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    ST MOSFET 5N20V Search Results

    ST MOSFET 5N20V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    ST MOSFET 5N20V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5n20v

    Abstract: st mosfet 5n20v Part Marking STMicroelectronics TSSOP8 JESD97 STC5NF20V
    Text: STC5NF20V N-channel 20V - 0.030Ω - 5A - TSSOP8 2.7V-drive STripFET II Power MOSFET Features Type VDSS RDS on ID STC5NF20V 20V < 0.040 Ω (@ 4.5 V) < 0.045 Ω (@ 2.7 V) 5A • Ultra low threshold gate drive (2.7V) ■ Standard outline for easy automated surface


    Original     		PDF STC5NF20V 5n20v st mosfet 5n20v Part Marking STMicroelectronics TSSOP8 JESD97 STC5NF20V

    5n20v

    Abstract: st mosfet 5n20v STC5NF20V JESD97
    Text: STC5NF20V N-channel 20V - 0.030Ω - 5A - TSSOP8 2.7V-drive STripFET II Power MOSFET Features Type VDSS RDS on ID STC5NF20V 20V < 0.040 Ω (@ 4.5 V) < 0.045 Ω (@ 2.7 V) 5A • Ultra low threshold gate drive (2.7V) ■ Standard outline for easy automated surface


    Original     		PDF STC5NF20V 5n20v st mosfet 5n20v STC5NF20V JESD97