STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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Untitled
Abstract: No abstract text available
Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27304
E78996
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Untitled
Abstract: No abstract text available
Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27304
E78996
12-Mar-07
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236PB
Abstract: No abstract text available
Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27304
E78996
100merchantability,
12-Mar-07
236PB
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IRK E78996 701819-303ac
Abstract: IRK E78996 p432 W08K K196
Text: I27096 rev. C 10/06 IRK. SERIES INT-A-pak ™ Power Modules STANDARD RECOVERY DIODES Features 165 A 195 A 230 A High voltage Electrically isolated base plate 3000 VRMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly
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I27096
E78996
IRK E78996 701819-303ac
IRK E78996 p432
W08K
K196
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IRK E78996 701819-303ac
Abstract: I27900
Text: Bulletin I27116 rev. C 03/02 SERIES IRK.166, .196, .236 STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features 165 A 195 A 230 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27116
E78996
IRK E78996 701819-303ac
I27900
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Untitled
Abstract: No abstract text available
Text: Bulletin I27116 rev. C 03/02 SERIES IRK.166, .196, .236 STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features 165 A 195 A 230 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27116
E78996
08-Mar-07
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IRK E78996 701819-303ac
Abstract: I27900 E78996 rectifier module 2 A GLASS PASSIVATED BRIDGE RECTIFIER E78996 bridge I27116
Text: Bulletin I27116 rev. C 03/02 SERIES IRK.166, .196, .236 STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features 165 A 195 A 230 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27116
E78996
12-Mar-07
IRK E78996 701819-303ac
I27900
E78996 rectifier module
2 A GLASS PASSIVATED BRIDGE RECTIFIER
E78996 bridge
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E78996 IR
Abstract: IR E78996 T.C 236 I27900
Text: Bulletin I27116 rev. B 03/00 SERIES IRK.166, .196, .236 NEW INT-A-pak Power Modules STANDARD RECOVERY DIODES 165 A 195 A 230 A Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27116
E78996
360AN
E78996 IR
IR E78996
T.C 236
I27900
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borg
Abstract: k-236
Text: I27116 rev. A 01/2000 SERIES IRK.166, .196, .236 NEW INT-A-pak Power Modules STANDARD RECOVERY DIODES 165 A 195 A 230 A Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability
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I27116
E78996
borg
k-236
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MO-236AA
Abstract: JESD97 014E1
Text: ESDALC6V1M3 Dual low capacitance Transil array for ESD protection Features • 2 unidirectional, low capacitance Transil diodes ■ Better than IEC 61000-4-2 standard ESD protection: 11 kV contact discharge ■ Breakdown Voltage VBR = 6.1 V min ■ Low diode capacitance (11 pF typ at 0 V)
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OT883
MO-236AA
IEC61000-4-2
JESD97
014E1
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Untitled
Abstract: No abstract text available
Text: ESDALC6V1M3 Dual low capacitance Transil array for ESD protection Features • 2 unidirectional, low capacitance Transil diodes ■ Better than IEC 61000-4-2 standard ESD protection: 11 kV contact discharge ■ Breakdown voltage VBR = 6.1 V min ■ Low diode capacitance (11 pF typ at 0 V)
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OT883
MO-236AA)
IEC61000-4-2
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MO-236AA
Abstract: No abstract text available
Text: ESDALC6V1M3 Dual low capacitance Transil array for ESD protection Features • 2 unidirectional, low capacitance Transil diodes ■ Better than IEC 61000-4-2 standard ESD protection: 11 kV contact discharge ■ Breakdown voltage VBR = 6.1 V min ■ Low diode capacitance (11 pF typ at 0 V)
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OT883
MO-236AA)
IEC61000-4-2
MO-236AA
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M6411
Abstract: No abstract text available
Text: ESDALC6V1M6, ESDALC6V1-5M6 4- and 5-line low capacitance Transil arrays for ESD protection Features • High ESD protection level ■ High integration ■ Suitable for high density boards ■ 4 unidirectional Transil diodes ESDALC6V1M6 ■ 5 unidirectional Transil diodes
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Untitled
Abstract: No abstract text available
Text: ESDALC6V1M6, ESDALC6V1-5M6 4- and 5-line low capacitance Transil arrays for ESD protection Features • High ESD protection level ■ High integration ■ Suitable for high density boards ■ 4 unidirectional Transil diodes ESDALC6V1M6 ■ 5 unidirectional Transil diodes
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61000-4-y
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JESD97
Abstract: qfn 44 PACKAGE footprint
Text: ESDALC6V1M6, ESDALC6V1-5M6 4- and 5-line low capacitance Transil arrays for ESD protection Features • High ESD protection level ■ High integration ■ Suitable for high density boards ■ 4 unidirectional Transil diodes ESDALC6V1M6 ■ 5 unidirectional Transil diodes
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STGB3NC120HD
Abstract: STGF3NC120HD 11089 STGP3NC120HD GF3NC120HD Gb3NC120HD STGB3NC120HDT4 stgb3nc120 IGBT GF3NC120HD
Text: STGB3NC120HD STGF3NC120HD, STGP3NC120HD 7 A, 1200 V very fast IGBT with ultrafast diode Features TAB • High voltage capability ■ High speed ■ Very soft ultrafast recovery anti-parallel diode 3 1 Applications ■ Home appliance ■ Lighting 1 2 TO-220FP
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STGB3NC120HD
STGF3NC120HD,
STGP3NC120HD
O-220FP
O-220
STGB3NC120HDT4
GB3NC120HD
STGB3NC120HD
STGF3NC120HD
11089
STGP3NC120HD
GF3NC120HD
Gb3NC120HD
STGB3NC120HDT4
stgb3nc120
IGBT GF3NC120HD
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UL1385
Abstract: diode h2z thermal d242 IRK 160 D233 D234 D235 D236 D237 D238
Text: • MäSSMSa 0Glb70fl D7fl IINR SERIES IRK.165, .166, .195, .196, .235, .236 bitemational S Rectifier DIODES NEW INT-A-pak Power Modules INTERNATIONAL b5E D rectifier Features ■ I I I I I I I I High voltage Electrically isolated base plate 3000 V RMS isolating voltage
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001b7Qfl
UL1385
diode h2z
thermal d242
IRK 160
D233
D234
D235
D236
D237
D238
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ka2 s9
Abstract: thermal d242
Text: International SRecBfier IPkr 1R. seR'es IRK;j% ;1 26365; DIODES NEW INT-A-pak Power Modules 165A 195A 230A Features • H igh v o lta g e ■ E le c tric a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS iso lating v o lta g e ■ ■ ■ ■ ■ ■
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Untitled
Abstract: No abstract text available
Text: SGSTHOMSON BAT 49 SMALL SIGNAL SCHOTTKY DIODE D E S C R IP T IO N General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex cessive voltage such as electrostatic discharges.
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a7p marking
Abstract: No abstract text available
Text: • ^53*131 QQE43b7 OSE « A P X N AMER PHILIPS/DISCRETE BAV99 L7E D ; v SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV99 consists of two diodes in a microminiature plastic envelope. The diodes are connected in series and the unit is intended for high-speed switching in thick and thin-film circuits.
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QQE43b7
BAV99
BAV99
BAW62.
a7p marking
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Untitled
Abstract: No abstract text available
Text: Te m ic BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features • W ide freq u en cy range 10 M H z to 1 G H z Applications Current co n tr o lled H F resistan ce in adjustable attenuators Absolute Maximum Ratings Tj = 2 5 ° C T e st C o n d itio n s
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BA779
BA779S
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DIODE s4 66A
Abstract: ifr 044 TCS4C 66A 241 252AA 6VQ09CT 6VQ09CTF 6VQ10CT 6VQ10CTF DIODE S4 3a
Text: SCHOTTKY BARRIER DIODE 2.38M AX .094 FEATU RES • TO-251AA 6VQ09CT 6VQ10CT 6VQ09CTF 6VQ10CTF 6.6A/90~100V 2.38M AX (.094) Case 7 7 » TO-252AA Case, Surface Mount Device 6.221245) 5.98(.235) i_ 0 Dual Diodes - Cathode Common 1.5 M A X "1.059) 0 Low Forward Voltage Drop
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6VQ09CT
6VQ10CT
6VQ09CTF
6VQ10CTF
O-251AA
O-252AA
252AA
38MAX
58MAX
DIODE s4 66A
ifr 044
TCS4C
66A 241
6VQ10CTF
DIODE S4 3a
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se 336
Abstract: VOLTAGE REGULATOR IC LM SERIES ic lm 35 lm 586 Lm voltage regulator lm 35 Z
Text: f Z 7 ^ 7# S G S - T H O M S O N L M 2 3 6 ,A L M 3 3 6 ,B 2.5 V VOLTAGE REFERENCES • LOW TEM PERATURE COEFFICIENT ■ W IDE OPERATING CURRENT OF 400 \iA TO 10 mA ■ 0.2 n DYNAMIC IMPEDANCE ■ G UARANTEED TEM PERATURE STABILITY ■ FAST TURN-ON D E S C R IP T IO N
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LM236
LM336
E38LM236-01
E88LM236-02
70nur\.
se 336
VOLTAGE REGULATOR IC LM SERIES
ic lm 35
lm 586
Lm voltage regulator
lm 35 Z
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