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    SD2931-10

    Abstract: SD2931 JESD97 VK200 Bead 220 ohm 2.5A
    Text: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931 JESD97 VK200 Bead 220 ohm 2.5A

    Untitled

    Abstract: No abstract text available
    Text: SD2931-12MR 150 W – 50 V moisture resistant HF/VHF DMOS transistor Datasheet - production data Description The SD2931-12MR is a gold metallized Nchannel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V DC large


    Original     		PDF SD2931-12MR SD2931-12MR SD2931 SD2931 M174MR DocID023650

    SD2931-11

    Abstract: Bead 220 ohm 2.5A SD2931 VK200 17329
    Text: SD2931-11 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-11 SD2931-11 SD2931 SD2931 Bead 220 ohm 2.5A VK200 17329

    Bead 220 ohm 2.5A

    Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w
    Text: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931 Bead 220 ohm 2.5A VK200 marking code transistor ND sd2931-10w

    Untitled

    Abstract: No abstract text available
    Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931

    Arco 423

    Abstract: choke vk200 sd2931-10w
    Text: SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet — production data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower


    Original     		PDF SD2931-10 SD2931-10 SD2931 Arco 423 choke vk200 sd2931-10w

    sd2931-10w

    Abstract: marking code oz 09-Sep-2004
    Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-10 SD2931-10 SD2931 sd2931-10w marking code oz 09-Sep-2004

    Dow Corning 340

    Abstract: SD2931 TSD2931 FS 0245
    Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 14 dB GAIN @175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS


    Original     		PDF SD2931 SD2931 TSD2931 Dow Corning 340 TSD2931 FS 0245

    Untitled

    Abstract: No abstract text available
    Text: SD2951-10 250 W, 50 V HF/VHF DMOS transistor Datasheet - target specification Description The SD2951-10 is an N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS ON than the industry standard,


    Original     		PDF SD2951-10 SD2951-10 SD2931-10 DocID025130

    SD2941-10

    Abstract: EE-19 transformer SD2931-10 VK200
    Text: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower


    Original     		PDF SD2941-10 175MHz SD2941-10 SD2931-10. EE-19 transformer SD2931-10 VK200

    Untitled

    Abstract: No abstract text available
    Text: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2941-10 SD2941-10 SD2931-10

    SD2941-10

    Abstract: VK200 r.f choke SD2941 st marking EE code ST SD2931
    Text: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2941-10 SD2941-10 SD2931-10 VK200 r.f choke SD2941 st marking EE code ST SD2931

    sd2931 fm

    Abstract: SD2933 SD2931-10 AN1256 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
    Text: AN1256 Application note High-power RF MOSFET targets VHF applications Introduction The SD2933, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family. The packaged version is shown in Figure 1. The SD2933 is a single-ended, 50 V, 300 W, gold


    Original     		PDF AN1256 SD2933, SD2933 sd2931 fm SD2931-10 AN1256 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

    SD2931

    Abstract: VK200 resistor 680 ohm
    Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for


    Original     		PDF SD2931 SD2931 VK200 resistor 680 ohm

    RF POWER TRANSISTOR

    Abstract: resistor 680 ohm
    Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931 SD2931 RF POWER TRANSISTOR resistor 680 ohm

    EE-19 transformer

    Abstract: Power Transformer EE-19 SD2931 VK200 resistor 680 ohm 25 ohm semirigid
    Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz M174 epoxy sealed DESCRIPTION The SD2931 is a gold metallized N-Channel MOS


    Original     		PDF SD2931 SD2931 EE-19 transformer Power Transformer EE-19 VK200 resistor 680 ohm 25 ohm semirigid

    resistor 680 ohm

    Abstract: No abstract text available
    Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for


    Original     		PDF SD2931 SD2931 resistor 680 ohm

    ECG transistor replacement guide book free

    Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
    Text: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a


    Original     		PDF UG-309 UG-201 UG-349 UG-1034 UG-146 UG-83 UG-318 UG-273 UG-255 ECG transistor replacement guide book free ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673

    300 to 50 Ohm RF transformer

    Abstract: MHz-150W resistor 680 ohm
    Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931-10 SD2931-10 SD2931 300 to 50 Ohm RF transformer MHz-150W resistor 680 ohm

    uhf 150w mosfet

    Abstract: SD2931 SD2931-10 TSD2931-10 VK200 resistor 330 Ohm
    Text: SD2931-10  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA ν ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 14 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931 uhf 150w mosfet TSD2931-10 VK200 resistor 330 Ohm

    resistor 680 ohm

    Abstract: Power Transformer EE-19 SD2931-10 EE-19 transformer SD2931 VK200 rf transformer 50 ohm to 0.1 ohm SCHEMATIC POWER SUPPLY WITH mosfet
    Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931 resistor 680 ohm Power Transformer EE-19 EE-19 transformer VK200 rf transformer 50 ohm to 0.1 ohm SCHEMATIC POWER SUPPLY WITH mosfet

    Power Transformer EE-19

    Abstract: resistor 680 ohm EE-19 transformer SD2931-10 vk200 rf choke SD2931 VK200
    Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931 Power Transformer EE-19 resistor 680 ohm EE-19 transformer vk200 rf choke VK200

    RF POWER TRANSISTOR

    Abstract: arco capacitors choke vk200 SD2931 SD2931-10 VK200
    Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931 RF POWER TRANSISTOR arco capacitors choke vk200 VK200

    resistor 680 ohm

    Abstract: SD2931
    Text: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931-10 SD2931-10 SD2931 resistor 680 ohm