2N1893
Abstract: No abstract text available
Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N1893 Features • • • • 120 Volts 0.5 Amps Meets MIL-S-19500/182 Collector-Base Voltage 120 Collector Current: 0.5 mA Fast Switching 30 nS NPN BIPOLAR TRANSISTOR Maximum Ratings
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2N1893
MIL-S-19500/182
MSC0271A
20Vdc,
500mAdc)
2N1893
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2SD882U-P
Abstract: No abstract text available
Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 120
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2SD882U-P
O-126
2SD882U-P
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2SD882U-P
Abstract: No abstract text available
Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V
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2SD882U-P
O-126
t10ms)
200mA
500mA,
250mA,
2SD882U-P
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2SD882U-P
Abstract: No abstract text available
Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V
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Original
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2SD882U-P
O-126
t10ms)
200mA
500mA,
250mA,
2SD882U-P
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PDF
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2SD882U-P
Abstract: No abstract text available
Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V
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2SD882U-P
O-126
t10ms)
200mA
500mA,
250mA,
2SD882U-P
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ic 4000
Abstract: 2SD882U-P 2SD882U
Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V
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Original
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2SD882U-P
O-126
t10ms)
200mA
500mA,
250mA,
ic 4000
2SD882U-P
2SD882U
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2SD797Y
Abstract: 2SD1041 str5 1561-1008 pt2909 1561-1010 IR802
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (HZ) (A) (s) Max (Ohms) 80 80 80 80 80 80 80 80 80 80 175 175 175 175 175 175 175 175 175 200 80 200 V (BR)CEO PD (CE)sat Toper Max (°C)
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108T2
BLX55
SDT8302
SDT8304
SML44302
SML44307
2SD797Y
2SD1041
str5
1561-1008
pt2909
1561-1010
IR802
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2u 62 diode
Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20
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SDT3208
SDT7140
BDT95
BDT96
2u 62 diode
KT808A
diode 2U 81
kt808am
2N3076
2SD867Y
kt808
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Untitled
Abstract: No abstract text available
Text: 2STA1694 High power PNP epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO =-120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft =20MHz ■ Fully characterized at 125 oC 3 2 Applications ■
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2STA1694
2STC4467
20MHz
2STA1694
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ST16N10
Abstract: 16N10 n channel enhancement MOSFET n channel Stanson Technology MOSFET MARKING ST st 16n10 DSA001077 mosfet low idss TO-251 Package
Text: ST 16N10 ST16N10 N Channel Enhancement Mode MOSFET 16.0A DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using
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ST16N10
ST16N10
O-252
O-251
O-252
O-251
16N10
n channel enhancement MOSFET
n channel
Stanson Technology
MOSFET MARKING ST
st 16n10
DSA001077
mosfet low idss
TO-251 Package
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2STA1694
Abstract: 2STC4467
Text: 2STA1694 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 1 Applications ■ TO-3P Audio power amplifier
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2STA1694
2STC4467
2STA1694
2STC4467
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2STA1694
Abstract: 2STC4467 JESD97
Text: 2STA1694 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 Applications ■ 1 TO-3P Audio power amplifier
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Original
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2STA1694
2STC4467
2STA1694
2STC4467
JESD97
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2STA1694
Abstract: 2STC4467
Text: 2STC4467 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 1 Applications ■ TO-3P Audio power amplifier
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Original
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2STC4467
2STA1694
2STA1694
2STC4467
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2STA1694
Abstract: 2STC4467 JESD97
Text: 2STC4467 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 Applications ■ 1 TO-3P Audio power amplifier
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2STC4467
2STA1694
2STA1694
2STC4467
JESD97
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ESM2040DV
Abstract: ESM2 ESM2040D ke92 PTC6072 KE924503 m*11014 2SD644 SD6062 esm749a
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD Max (W) hFE Min »T Max (Hz) ICBO Max (A) tr Max (8) r (CE)ut Max (Ohms) T Op«r Package Style Max (°C) Darlington Transistors, NPN (Cont'd) 5 10 15 20 25 30 35 40 45 50
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D66ES7
2SC3054
D64DS7
D64DS7T
D64ES7T
GE10009
ETG36-040C
ETG36-040D
PTC6072
PTC6063
ESM2040DV
ESM2
ESM2040D
ke92
KE924503
m*11014
2SD644
SD6062
esm749a
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Untitled
Abstract: No abstract text available
Text: 2STC4467 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC s ct u d o 3 Applications ■
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2STC4467
2STA1694
2STC446and
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PDF
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Untitled
Abstract: No abstract text available
Text: 2STA1694 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC s ct u d o 3 Applications ■
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2STA1694
2STC4467
2STA16and
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SOT23-6L
Abstract: SOT-23-6L CA SOT 25 marking 6l STN6561 ST2300 IDM-10 N -Channel power Sot 6
Text: N6561 ST STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices
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STN6561
STN6561
OT-23-6L
lSTN6561
ST2300
SOT23-6L
SOT-23-6L
CA SOT 25
marking 6l
IDM-10
N -Channel power Sot 6
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JESD97
Abstract: M252 SD56120M
Text: SD56120M RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■
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SD56120M
860MHz
SD56120M
JESD97
M252
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Untitled
Abstract: No abstract text available
Text: SD56120M RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■
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SD56120M
860MHz
SD56120M
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 5006 | Thick Film Hybrid 1C STK390-120 1-Channel + Supply Switching Convergence Correction Circuit lc max = 4A Overview Package Dimensions The ST K 390-120 is a high-accuracy convergence correction circuit hybrid IC designed to complement the
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STK390-120
A03345
2200pF
120pF)
A03346
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BFQ28
Abstract: Q62702-F527 CJCO D 843 Transistor
Text: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods
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fl23Sfc
Q62702-F527
BFQ28
Q62702-F527
CJCO
D 843 Transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: TEXAS INSTR -COPTO} bâ 8961726 TEXAS IN ST R DE | f l T b l ? a b 0037Dbl 62C 3 7 0 6 1 OPTO 4 D TIPL762, TIPL762A N-P-N SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 7"-33 - / 3 120 W at 25°C Free-Air Temperature 6 A Continuous Collector Current
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OCR Scan
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0037Dbl
TIPL762,
TIPL762A
TIPL762
TIPL762A
CI0370t
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PDF
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2SD1763
Abstract: 2Sb1186 2SD1763 transistor
Text: 7-, £ / T ransistors h -7 > v 2SD1763 m X t° $ * V 7 U NPN y >J□ > N7 > y 7 $ Epitaxial Planar NPN Silicon Transistor flU§>JfcS^^1iffl/LowFreq. Power Amp. 2SD1763 • • w* 1 rfjiE l/D im e n s io n s U n it: mm) ¡IitH T St>-S o B V ce o= 120 V <M i tO. I
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2SD1763
2SB1186
O-220FP
SC-67
Para60
2SD1763
2SD1763 transistor
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