., 4.5 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 2 Order code VDS RDS on max ID STL4N10F7 100 V 0.07 Ω 4.5 A • N-channel enhancement mode
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STL4N10F7
DocID023898
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MYS 99
Abstract: STMicroelectronics date code format STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics marking code AN926 STMicroelectronics marking code date diode soic date code stmicroelectronics INTEGRATED CIRCUIT DATE code stmicroelectronics
Text: AN926 APPLICATION NOTE Brand Traceability with for NVRAM Products INTRODUCTION To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a
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AN926
MYS 99
STMicroelectronics date code format
STMicroelectronics marking code date
MYS 99 STMicroelectronics
Date Code Marking STMicroelectronics
STMicroelectronics marking code
AN926
STMicroelectronics marking code date diode
soic date code stmicroelectronics
INTEGRATED CIRCUIT DATE code stmicroelectronics
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WFA105J
Abstract: qaf 212 WFA225J
Text: i H I R DA N G L EP R O J E C T I O NI ALTERATION I SS U E ITEM CODE ECWF2W564JAC 1 1 2W684JAC 1 1 2W824JAC 1 1 2Wl05JAC 1 1 2W125JAC 1 1 2W155JAC 1 1 2W185JAC 1 1 2W225JAC 1 1 2W275JAC 2W335JAC 1 1 2W395JAC 1 1 2W475JAC CAP DIMENSIONS VOLUME MARKING Note
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WFA225K
0053J-J-E
WFA105J
qaf 212
WFA225J
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Untitled
Abstract: No abstract text available
Text: STF140N6F7, STH140N6F7-2, STP140N6F7 N-channel 60 V, 0.0025 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFETs in TO-220FP, H2PAK-2 and TO-220 packages Datasheet - target specification Features Order codes 1 2 STH140N6F7-2 1 60 V 0.003 Ω STP140N6F7
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STF140N6F7,
STH140N6F7-2,
STP140N6F7
O-220FP,
O-220
STH140N6F7-2
STF140N6F7
O-220FP
O-220
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qaf 212
Abstract: WFA225K
Text: T H I R DA N G L EP R O J E C T I O N I ALTERATION I SS U E ITEM CODE ECWF2Wl04JAB 1 2W124JAB 1 1 2W154JAB 1 2W184JAB 1 2W224JAB 1 2W274JAB H 2W334JAB 1 2W394JAB 1 1 2W474JAB 1 2W564JAB 1 1 2W684JAB 1 2W824JAB 1 2Wl05JAB H 2W125JAB 2W155JAB 1 2W185JAB 1 2W225JAB
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WFA105K
WFA225K
8004J-J-E
qaf 212
WFA225K
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5N60M
Abstract: No abstract text available
Text: STD5N60M2, STP5N60M2, STU5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes 3 1 VDS @ TJmax RDS on max ID 650 V 1.4 Ω 3.7 A STD5N60M2
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STD5N60M2,
STP5N60M2,
STU5N60M2
O-220
STD5N60M2
STP5N60M2
O-220
DocID025318
5N60M
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Untitled
Abstract: No abstract text available
Text: STH400N4F6-2, STH400N4F6-6 Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A STripFET VI DeepGATE™ Power MOSFETs Datasheet - production data Features Order codes TAB VDS RDS on max ID 40 V 1.15 mΩ 180 A TAB STH400N4F6-2 STH400N4F6-6 2 7 3 1 1 H2PAK-2
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STH400N4F6-2,
STH400N4F6-6
STH400N4F6-2
AEC-Q101
DocID023429
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Untitled
Abstract: No abstract text available
Text: STL18N3LLH7 N-channel 30 V, 0.0034 Ω typ., 18 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - target specification Features Order code VDS RDS on max ID STL18N3LLH7 30 V 0.0045 Ω 18 A • Very low on-resistance
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STL18N3LLH7
AM15810v1
DocID025088
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STW19NM50N
Abstract: No abstract text available
Text: STF19NM50N, STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω typ., 14 A MDmesh II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes RDS on max ID 550 V 0.25 Ω 14 A STF19NM50N 3 1 VDS @ TJmax 3 2 1
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STF19NM50N,
STP19NM50N,
STW19NM50N
O-220FP,
O-220
O-247
STF19NM50N
O-220FP
O-220
STP19NM50N
STW19NM50N
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STH240N75F3-2
Abstract: 240N75F3
Text: STH240N75F3-2, STH240N75F3-6 N-channel 75 V, 2.6 mΩ typ., 180 A STripFET III Power MOSFET in H²PAK-2 and H²PAK-6 packages Datasheet − production data Features Order code VDSS RDS on max. ID 75 V < 3.0 mΩ 180 A STH240N75F3-2 STH240N75F3-6 TAB 7
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STH240N75F3-2,
STH240N75F3-6
STH240N75F3-2
240N75F3
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Untitled
Abstract: No abstract text available
Text: STF40N60M2, STFI40N60M2, STFW40N60M2 N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.088 Ω 34 A STF40N60M2
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STF40N60M2,
STFI40N60M2,
STFW40N60M2
O-220FP,
STF40N60M2
STFI40N60M2
O-220FP
O-281)
DocID026364
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Untitled
Abstract: No abstract text available
Text: STN1NK60Z, STQ1NK60ZR-AP N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features VDS RDS on max ID 600 V 15 Ω 0.3 A Order codes STN1NK60Z 4 1 2 STQ1NK60ZR-AP 3 SOT-223
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STN1NK60Z,
STQ1NK60ZR-AP
OT-223
STN1NK60Z
OT-223
AM01476v1
DocID9509
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Untitled
Abstract: No abstract text available
Text: STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Qg Power MOSFET in TO-220, IPAK and TO-247 packages Datasheet − preliminary data TAB Features TAB Order codes 3 VDS @ TJmax RDS on max ID 650 V 0.38 Ω 11 A 2 1
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STP13N60M2,
STU13N60M2,
STW13N60M2
O-220,
O-247
STP13N60M2
STU13N60M2
O-220
O-247
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ISD25
Abstract: STB18NF30
Text: STB18NF30 N-channel 330 V, 18 A STripFET II Power MOSFET in D²PAK package Preliminary data Features Order code VDSS RDS on max. ID STB18NF30 330 V 180 mΩ 18 A TAB • 100% avalanche tested ■ 175 °C junction temperature 3 1 Applications ■ D²PAK
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STB18NF30
ISD25
STB18NF30
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Untitled
Abstract: No abstract text available
Text: STD80N4F6, STU80N4F6 N-channel 40 V, 5.5 mΩ typ., 80 A STripFET VI DeepGATE™ Power MOSFET in DPAK and IPAK packages Datasheet − production data Features Order codes STD80N4F6 TAB TAB STU80N4F6 3 3 2 1 1 DPAK VDS RDS on max 6.0 mΩ 40 V ID 80 A 6.3 mΩ
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STD80N4F6,
STU80N4F6
STD80N4F6
DocID023839
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Untitled
Abstract: No abstract text available
Text: STL75N8LF6 N-channel 80 V, 5.6 mΩ, 18 A, PowerFLAT 5x6 STripFET™ VI DeepGATE™ Power MOSFET Features Order code VDSS RDS on max ID STL75N8LF6 80 V < 7.4 mΩ 18 A (1) 8 5 1. The value is rated according Rthj-pcb 1 • RDS(on) * Qg industry benchmark
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STL75N8LF6
STL75N8LF6
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Untitled
Abstract: No abstract text available
Text: STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS on max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω
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STF1N105K3,
STFW1N105K3,
STP1N105K3
O-220FP,
O-220
STF1N105K3
STFW1N105K3
O-220FP
O-220
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STB120N4LF6
Abstract: STD120N4LF6 STD120
Text: STB120N4LF6 STD120N4LF6 N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max ID STB120N4LF6 40 V 4.0 mΩ 80 A STD120N4LF6 40 V 4.0 mΩ 80 A 3 1 • Logic level drive ■ 100% avalanche tested
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STB120N4LF6
STD120N4LF6
STB120N4LF6
STD120N4LF6
STD120
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Untitled
Abstract: No abstract text available
Text: STL120N2VH5 N-channel 20 V, 0.002 Ω, 28 A STripFET V Power MOSFET in PowerFLAT™ 5x6 package Features Order code VDSS RDS on max ID STL120N2VH5 20 V < 0.003 Ω 28 A • Improved die-to-footprint ratio ■ Very low profile package ■ Very low thermal resistance
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STL120N2VH5
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34N65M5
Abstract: STB-34 stb34
Text: STx34N65M5 N-channel 650 V, 0.098 Ω, 29 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages Preliminary data Features Order code TAB VDSS @ TJmax RDS on max 2 ID 3 1 D2PAK STB34N65M5 3 TAB 1 TO-220FP STF34N65M5 STFI34N65M5
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STx34N65M5
O-220FP,
O-220
O-247
STB34N65M5
STF34N65M5
STFI34N65M5
STP34N65M5
STW34N65M5
O-220FP
34N65M5
STB-34
stb34
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STB120N4
Abstract: STD120N4F6 STD120n4 STD120
Text: STB120N4F6 STD120N4F6 N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max. ID STB120N4F6 40 V 4 mΩ 80 A (1) STD120N4F6 40 V 4 mΩ 80 A (1) 3 1. Current limited by package • Standard threshold drive
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STB120N4F6
STD120N4F6
STD120N4F6
120N4F6
STB120N4
STD120n4
STD120
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