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    SSS10N60A

    Abstract: SSS1GN60A
    Text: SSS10N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA Max. @ V^. = 600V


    OCR Scan     		PDF SSS10N60A T0-220F and11. SSS1GN60A SSS10N60A SSS1GN60A