SSMIni
Abstract: SS-Mini SSMini 5
Text: Protection from Surge SSMini-5pin T.V.S. Diode TV068E20W060 Overview Unit : mm Newly developed T.V.S. (Transient Voltage Suppressor) Diode with SSMini-5pin package against lightning/ESD. 1.60 ±0.05 0.6 +0.05 -0.03 1.00 ±0.05 5° 1.60 ±0.05 1.20 ±0.05
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TV068E20W060)
1IEC61000-4-5
M00633AE
TV068E20W060
IEC61000-4-5
SSMIni
SS-Mini
SSMini 5
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Untitled
Abstract: No abstract text available
Text: Composite Transistors UP04112 Silicon PNP epitaxial planar type For digital circuits 5 4 1.20±0.05 Two elements incorporated into one package Transistors with built-in resistor SSMini type package, reduction of the mounting area and assembly cost
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UP04112
UNR2112
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Untitled
Abstract: No abstract text available
Text: Composite Transistors UP04212 Silicon NPN epitaxial planar type For digital circuits 5 4 1.20±0.05 Two elements incorporated into one package Transistors with built-in resistor SSMini type package, reduction of the mounting area and assembly cost
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UP04212
UNR2212
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Untitled
Abstract: No abstract text available
Text: Composite Transistors UP0187BG Silicon N-channel MOSFET For switching circuits • Package High-speed switching Incorporating a built-in gate protection-diode Two elements incorporated into one package SSMini type package, reduction of the mounting area and assembly cost
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UP0187BG
2SK3938
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04212 Silicon NPN epitaxial planar type For digital circuits 5 4 1.20±0.05 Two elements incorporated into one package (Transistors with built-in resistor) SSMini type package, reduction of the mounting area and assembly cost
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2002/95/EC)
UP04212
UNR2212
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04212 Silicon NPN epitaxial planar type For digital circuits 5 4 1.20±0.05 Two elements incorporated into one package (Transistors with built-in resistor) SSMini type package, reduction of the mounting area and assembly cost
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2002/95/EC)
UP04212
UNR2212
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UP0187BG
Abstract: No abstract text available
Text: Composite Transistors UP0187BG Silicon N-channel MOSFET For switching circuits • Features Package High-speed switching Incorporating a built-in gate protection-diode Two elements incorporated into one package SSMini type package, reduction of the mounting area and assembly cost
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UP0187BG
2SK3938
UP0187BG
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UP04112
Abstract: UNR2112
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04112 Silicon PNP epitaxial planar type For digital circuits 5 4 1.20±0.05 Two elements incorporated into one package (Transistors with built-in resistor) SSMini type package, reduction of the mounting area and assembly cost
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2002/95/EC)
UP04112
UNR2112
UP04112
UNR2112
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04112G Silicon PNP epitaxial planar type For digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor) SSMini type package, reduction of the mounting area and assembly cost
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2002/95/EC)
UP04112G
UNR2112
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04112 Silicon PNP epitaxial planar type For digital circuits 5 4 1.20±0.05 Two elements incorporated into one package (Transistors with built-in resistor) SSMini type package, reduction of the mounting area and assembly cost
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2002/95/EC)
UP04112
UNR2112
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Part No. AN34070A Package Code No. SSMINI-5DA Publication date: June 2008 SDB00163AEB 1 AN34070A Contents Overview ………………………………………………….…………………………………………………………. 3
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AN34070A
SDB00163AEB
AN34070A
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up04212
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04212G Silicon NPN epitaxial planar type For digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor) SSMini type package, reduction of the mounting area and assembly cost
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2002/95/EC)
UP04212G
UNR2212
up04212
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PEMD4
Abstract: BC847B PEMD13 pemd9 PEMD6 PEMB4 PEMD12 PEMH11 PBSS3515VS BZA820A
Text: New DIMENSIONS AND RECOMMENDED SOLDER LANDS FOR REFLOW SOLDERING SOT66x packages: dimensions in mm • SOT666: 6 leads • SOT665: 5 leads • SOT663: 3 leads SOT663 Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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OT66x
OT666:
OT665:
OT663:
OT663
OT665
OT66x
PEMD4
BC847B
PEMD13
pemd9
PEMD6
PEMB4
PEMD12
PEMH11
PBSS3515VS
BZA820A
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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Untitled
Abstract: No abstract text available
Text: New Achieving lower electrical power for smaller mobile phones 200mA Class Low VF Schottky barrier diode MA2SD31 Overview Unit: mm 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.60±0.05 1.20+0.05 –0.03 0.01±0.01 5˚ 0.60 (0.60) 0.80±0.05
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200mA
MA2SD31
MA2SD31
200mA)
rectificati00
M00610AE
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Untitled
Abstract: No abstract text available
Text: New Achieving lower electrical power for smaller mobile phones 200mA Class Low IR Schottky barrier diode MA2SD32 Overview Unit: mm 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.60±0.05 1.20+0.05 –0.03 0.01±0.01 5˚ 0.60 (0.60) 0.80±0.05
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200mA
MA2SD32
MA2SD32
200mA)
M00609AE
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2SD2620J
Abstract: VEBO-15V
Text: Transistors 2SD2620J Silicon NPN epitaxial planer type For low-frequency amplification 1.60+0.05 –0.03 1.00±0.05 • Features 0.12+0.03 –0.01 5° Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage
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2SD2620J
2SD2620J
VEBO-15V
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S-Mini
Abstract: SSMini s-mini 2-pin package
Text: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes
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MA2Q705)
S-Mini
SSMini
s-mini 2-pin package
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SSMIni
Abstract: MA2S367 SS-Mini
Text: Variable Capacitance Diodes MA2S367 Silicon epitaxial planar type Unit : mm For AFC of UHF and VHF electronic tuner 0.15 min. + 0.05 0.27 − 0.02 0.15 min. + 0.05 0.27 − 0.02 • Large capacitance ratio • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and
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MA2S367
SSMIni
MA2S367
SS-Mini
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UN412Y
Abstract: UN421D UN421E UN421L UN511D UN511E UN511F UN511L UN511M UN521D
Text: - 338 - m % UN412Y tt töT _ ffl « Digital Wik&fä Ta=25T;, *EP(äTc=25T; VcBO Vc e o iC(DC) (V) (V) (A) -50 _ Pc* (W) (W) m ICBO (max) <WA) VcB (V) m (min) hp m & 14 (max) Vc e (V) (Ta=25'C) Ic /I e (A) OTOtyp (max) (V) -50 -0. 5 0.3 -1 -50 50 -10 -0.1
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UN412Y
UN421D
UN421E
UM21F
UN421L
UN512)
UN612X
UN612Y
47K/10K
UN621D
UN511D
UN511E
UN511F
UN511L
UN511M
UN521D
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YTS2222A
Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
Text: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60
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UN8231A
UN9110
UN9111
UN9113
UN9114
003ax
SC-59)
YTS2222A
YTS2221
SC-59
YTS2222A
YTS3904
YTS3905
YTS2222
YTS3903
UN9217
YTS4125
YTS2221
YTS2221A
YTS2907
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SSMini
Abstract: No abstract text available
Text: Panasonic S w itc h in g Diodes MA137 Silicon epitaxial planer type Unit : mm For high-speed switching circuits 0.80 0 .8 0 ± 0.05 I Features Small SS-Mini type package with two incorporated elements, en abling high-density mounting Series connection in package
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MA137
100mA
100pA
100MHz
N-50BU
SSMini
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SS-Mini 3
Abstract: No abstract text available
Text: Panasonic Z e n e r D io d e s MAZS0470G Silicon p la n er type Constant voltage, constant current, waveform cripper and surge absorption circuit • Features • SS-Mini type package 2-pin • Vz= 4.45 to 4.83V Absolute Maximum Ratings (Ta=25°C) Parameter
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MAZS0470G
C7031
SS-Mini 3
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