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    tjm sot23

    Abstract: No abstract text available
    Text: SSS2304 N-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 55 @VGS = 4.5V G 80 @VGS = 2.5V 3.2A 20V S 120 @VGS = 1.8V D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


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    SSS2304 OT-23 OT-23 tjm sot23 PDF