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    SST3 GATE Search Results

    SST3 GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SST3 GATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rku SOT-23

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET Datasheet RK7002BM Structure Silicon N-channel MOSFET Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKU Application Switching


    Original     		PDF RK7002BM OT-23> R1102A rku SOT-23

    RK7002BM

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET Datasheet RK7002BM Structure Silicon N-channel MOSFET Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKT Application Switching


    Original     		PDF RK7002BM OT-23> R1102A RK7002BM

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch MOSFET RUC002N05  Structure Silicon N-channel MOSFET  Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH  Application Switching


    Original     		PDF RUC002N05 OT-23> R1010A

    RUC002N05

    Abstract: T116
    Text: 1.2V Drive Nch MOSFET RUC002N05  Structure Silicon N-channel MOSFET  Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH  Application Switching


    Original     		PDF RUC002N05 OT-23> R1010A RUC002N05 T116

    diode t316

    Abstract: No abstract text available
    Text: Product specification RYC002N05 0.9V Drive Nch MOSFET  Structure Silicon N-channel MOSFET  Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3)Ultra low voltage drive(0.9V drive). Abbreviated symbol : QJ


    Original     		PDF RYC002N05 OT-23> 100mA, 200mA, diode t316

    RK7002B

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET RK7002B  Dimensions Unit : mm  Structure Silicon N-channel MOSFET SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKT  Application Switching  Inner circuit


    Original     		PDF RK7002B OT-23> R1010A RK7002B

    RYC002N05

    Abstract: No abstract text available
    Text: Data Sheet 0.9V Drive Nch MOSFET RYC002N05  Structure Silicon N-channel MOSFET  Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3)Ultra low voltage drive(0.9V drive). Abbreviated symbol : QJ  Application


    Original     		PDF RYC002N05 OT-23> RYC002N05 Pw10s, R1120A

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch MOSFET RUC002N05  Structure Silicon N-channel MOSFET  Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH  Application Switching


    Original     		PDF RUC002N05 OT-23> R1010A

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET RK7002B  Structure Silicon N-channel MOSFET  Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKT  Application Switching  Packaging specifications


    Original     		PDF RK7002B OT-23> R1010A

    rk7002b

    Abstract: SST3 GATE T116
    Text: 2.5V Drive Nch MOSFET RK7002B  Structure Silicon N-channel MOSFET  Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKT  Application Switching  Packaging specifications


    Original     		PDF RK7002B OT-23> R1010A rk7002b SST3 GATE T116

    rkm sot-23

    Abstract: rkm 21 rkm transistor RK7002 RKM 15 RK7002 equivalent 575mA2 RKM SOT
    Text: RK7002 Transistors Interface and switching 60V, 115mA RK7002 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(5V). ROHM : SST3 E I A J : SOT-23 Abbreviated symbol : RKM


    Original     		PDF RK7002 115mA) OT-23 rkm sot-23 rkm 21 rkm transistor RK7002 RKM 15 RK7002 equivalent 575mA2 RKM SOT

    RSC002P03

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Pch MOSFET RSC002P03  Structure Silicon P-channel MOSFET  Dimensions Unit : mm SST3 <SOT-23> Features 1) Low on-resistance. 2) Low-voltage drive (4V). Abbreviated symbol : WP  Application Switching  Packaging specifications


    Original     		PDF RSC002P03 OT-23> RSC002P03 Pw10s, R1120A

    rkm sot-23

    Abstract: rkm 21 RKM SOT rkm transistor rkm 05 RK7002 equivalent rkm rk7002 RK7002 rkm sot23
    Text: RK7002 Transistors Interface and switching 60V, 115mA RK7002 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(4V). ROHM : SST3 E I A J : SOT-23 Abbreviated symbol : RKM


    Original     		PDF RK7002 115mA) OT-23 rkm sot-23 rkm 21 RKM SOT rkm transistor rkm 05 RK7002 equivalent rkm rk7002 RK7002 rkm sot23

    SST34HF1621

    Abstract: SST34HF1641
    Text: 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 SST3 4HF16 21/ 164 116 Mb CSF x1 6 + 2Mb / 4Mb SRAM (x8/x16 ) MCP Co mboMe morie s Data Sheet FEATURES: • Block-Erase Capability – Uniform 32 KWord blocks • Read Access Time


    Original     		PDF SST34HF1621 SST34HF1641 4HF16 x8/x16 56-lfbga-L1P-8x10-450mic-3 MO-210, SST34HF1641

    TRANSISTOR SMD MARKING CODE DK

    Abstract: 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd transistor marking DK smd TRANSISTOR code marking pb sot23 transistor marking 44 sot23 339 marking code SMD transistor DK smd code sot23 TRANSISTOR SMD CODE 339 TRANSISTOR SMD MARKING CODE SP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA143ZT PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 12 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143ZT


    Original     		PDF M3D088 PDTA143ZT PDTC143ZT. 01-May-99) TRANSISTOR SMD MARKING CODE DK 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd transistor marking DK smd TRANSISTOR code marking pb sot23 transistor marking 44 sot23 339 marking code SMD transistor DK smd code sot23 TRANSISTOR SMD CODE 339 TRANSISTOR SMD MARKING CODE SP

    RK7002A

    Abstract: T116
    Text: RK7002A Transistors Switching 60V, 300mA RK7002A (2) ∗Gate Protection Diode. (1) ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are


    Original     		PDF RK7002A 300mA) RK7002A T116

    ST 9340

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23


    Original     		PDF M3D088 PSSI3120CA PSSI3120CA MGC421 di20CA 13-Feb-03) ST 9340

    SOT-457

    Abstract: SST3 GATE 1 base 2 emitter 3 collector SC-72 SC-75A TUMT3
    Text: Transistors Package Dimensions Unit : mm Surface mount type transistors are available in a wide variety of circuit formats and packages, like ultraminiature type, 2-circuit built-in type and power type. VMT3 (1) Base(IN)(Gate) (2) Emitter(GND)(Source) (3) Collector(OUT)(Drain)


    Original     		PDF SC-75A) OT-416> SC-70) OT-323> SC-88A) OT-353> SC-88) OT-363> SOT-457 SST3 GATE 1 base 2 emitter 3 collector SC-72 SC-75A TUMT3

    AM FM TUNER module

    Abstract: AM FM TUNER module car AN97023 FM stereo receiver 19Khz 57Khz philips audio amplifier ic guide CAPACITOR 33PF stereo to 2.1 converter circuit diagram TEA6840 TEA6880H 4 channel car audio amplifier circuit diagram
    Text: APPLICATION NOTE TEA6880H, Car Radio Audio Signal Processor front end part AN97023 Philips Semiconductors TEA6880H, Car Radio Audio Signal Processor (front end part) Application Note AN97023 Abstract The Car radio Audio Signal Processor TEA6880H (CASP) is a monolithic bipolar Integrated Circuit (IC) providing


    Original     		PDF TEA6880H, AN97023 TEA6880H AN96085 75kHz) 100Hz AM FM TUNER module AM FM TUNER module car AN97023 FM stereo receiver 19Khz 57Khz philips audio amplifier ic guide CAPACITOR 33PF stereo to 2.1 converter circuit diagram TEA6840 TEA6880H 4 channel car audio amplifier circuit diagram

    RK7002A

    Abstract: T116
    Text: RK7002A Transistors Switching 60V, 300mA RK7002A (2) ∗Gate Protection Diode. (1) ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are


    Original     		PDF RK7002A 300mA) RK7002A T116

    RK7002A

    Abstract: T116 SST3 GATE
    Text: RK7002A Transistors 4V Drive Nch MOS FET RK7002A zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET transistor 2.9 0.4 zFeatures 1) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4V). 5) Drive circuits can be simple.


    Original     		PDF RK7002A RK7002A T116 SST3 GATE

    rkm 21 transistor

    Abstract: RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT
    Text: IN- Transistors n MOS FET 1. Can be used with automatic placement machine. AvarIable In a wade variety o f p a c k a g e s . L i k e b i p o l a r transrstors, taprng versron placement system. IS a l s o available for lines using the automatic 2. MOS FETs operating from 4 volts


    Original     		PDF 2SK2792 2SK2503 RK7002 rkm 21 transistor RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT

    rkm sot-23

    Abstract: rkm transistor RKM SOT RK7002 RK7002 equivalent rkm 15 transistor
    Text: Transistors Interfaces and switching 60V, 115mA RK7002 •Features 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. •External dimensions {Units: mm) 2.9±0.2 0.95 ±8:f


    OCR Scan     		PDF 115mA) RK7002 OT-23 rkm sot-23 rkm transistor RKM SOT RK7002 RK7002 equivalent rkm 15 transistor

    16X24

    Abstract: No abstract text available
    Text: QL16x24B/QL16x24BH WildCat 4000 Very-High-Speed 4K 12K Gate CMOS FPGA Rev B pASIC HIGHLIGHTS B Very High Speed - V iaL ink metal-to-metal program m able-via anti­ fuse technology, allows counter speeds over 150 MHz and logic cell delays of under 2 ns.


    OCR Scan     		PDF QL16x24B/QL16x24BH 16-by-24 84pin 100-pin 144-pin 160pin 16-bit QL16x24BH 16X24