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    ST MICROELECTRONICS BIPOLAR TRANSISTOR Search Results

    ST MICROELECTRONICS BIPOLAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    ST MICROELECTRONICS BIPOLAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    L4960 NOTE

    Abstract: transistor L7805 ic l7805 l7805 linear 2X1N4001 L4960 L6217 l7805 L4940 L4941
    Text: APPLICATION NOTE VERY LOW DROP REGULATORS ENHANCE SUPPLY PERFORMANCE By Paolo ANTONIAZZI an d Arturo W OL FSGRUBER Standard three-terminal voltage regulator ICs use an NPN transistor as the series pass element,so the input-output voltage drop is 1.5V-2V. Low dropout


    Original     		PDF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    st microelectronics smd zener

    Abstract: OPA71 STKM2000 industrial rpm sensor capacitive circuit schematic st microelectronics smd diode DEVICE SILICON TWIN TRANSISTOR zener diode from st microelectronics Schottky diode Die flip chip schottky transistor spice
    Text: STKM2000 SERIES  2 µ/2 POLY/2 METAL BiCMOS MIXED ANALOG-DIGITAL STANDARD CELLS • ■ ■ ■ ■ ■ ■ ■ ADVANCED BICMOS 2 µ/2 POLY/ 2 METAL PROCESS TWIN TUB PROCESS HIGH LATCH-UP IMMUNITY POWER SUPPLY : MAXIMUM RATING : -0.5V TO 12V OPERATING CONDITIONS : 3V TO 10V


    Original     		PDF STKM2000 st microelectronics smd zener OPA71 industrial rpm sensor capacitive circuit schematic st microelectronics smd diode DEVICE SILICON TWIN TRANSISTOR zener diode from st microelectronics Schottky diode Die flip chip schottky transistor spice

    transistor AE code PNP smd

    Abstract: OPA71 cmos opamp OPA41 5 STKM2000 smd transistor code SG
    Text: STKM2000 SERIES 2 µ/2 POLY/2 METAL BiCMOS MIXED ANALOG-DIGITAL STANDARD CELLS • ■ ■ ■ ■ ■ ■ ■ ADVANCED BICMOS 2 µ/2 POLY/ 2 METAL PROCESS TWIN TUB PROCESS HIGH LATCH-UP IMMUNITY POWER SUPPLY : MAXIMUM RATING : -0.5V TO 12V OPERATING CONDITIONS : 3V TO 10V


    Original     		PDF STKM2000 transistor AE code PNP smd OPA71 cmos opamp OPA41 5 smd transistor code SG

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    BUV298V

    Abstract: No abstract text available
    Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:


    Original     		PDF BUV298V BUV298V

    BUT30V

    Abstract: BUT30
    Text: BUT30V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:


    Original     		PDF BUT30V BUT30V BUT30

    EIA-625

    Abstract: ecl 10K signetics LUCENT InGaAs 1345FMPC GR-253-CORE TR-NWT-000468 pin optical fiber lucent DS99-073LWP
    Text: Data Sheet January 2000 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks ■ High-speed data communications Description


    Original     		PDF 1345-Type 20-pin, 20-pin GR-253-CORE) DS00-099OPTO DS99-071LWP) EIA-625 ecl 10K signetics LUCENT InGaAs 1345FMPC GR-253-CORE TR-NWT-000468 pin optical fiber lucent DS99-073LWP

    Bipolar Junction Transistor

    Abstract: AUK Semiconductor ic 805 transistor k 265 transistor 305
    Text: New Product Announcement April 2002 Introducing 1Amp Bipolar Junction Transistor in SOT-23 Surface Mount Package: MMBT123S A SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 G D 0.89 1.05 H E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10


    Original     		PDF OT-23 MMBT123S OT-23 STD123S BC818 BCW65 BCW65C BC818, MMBT123S Bipolar Junction Transistor AUK Semiconductor ic 805 transistor k 265 transistor 305

    igbt dimmer

    Abstract: IGBT light DIMMER "reverse phase control" igbt dimmer reverse phase control igbt dimmer DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs light dimmer igbt STGP10N50 AN486 topologies pulse transformer driver IGBT APPLICATION LC filter dimmer Triac
    Text: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles


    Original     		PDF

    st microelectronics ignition

    Abstract: ST901T ignition coil npn power darlington
    Text: ST901T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON • ■ ■ ■ HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE HIGH DC CURRENT GAIN APPLICATION ■ HIGH RUGGEDNESS ELECTRONIC IGNITION FOR SMALL ENGINES


    Original     		PDF ST901T ST901T O-220 O-220 st microelectronics ignition ignition coil npn power darlington

    triac gate drive circuit

    Abstract: IGBT light DIMMER igbt dimmer IGBT/MOSFET Gate Drive driving mosfet/igbt with pulse transformer driver "reverse phase control" igbt dimmer TRIAC dimmer control an5183 reverse phase control igbt dimmer ZENER DIODE t2
    Text: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles


    Original     		PDF

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    Toshiba thyristors

    Abstract: bosch motorola 002X5 Flash 1987 delco radio Delco
    Text: SGS-THOMSON Microelectronics  pre98whi - 1 - March 17 MISSION To offer strategic independence to our partners worldwide, as a profitable and viable broad range semiconductor supplier.  pre98whi - 2 - March 17 SGS-THOMSON : A GLOBAL SEMICONDUCTOR COMPANY


    Original     		PDF pre98whi Toshiba thyristors bosch motorola 002X5 Flash 1987 delco radio Delco

    IBM ASIC Products

    Abstract: nokia 2110 Dataquest
    Text: SGS-THOMSON Microelectronics  pre98whi - 1 - March 17 MISSION To offer strategic independence to our partners worldwide, as a profitable and viable broad range semiconductor supplier. pre98whi - 2 - March 17  SGS-THOMSON : A GLOBAL SEMICONDUCTOR COMPANY


    Original     		PDF pre98whi IBM ASIC Products nokia 2110 Dataquest

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    ESM4045DV

    Abstract: 0322AG
    Text: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM4045DV ESM4045DV 0322AG

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 5 •y Ï . A M 8 1 7 1 9 -0 4 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A ■ ■ » ■ ■ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF AM81719-040

    .00p

    Abstract: No abstract text available
    Text: r z j SGS-THOMSON SD1894 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . • . ■ . CLASS C 1.6 GHz COMMON BASE REFRACTORY/GOLD METALLIZATION EFFICIENCY = 50% MIN. ■ P o u t = 4.5 W MIN. WITH 1 0 dB GAIN PIN CONNIECTION 1 DESCRIPTION


    OCR Scan     		PDF SD1894 SD1894 .00p

    747s

    Abstract: ic 7475 AM1416-200
    Text: SG S-T H O M SO N Æj7 SfflDg[B ô lllLÊCT[B 8!10(gi A M 14 1 6 -2 0 0 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY


    OCR Scan     		PDF AM1416-200 AM1416-200 747s ic 7475

    ad 303 transistor

    Abstract: No abstract text available
    Text: rz7 S G S -T H O M S O N R [LiOT iQ £I ^ 7# BUV298AV NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV298AV SC04830 ad 303 transistor

    BUT30

    Abstract: No abstract text available
    Text: SGS-THOMSON BUT30V NPN TRANSISTOR POWER MODULE > HIGH CURRENT POWER BIPOLAR MODULE > VERY LOW Rih JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS • ISOLATED CASE 2500V RMS . EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE 4 INDUSTRIAL APPLICATIONS:


    OCR Scan     		PDF BUT30V SC04830 BUT30

    BUT23

    Abstract: No abstract text available
    Text: S G S - T H O M K l O K L i O S O N M K I B U T 2 3 2 V NPN TRANSISTOR POWER MODULE > HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE • SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF