Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4502 Silicon NPN epitaxial planar type For intermediate frequency amplification Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 (0.8) • High transition frequency fT • Large collector power dissipation PC
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2002/95/EC)
2SC4502
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC3315 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 • Optimum for high-density mounting • Allowing supply with the radial taping • Optimum for RF amplification of FM/AM radios
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2SC3315
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN06542 XN6542 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (Tr1) For medium-frequency amplification (Tr2) 5 6 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SC1215 + 2SD1360
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XN06542
XN6542)
2SC1215
2SD1360
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC3354 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 M Di ain sc te on na tin nc ue e/ d • Optimum for high-density mounting • Allowing supply with the radial taping
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2SC3354
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BTS 130
Abstract: bts 159 calculation of line diSTANCE relay REL 670 cq 724 g diode S78 SMD bts 2106 BTS 780 GP BTS 7710 G BTS780 GP 839 DIODE
Text: trilithic_cov.fm Seite 1 Dienstag, 30. November 1999 7:03 19 S p e c i a l S u b j e c t B o o k N o v. 1 9 9 9 T R I L I T H IC TM High Current Motor Driver M eet th e Second G en er ati o n h t t p : / / w w w. i n f i n e o n . c o m P ow e r S e m i c o nd u cto rs
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D-81541
B112-H6991-G2-X-7600
BTS 130
bts 159
calculation of line diSTANCE relay REL 670
cq 724 g diode
S78 SMD
bts 2106
BTS 780 GP
BTS 7710 G
BTS780
GP 839 DIODE
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2SC3932
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2
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2002/95/EC)
2SC3932
2SC3932
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC3315 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 4.0±0.2 • Features • Optimum for high-density mounting • Allowing supply with the radial taping • Optimum for RF amplification of FM/AM radios • High transition frequency fT
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2SC3315
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BFE 75A
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚ M Di ain
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2002/95/EC)
2SC3931
BFE 75A
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC1047 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Optimum for RF amplification of FM/AM radios • High transition frequency fT
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2SC1047
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2SC2636
Abstract: No abstract text available
Text: Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm 2.5±0.1 1.0 R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)
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2SC2636
2SC2636
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MOSFET TOSHIBA 2015
Abstract: No abstract text available
Text: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step
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2SK3476
100mA,
300mA,
500mA,
700mA,
900mA
MOSFET TOSHIBA 2015
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 5 6 3 2 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SC2404 + 2SB0709A (2SB709A) VCBO 30 V Collector-emitter voltage (Base open)
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XN04683
XN4683)
2SC2404
2SB0709A
2SB709A)
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XP04683 XP4683 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 • Features 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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XP04683
XP4683)
SC-88
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2SC4502
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4502 Silicon NPN epitaxial planar type For intermediate frequency amplification Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) M Di ain sc te on na tin nc ue e/ d 0.7 ue pl d in an c se ed lud
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2002/95/EC)
2SC4502
2SC4502
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2SC1360
Abstract: 2SC1360A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1360, 2SC1360A Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 4.9±0.2 M Di ain sc te on na tin nc ue e/ d 5.9±0.2 8.6±0.2 • Features
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2002/95/EC)
2SC1360,
2SC1360A
2SC1360
2SC1360A
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2SC4787
Abstract: No abstract text available
Text: Transistors 2SC4787 Silicon NPN epitaxial planar type For intermediate frequency amplification Unit: mm 6.9±0.1 4.0 M Di ain sc te on na tin nc ue e/ d (0.7) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2SC4787
2SC4787
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2sc2188
Abstract: No abstract text available
Text: Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 Emitter-base voltage Collector open Collector current Collector power dissipation Junction temperature Storage temperature 4.5±0.1
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2SC2188
2sc2188
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open)
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2SC4627
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5˚ d p
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2002/95/EC)
2SC3931
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10
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2002/95/EC)
2SC3932
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open)
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2SC4627
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10,7mhz
Abstract: 2SC2377
Text: Transistors 2SC2377 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 2.5±0.1 1.0 (1.0) (1.5) (1.5) R 0.9 2.4±0.2 1.0±0.1 • Absolute Maximum Ratings Ta = 25°C (0.85) Rating Unit VCBO 30 V Collector-emitter voltage (Base open)
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2SC2377
10,7mhz
2SC2377
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm 2.5±0.1 R 0.9 R 0.7 1.0 2.0±0.2 4.1±0.2 • Absolute Maximum Ratings Ta = 25°C 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es ht visi
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2SC2636
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2480 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06
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2002/95/EC)
2SC2480
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