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    ST DIODE MARKING CODE 724 Search Results

    ST DIODE MARKING CODE 724 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    ST DIODE MARKING CODE 724 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SEMTECH MARKING

    Abstract: 1SS315 DIODE A Schottky SOD-323
    Text: 1SS315 SILICON EPITAXIAL SCHOTTKY PLANAR DIODE . PINNING DESCRIPTION PIN APPLICATIONS ˙UHF Band Mixer Applications 1 Cathode 2 Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25OC Characteristics


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    PDF 1SS315 OD-323 OD-323 SEMTECH MARKING 1SS315 DIODE A Schottky SOD-323

    st marking code

    Abstract: 1SS315
    Text: 1SS315 SILICON EPITAXIAL SCHOTTKY PLANAR DIODE . PINNING DESCRIPTION PIN APPLICATIONS ˙UHF Band Mixer Applications 1 Cathode 2 Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25OC Characteristics


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    PDF 1SS315 OD-323 OD-323 st marking code 1SS315

    "MARKING CODE ST"

    Abstract: 1SS315
    Text: 1SS315 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • UHF Band Mixer PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value


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    PDF 1SS315 OD-323 OD-323 "MARKING CODE ST" 1SS315

    st c 323 a

    Abstract: 1SS315 st diode marking code 724
    Text: 1SS315 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • UHF Band Mixer PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value


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    PDF 1SS315 OD-323 OD-323 st c 323 a 1SS315 st diode marking code 724

    STL9N3LLH5

    Abstract: st diode marking code 724
    Text: STL9N3LLH5 N-channel 30 V, 0.015 Ω typ., 9 A STripFET V Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet — production data Features Order code VDSS RDS(on) max ID STL9N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb •


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    st diode marking code 724

    Abstract: STL-10 STL10N3LLH5
    Text: STL10N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT 3.3x3.3 STripFET™ V Power MOSFET Features Order code VDSS RDS on max ID STL10N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


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    PDF STL10N3LLH5 STL10N3LLH5 st diode marking code 724 STL-10

    FL014

    Abstract: FL014 Example AN-994 IRFL9014 IRFL4310
    Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier


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    PDF 0863A IRFL9014 OT-223 OT-223 IRFL014 FL014 FL014 FL014 Example AN-994 IRFL9014 IRFL4310

    Untitled

    Abstract: No abstract text available
    Text: STL50N3LLH5 N-channel 30 V, 0.015 Ω, 50 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS RDS on max ID STL50N3LLH5 30 V < 0.019 Ω 50 A (1) 1. The value is rated according Rthj-pcb 1 2 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


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    PDF STL50N3LLH5 STL50N3LLH5

    Untitled

    Abstract: No abstract text available
    Text: STL9N3LLH5 N-channel 30 V, 0.015 Ω typ., 9 A STripFET V Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet — production data Features Order code VDSS RDS(on) max ID STL9N3LLH5 30 V < 0.019 Ω 9 A (1) ) s ( ct 1. The value is rated according Rthj-pcb


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    FL014

    Abstract: IRFL214PBF IRF 100A 314P AN-994 EIA-541 IRFL014 PD-95318 International Rectifier TO-261AA
    Text: PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description


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    PDF PD-95318 IRFL214PbF OT-223 performanc72) EIA-481 EIA-541. EIA-418-1. FL014 IRFL214PBF IRF 100A 314P AN-994 EIA-541 IRFL014 PD-95318 International Rectifier TO-261AA

    95320

    Abstract: ST 95320 FL014 IRF 100A AN-994
    Text: PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A S Description Third Generation HEXFETs from International Rectifier


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    PDF IRFL9110PbF -100V OT-223 EIA-481 EIA-541. EIA-418-1. 95320 ST 95320 FL014 IRF 100A AN-994

    FL014

    Abstract: AN-994 irfl110pbf IRFL014 314P EIA-541 519 SOT-223
    Text: PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 100V RDS on = 0.54Ω G ID = 1.5A S Description


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    PDF IRFL110PbF OT-223 performa72) EIA-481 EIA-541. EIA-418-1. FL014 AN-994 irfl110pbf IRFL014 314P EIA-541 519 SOT-223

    IRFL9014PBF

    Abstract: FL014 IRF 100A AN-994 irf* p-channel sot-223 95153 TO-261AA DSS 1630
    Text: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A


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    PDF IRFL9014PbF OT-223 EIA-481 EIA-541. EIA-418-1. IRFL9014PBF FL014 IRF 100A AN-994 irf* p-channel sot-223 95153 TO-261AA DSS 1630

    MARKING 93 SOT-223

    Abstract: fl014 314P AN-994 EIA-541 IRFL014 sot-223 93 marking code 27a sot
    Text: PD - 95387 IRLL014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling Lead-Free D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A


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    PDF IRLL014PbF OT-223 EIA-481 EIA-541. EIA-418-1. MARKING 93 SOT-223 fl014 314P AN-994 EIA-541 IRFL014 sot-223 93 marking code 27a sot

    DC-12

    Abstract: IEC 60947-5-5 vde-0660 SELECTOR SWITCH
    Text: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information Series 44 Switches and Indicators 44 Contents 44 Description . 3 Product Assembly . 4


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    STS11N3LLH5

    Abstract: 001411A
    Text: STS11N3LLH5 N-channel 30 V, 0.012 Ω, 11 A, SO-8 STripFET V Power MOSFET Features Type VDSS RDS on max ID STS11N3LLH5 30 V < 0.014 Ω 11 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


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    PDF STS11N3LLH5 STS11N3LLH5 001411A

    Untitled

    Abstract: No abstract text available
    Text: STL9N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT 3.3x3.3 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL9N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


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    STS8DN3LLH5

    Abstract: 8dn3ll
    Text: STS8DN3LLH5 Dual N-channel 30 V, 0.0155 Ω, 10 A, SO-8 STripFET V Power MOSFET Features Type VDSS RDS on max ID STS8DN3LLH5 30 V < 0.019 Ω 10 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


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    STL51N3LLH5

    Abstract: No abstract text available
    Text: STL51N3LLH5 N-channel 30 V, 0.0105 Ω, 51 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Type VDSS RDS on max ID STL51N3LLH5 30 V < 0.0145 Ω 51 A (1) 1. The value is rated according Rthj-pcb 1 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


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    PDF STL51N3LLH5 STL51N3LLH5

    STL50N3LLH5

    Abstract: No abstract text available
    Text: STL50N3LLH5 N-channel 30 V, 0.015 Ω, 50 A, PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL50N3LLH5 30 V < 0.019 Ω 50 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


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    PDF STL50N3LLH5 STL50N3LLH5

    Untitled

    Abstract: No abstract text available
    Text: STS11N3LLH5 N-channel 30 V, 0.0117 Ω, 11 A, SO-8 STripFET V Power MOSFET Features Type VDSS STS11N3LLH5 30 V RDS on max ID 5 < 0.0132 Ω 11 A (1) 8 1. The value is rated according Rthj-pcb 4 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


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    PDF STS11N3LLH5 STS11N3LLH5

    Untitled

    Abstract: No abstract text available
    Text: PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A S Description Third Generation HEXFETs from International Rectifier


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    PDF IRFL9110PbF -100V OT-223 08-Mar-07

    VISHAY SOT 223 DATE CODE

    Abstract: VISHAY SOT LOT CODE
    Text: PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description


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    PDF PD-95318 IRFL214PbF OT-223 08-Mar-07 VISHAY SOT 223 DATE CODE VISHAY SOT LOT CODE

    FL014

    Abstract: marking code vishay soic 314P AN-994 EIA-541 IRFL014 International Rectifier TO-261AA
    Text: PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 100V RDS on = 0.54Ω G ID = 1.5A S Description


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    PDF IRFL110PbF OT-223 12-Mar-07 FL014 marking code vishay soic 314P AN-994 EIA-541 IRFL014 International Rectifier TO-261AA